# FDS3672

**onsemi** · MOSFETs · SO-8

FDS3672 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3 in the package diagram. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3 in the package diagram. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2 in the package diagram. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum rating is ±20 V. |
| 5 | D | passive | Drain of the MOSFET, tied with pins 6, 7 and 8; VDSS is 100 V. |
| 6 | D | passive | Drain of the MOSFET, tied with pins 5, 7 and 8; VDSS is 100 V. |
| 7 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 8; VDSS is 100 V. |
| 8 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 7; VDSS is 100 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS |  |  | 100 | V |  | 2 |
| Gate to Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Drain Current, Continuous | ID |  |  | 7.5 | A | TA = 25oC, VGS = 10V, RθJA = 50oC/W | 2 |
| Drain Current, Continuous | ID |  |  | 4.8 | A | TA = 100oC, VGS = 10V, RθJA = 50oC/W | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 416 | mJ | Note 1 | 2 |
| Power Dissipation | PD |  |  | 2.5 | W |  | 2 |
| Operating and Storage Temperature | TJ, TSTG | -55 |  | 150 | oC |  | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 50 | oC/W | at 10 seconds (Note 3) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 85 | oC/W | at 1000 seconds (Note 3) | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 25 | oC/W | Note 2 | 2 |
| Drain to Source Breakdown Voltage | BVDSS | 100 |  |  | V | ID = 250µA, VGS = 0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 80V, VGS = 0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | µA | VDS = 80V, VGS = 0V, TC = 150oC | 3 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±20V | 3 |
| Gate to Source Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VGS = VDS, ID = 250µA | 3 |
| Drain to Source On Resistance | rDS(ON) |  | 0.019 | 0.023 | Ω | ID = 7.5A, VGS = 10V | 3 |
| Drain to Source On Resistance | rDS(ON) |  | 0.023 | 0.028 | Ω | ID = 6.8A, VGS = 6V | 3 |
| Drain to Source On Resistance | rDS(ON) |  | 0.035 | 0.043 | Ω | ID = 7.5A, VGS = 10V, TC = 150oC | 3 |
| Total Gate Charge at 10V | Qg(TOT) |  | 28 | 37 | nC | VGS = 0V to 10V, VDD = 50V, ID = 7.5A, Ig = 1.0mA | 3 |
| Threshold Gate Charge | Qg(TH) |  | 4 | 6 | nC | VGS = 0V to 2V | 3 |
| Turn-On Time | tON |  |  | 51 | ns | VDD = 50V, ID = 4A, VGS = 10V, RGS = 10Ω | 3 |
| Turn-Off Time | tOFF |  |  | 96 | ns | VDD = 50V, ID = 4A, VGS = 10V, RGS = 10Ω | 3 |
| Source to Drain Diode Voltage | VSD |  |  | 1.25 | V | ISD = 7.5A | 3 |
| Source to Drain Diode Voltage | VSD |  |  | 1 | V | ISD = 4A | 3 |
| Reverse Recovery Time | trr |  |  | 55 | ns | ISD = 7.5A, dISD/dt = 100A/µs | 3 |
| Reverse Recovered Charge | QRR |  |  | 90 | nC | ISD = 7.5A, dISD/dt = 100A/µs | 3 |
| Input Capacitance | CISS |  | 2015 |  | pF | VDS = 25V, VGS = 0V, f = 1MHz | 3 |
| Output Capacitance | COSS |  | 285 |  | pF | VDS = 25V, VGS = 0V, f = 1MHz | 3 |
| Reverse Transfer Capacitance | CRSS |  | 70 |  | pF | VDS = 25V, VGS = 0V, f = 1MHz | 3 |
| Gate to Source Gate Charge | Qgs |  | 10 |  | nC | VDD = 50V, ID = 7.5A, Ig = 1.0mA | 3 |
| Gate Charge Threshold to Plateau | Qgs2 |  | 6.8 |  | nC | VDD = 50V, ID = 7.5A, Ig = 1.0mA | 3 |
| Gate to Drain Miller Charge | Qgd |  | 6 |  | nC | VDD = 50V, ID = 7.5A, Ig = 1.0mA | 3 |
| Turn-On Delay Time | td(ON) |  | 14 |  | ns | VDD = 50V, ID = 4A, VGS = 10V, RGS = 10Ω | 3 |
| Rise Time | tr |  | 20 |  | ns | VDD = 50V, ID = 4A, VGS = 10V, RGS = 10Ω | 3 |
| Turn-Off Delay Time | td(OFF) |  | 37 |  | ns | VDD = 50V, ID = 4A, VGS = 10V, RGS = 10Ω | 3 |
| Fall Time | tf |  | 27 |  | ns | VDD = 50V, ID = 4A, VGS = 10V, RGS = 10Ω | 3 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board | 3 |

## CAD (KiCad official)

- Symbol: `FDS3672`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `fds3672-etched.step` / `fds3672-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds3672.step` / `fds3672.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588942998080540672) (9 pp, sha256 `01a4e61bbfa21aa8`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds3672-datasheet.pdf)