# FDS3512

**onsemi** · MOSFETs · SOP-8

FDS3512 from onsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the 80 V N-channel MOSFET, tied to the body diode anode (continuous diode current up to 2.1 A). |
| 2 | S | passive | Source of the 80 V N-channel MOSFET, tied to the body diode anode (continuous diode current up to 2.1 A). |
| 3 | S | passive | Source of the 80 V N-channel MOSFET, tied to the body diode anode (continuous diode current up to 2.1 A). |
| 4 | G | input | Gate of the N-channel MOSFET, rated for ±20 V gate-source voltage with a 2 to 4 V threshold at 250 µA. |
| 5 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |
| 6 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |
| 7 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |
| 8 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 80 | V | TA=25°C | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V | TA=25°C | 2 |
| Drain Current Continuous | ID |  |  | 4 | A | Note 1a | 2 |
| Drain Current Pulsed | ID |  |  | 30 | A | Pulsed | 2 |
| Power Dissipation Single Operation | PD |  |  | 2.5 | W | Note 1a | 2 |
| Power Dissipation Single Operation | PD |  |  | 1.2 | W | Note 1b | 2 |
| Power Dissipation Single Operation | PD |  |  | 1 | W | Note 1c | 2 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 50 | °C/W | Note 1a | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 25 | °C/W | Note 1 | 2 |
| Single Pulse Drain-Source Avalanche Energy | WDSS |  |  | 90 | mJ | VDD = 40 V, ID = 4.0 A | 3 |
| Maximum Drain-Source Avalanche Current | IAR |  |  | 4 | A |  | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS = 0 V, ID = 250 µA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 64 V, VGS = 0 V | 3 |
| Gate-Body Leakage, Forward | IGSSF |  |  | 100 | nA | VGS = 20 V, VDS = 0 V | 3 |
| Gate-Body Leakage, Reverse | IGSSR | -100 |  |  | nA | VGS = -20 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.4 | 4 | V | VDS = VGS, ID = 250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 50 | 70 | mΩ | VGS = 10 V, ID = 4.0 A | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 55 | 80 | mΩ | VGS = 6 V, ID = 3.7A | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 91 | 135 | mΩ | VGS = 10 V, ID = 4.0 A, TJ = 125°C | 3 |
| On-State Drain Current | ID(on) | 20 |  |  | A | VGS = 10 V, VDS = 5 V | 3 |
| Turn-On Delay Time | td(on) |  | 7 | 14 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 |
| Turn-On Rise Time | tr |  | 3 | 6 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 24 | 38 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 |
| Turn-Off Fall Time | tf |  | 4 | 8 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 |
| Total Gate Charge | Qg |  | 13 | 18 | nC | VDS = 40 V, ID = 4.0 A, VGS = 10 V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 2.1 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  | 0.8 | 1.2 | V | VGS = 0 V, IS = 2.1 A (Note 2) | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 80 |  | mV/°C | ID = 250 µA, Referenced to 25°C | 3 |
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ |  | -6 |  | mV/°C | ID = 250 µA, Referenced to 25°C | 3 |
| Forward Transconductance | GFS |  | 14 |  | S | VGS = 10 V, ID = 4.0 A | 3 |
| Input Capacitance | Ciss |  | 634 |  | pF | VDS = 40 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss |  | 58 |  | pF | VDS = 40 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 28 |  | pF | VDS = 40 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Gate-Source Charge | Qgs |  | 2.4 |  | nC | VDS = 40 V, ID = 4.0 A, VGS = 10 V | 3 |
| Gate-Drain Charge | Qgd |  | 2.8 |  | nC | VDS = 40 V, ID = 4.0 A, VGS = 10 V | 3 |

## CAD (KiCad official)

- Symbol: `FDS3512`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `fds3512-etched.step` / `fds3512-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds3512.step` / `fds3512.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fds3512-d.pdf) (7 pp, sha256 `3c2ef4fba2f4fae4`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds3512-datasheet.pdf)