component
FDS3512
Public Made by Adomby adom
onsemi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS3512
onsemi · MOSFETs · SOP-8
FDS3512 from onsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the 80 V N-channel MOSFET, tied to the body diode anode (continuous diode current up to 2.1 A). |
| 2 | S | passive | Source of the 80 V N-channel MOSFET, tied to the body diode anode (continuous diode current up to 2.1 A). |
| 3 | S | passive | Source of the 80 V N-channel MOSFET, tied to the body diode anode (continuous diode current up to 2.1 A). |
| 4 | G | input | Gate of the N-channel MOSFET, rated for ±20 V gate-source voltage with a 2 to 4 V threshold at 250 µA. |
| 5 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |
| 6 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |
| 7 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |
| 8 | D | passive | Drain of the MOSFET, rated for 80 V drain-source and 4.0 A continuous (30 A pulsed) drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 80 | V | TA=25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA=25°C | 2 | |
| Drain Current Continuous | ID | 4 | A | Note 1a | 2 | ||
| Drain Current Pulsed | ID | 30 | A | Pulsed | 2 | ||
| Power Dissipation Single Operation | PD | 2.5 | W | Note 1a | 2 | ||
| Power Dissipation Single Operation | PD | 1.2 | W | Note 1b | 2 | ||
| Power Dissipation Single Operation | PD | 1 | W | Note 1c | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W | Note 1a | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 25 | °C/W | Note 1 | 2 | ||
| Single Pulse Drain-Source Avalanche Energy | WDSS | 90 | mJ | VDD = 40 V, ID = 4.0 A | 3 | ||
| Maximum Drain-Source Avalanche Current | IAR | 4 | A | 3 | |||
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | VGS = 0 V, ID = 250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 64 V, VGS = 0 V | 3 | ||
| Gate-Body Leakage, Forward | IGSSF | 100 | nA | VGS = 20 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage, Reverse | IGSSR | -100 | nA | VGS = -20 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 2.4 | 4 | V | VDS = VGS, ID = 250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 50 | 70 | mΩ | VGS = 10 V, ID = 4.0 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 55 | 80 | mΩ | VGS = 6 V, ID = 3.7A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 91 | 135 | mΩ | VGS = 10 V, ID = 4.0 A, TJ = 125°C | 3 | |
| On-State Drain Current | ID(on) | 20 | A | VGS = 10 V, VDS = 5 V | 3 | ||
| Turn-On Delay Time | td(on) | 7 | 14 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Turn-On Rise Time | tr | 3 | 6 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 24 | 38 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Turn-Off Fall Time | tf | 4 | 8 | ns | VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Total Gate Charge | Qg | 13 | 18 | nC | VDS = 40 V, ID = 4.0 A, VGS = 10 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 2.1 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0 V, IS = 2.1 A (Note 2) | 3 | |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 80 | mV/°C | ID = 250 µA, Referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | -6 | mV/°C | ID = 250 µA, Referenced to 25°C | 3 | ||
| Forward Transconductance | GFS | 14 | S | VGS = 10 V, ID = 4.0 A | 3 | ||
| Input Capacitance | Ciss | 634 | pF | VDS = 40 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Output Capacitance | Coss | 58 | pF | VDS = 40 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 28 | pF | VDS = 40 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Gate-Source Charge | Qgs | 2.4 | nC | VDS = 40 V, ID = 4.0 A, VGS = 10 V | 3 | ||
| Gate-Drain Charge | Qgd | 2.8 | nC | VDS = 40 V, ID = 4.0 A, VGS = 10 V | 3 |
CAD (KiCad official)
- Symbol:
FDS3512 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
fds3512-etched.step/fds3512-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds3512.step/fds3512.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
3c2ef4fba2f4fae4, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).