# FDS2672

**onsemi** · MOSFETs · SO-8

FDS2672 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 2 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 3 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 4 | G | input | Gate of the N-channel MOSFET, rated ±20 V gate-to-source with max rDS(on) specified at VGS = 10 V and 6 V. |
| 5 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |
| 6 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |
| 7 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |
| 8 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 200 |  |  | V | ID = 250µA, VGS = 0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 160V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 160V, VGS=0V, TJ = 55°C | 3 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±20V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | 2 | 2.9 | 4 | V | VGS = VDS, ID = 250µA | 3 |
| Drain to Source On Resistance | rDS(on) |  | 59 | 70 | mΩ | VGS = 10V, ID = 3.9A | 3 |
| Drain to Source On Resistance | rDS(on) |  | 63 | 80 | mΩ | VGS = 6V, ID = 3.5A | 3 |
| Drain to Source On Resistance | rDS(on) |  | 124 | 148 | mΩ | VGS = 10V, ID = 3.9A, TJ = 125°C | 3 |
| Input Capacitance | Ciss |  | 1905 | 2535 | pF | VDS = 100V, VGS = 0V, f = 1MHz | 3 |
| Output Capacitance | Coss |  | 100 | 135 | pF | VDS = 100V, VGS = 0V, f = 1MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 30 | 45 | pF | VDS = 100V, VGS = 0V, f = 1MHz | 3 |
| Turn-On Delay Time | td(on) |  | 22 | 35 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 |
| Rise Time | tr |  | 10 | 20 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 35 | 56 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 |
| Fall Time | tf |  | 10 | 20 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 |
| Total Gate Charge at 10V | Qg(TOT) |  | 33 | 46 | nC | VDD =100V, ID = 3.9A | 3 |
| Source to Drain Diode Voltage | VSD |  | 0.75 | 1.2 | V | VGS = 0V, IS = 3.9A | 3 |
| Reverse Recovery Time | trr |  | 67 | 101 | ns | IF = 3.9A, di/dt = 100A/µs | 3 |
| Reverse Recovery Charge | Qrr |  | 179 | 269 | nC | IF = 3.9A, di/dt = 100A/µs | 3 |
| Drain to Source Voltage | VDS |  |  | 200 | V | TA = 25°C | 2 |
| Gate to Source Voltage | VGS | -20 |  | 20 | V | TA = 25°C | 2 |
| Drain Current - Continuous | ID |  |  | 3.9 | A | Note 1a | 2 |
| Drain Current - Pulsed | ID |  |  | 50 | A |  | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 37.5 | mJ | Note 3 | 2 |
| Power Dissipation | PD |  |  | 2.5 | W | Note 1a | 2 |
| Power Dissipation | PD |  |  | 1 | W | Note 1b | 2 |
| Operating and Storage Temperature | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 25 | °C/W | Note 1 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 50 | °C/W | Note 1a | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 125 | °C/W | Note 1b | 2 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ |  | 206 |  | mV/°C | ID = 250µA, referenced to 25°C | 3 |
| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ |  | -11 |  | mV/°C | ID = 250µA, referenced to 25°C | 3 |
| Forward Transconductance | gFS |  | 15 |  | S | VDS = 10V, ID = 3.9A | 3 |
| Gate Resistance | Rg |  | 0.7 |  | Ω | f = 1MHz | 3 |
| Gate to Source Gate Charge | Qgs |  | 11 |  | nC | VDD =100V, ID = 3.9A | 3 |
| Gate to Drain Miller Charge | Qgd |  | 7 |  | nC | VDD =100V, ID = 3.9A | 3 |

## CAD (KiCad official)

- Symbol: `FDS2672`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `fds2672-etched.step` / `fds2672-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds2672.step` / `fds2672.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fds2672-d.pdf) (8 pp, sha256 `2a556d9d51568bd9`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds2672-datasheet.pdf)