component
FDS2672
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| fds2672-etched.glb | 7d ago |
| fds2672-etched.step | 7d ago |
| fds2672-hero.glb | 7d ago |
| fds2672-hero.overlay.json | 7d ago |
| fds2672.glb | 7d ago |
| fds2672.kicad_mod | 7d ago |
| fds2672.kicad_sym | 7d ago |
| fds2672.lbr | 7d ago |
| fds2672.step | 7d ago |
| package.json | 7d ago |
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| README.md | 7d ago |
| verification.json | 7d ago |
FDS2672
onsemi · MOSFETs · SO-8
FDS2672 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 2 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 3 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 4 | G | input | Gate of the N-channel MOSFET, rated ±20 V gate-to-source with max rDS(on) specified at VGS = 10 V and 6 V. |
| 5 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |
| 6 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |
| 7 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |
| 8 | D | passive | Drain of the MOSFET, rated 200 V drain-to-source and 3.9 A continuous, one of four drain pins (5-8) tied together. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 200 | V | ID = 250µA, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 160V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 160V, VGS=0V, TJ = 55°C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 2 | 2.9 | 4 | V | VGS = VDS, ID = 250µA | 3 |
| Drain to Source On Resistance | rDS(on) | 59 | 70 | mΩ | VGS = 10V, ID = 3.9A | 3 | |
| Drain to Source On Resistance | rDS(on) | 63 | 80 | mΩ | VGS = 6V, ID = 3.5A | 3 | |
| Drain to Source On Resistance | rDS(on) | 124 | 148 | mΩ | VGS = 10V, ID = 3.9A, TJ = 125°C | 3 | |
| Input Capacitance | Ciss | 1905 | 2535 | pF | VDS = 100V, VGS = 0V, f = 1MHz | 3 | |
| Output Capacitance | Coss | 100 | 135 | pF | VDS = 100V, VGS = 0V, f = 1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 30 | 45 | pF | VDS = 100V, VGS = 0V, f = 1MHz | 3 | |
| Turn-On Delay Time | td(on) | 22 | 35 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 | |
| Turn-Off Delay Time | td(off) | 35 | 56 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 | |
| Fall Time | tf | 10 | 20 | ns | VDD = 100V, ID = 3.9A, VGS = 10V, RGEN = 6Ω | 3 | |
| Total Gate Charge at 10V | Qg(TOT) | 33 | 46 | nC | VDD =100V, ID = 3.9A | 3 | |
| Source to Drain Diode Voltage | VSD | 0.75 | 1.2 | V | VGS = 0V, IS = 3.9A | 3 | |
| Reverse Recovery Time | trr | 67 | 101 | ns | IF = 3.9A, di/dt = 100A/µs | 3 | |
| Reverse Recovery Charge | Qrr | 179 | 269 | nC | IF = 3.9A, di/dt = 100A/µs | 3 | |
| Drain to Source Voltage | VDS | 200 | V | TA = 25°C | 2 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | TA = 25°C | 2 | |
| Drain Current - Continuous | ID | 3.9 | A | Note 1a | 2 | ||
| Drain Current - Pulsed | ID | 50 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 37.5 | mJ | Note 3 | 2 | ||
| Power Dissipation | PD | 2.5 | W | Note 1a | 2 | ||
| Power Dissipation | PD | 1 | W | Note 1b | 2 | ||
| Operating and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 25 | °C/W | Note 1 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W | Note 1a | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | °C/W | Note 1b | 2 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | 206 | mV/°C | ID = 250µA, referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | -11 | mV/°C | ID = 250µA, referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 15 | S | VDS = 10V, ID = 3.9A | 3 | ||
| Gate Resistance | Rg | 0.7 | Ω | f = 1MHz | 3 | ||
| Gate to Source Gate Charge | Qgs | 11 | nC | VDD =100V, ID = 3.9A | 3 | ||
| Gate to Drain Miller Charge | Qgd | 7 | nC | VDD =100V, ID = 3.9A | 3 |
CAD (KiCad official)
- Symbol:
FDS2672 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds2672-etched.step/fds2672-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds2672.step/fds2672.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
2a556d9d51568bd9, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).