component
FDPF20N50T
Public Made by Adomby adom
onsemi MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDPF20N50T
onsemi · MOSFETs · TO-220F
FDPF20N50T from onsemi, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, rated for a gate-source voltage of ±30 V per the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET, rated for 500 V drain-source voltage and 20 A continuous drain current at TC = 25°C, with drain current limited by maximum junction temperature. |
| 3 | S | passive | Source of the MOSFET, the reference terminal for the gate-source voltage, with maximum continuous diode forward current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | 2 | |||
| Drain Current - Continuous (TC = 25°C) | ID | 20 | A | TC = 25°C; drain current limited by maximum junction temperature | 2 | ||
| Drain Current - Continuous (TC = 100°C) | ID | 12.9 | A | TC = 100°C; drain current limited by maximum junction temperature | 2 | ||
| Drain Current - Pulsed | IDM | 80 | A | Note 1 | 2 | ||
| Gate-Source voltage | VGSS | -30 | 30 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 1110 | mJ | Note 2 | 2 | ||
| Avalanche Current | IAR | 20 | A | Note 1 | 2 | ||
| Repetitive Avalanche Energy | EAR | 25 | mJ | Note 1 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 2 | ||
| Power Dissipation | PD | 38.5 | W | TC = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8 inch from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 3.3 | °C/W | FDPF20N50 / FDPF20N50T | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0 V, ID = 250 μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 500 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 400 V, TC = 125°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250 μA | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.2 | 0.23 | Ω | VGS = 10 V, ID = 10 A | 3 | |
| Input Capacitance | Ciss | 2400 | 3120 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Output Capacitance | Coss | 355 | 465 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Turn-On Delay Time | td(on) | 95 | 200 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Turn-On Rise Time | tr | 375 | 760 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Turn-Off Delay Time | td(off) | 100 | 210 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Turn-Off Fall Time | tf | 105 | 220 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Total Gate Charge | Qg | 45.6 | 59.5 | nC | VDS = 400 V, ID = 20 A, VGS = 10 V (Note 4) | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 20 | A | 3 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 80 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 20 A | 3 |
CAD (KiCad official)
- Symbol:
FDPF20N50T - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (12 pp, sha256
8f9af89f1a59561c, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDPF20N50T
**onsemi** · MOSFETs · TO-220F
FDPF20N50T from onsemi, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, rated for a gate-source voltage of ±30 V per the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET, rated for 500 V drain-source voltage and 20 A continuous drain current at TC = 25°C, with drain current limited by maximum junction temperature. |
| 3 | S | passive | Source of the MOSFET, the reference terminal for the gate-source voltage, with maximum continuous diode forward current of 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 500 | V | | 2 |
| Drain Current - Continuous (TC = 25°C) | ID | | | 20 | A | TC = 25°C; drain current limited by maximum junction temperature | 2 |
| Drain Current - Continuous (TC = 100°C) | ID | | | 12.9 | A | TC = 100°C; drain current limited by maximum junction temperature | 2 |
| Drain Current - Pulsed | IDM | | | 80 | A | Note 1 | 2 |
| Gate-Source voltage | VGSS | -30 | | 30 | V | | 2 |
| Single Pulsed Avalanche Energy | EAS | | | 1110 | mJ | Note 2 | 2 |
| Avalanche Current | IAR | | | 20 | A | Note 1 | 2 |
| Repetitive Avalanche Energy | EAR | | | 25 | mJ | Note 1 | 2 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | Note 3 | 2 |
| Power Dissipation | PD | | | 38.5 | W | TC = 25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Maximum Lead Temperature for Soldering | TL | | | 300 | °C | 1/8 inch from case for 5 seconds | 2 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 3.3 | °C/W | FDPF20N50 / FDPF20N50T | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 500 | | | V | VGS = 0 V, ID = 250 μA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 500 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS = 400 V, TC = 125°C | 3 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS = 30 V, VDS = 0 V | 3 |
| Gate-Body Leakage Current, Reverse | IGSSR | | | -100 | nA | VGS = -30 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | 3 | | 5 | V | VDS = VGS, ID = 250 μA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | | 0.2 | 0.23 | Ω | VGS = 10 V, ID = 10 A | 3 |
| Input Capacitance | Ciss | | 2400 | 3120 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss | | 355 | 465 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Turn-On Delay Time | td(on) | | 95 | 200 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 |
| Turn-On Rise Time | tr | | 375 | 760 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 |
| Turn-Off Delay Time | td(off) | | 100 | 210 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 |
| Turn-Off Fall Time | tf | | 105 | 220 | ns | VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 |
| Total Gate Charge | Qg | | 45.6 | 59.5 | nC | VDS = 400 V, ID = 20 A, VGS = 10 V (Note 4) | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 20 | A | | 3 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 80 | A | | 3 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | VGS = 0 V, IS = 20 A | 3 |
## CAD (KiCad official)
- Symbol: `FDPF20N50T`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fdpf20n50t-d.pdf) (12 pp, sha256 `8f9af89f1a59561c`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdpf20n50t-datasheet.pdf)