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FDPF20N50T

Public Made by Adom

by adom

onsemi MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDPF20N50T

onsemi · MOSFETs · TO-220F

FDPF20N50T from onsemi, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET, rated for a gate-source voltage of ±30 V per the absolute maximum ratings.
2 D passive Drain of the MOSFET, rated for 500 V drain-source voltage and 20 A continuous drain current at TC = 25°C, with drain current limited by maximum junction temperature.
3 S passive Source of the MOSFET, the reference terminal for the gate-source voltage, with maximum continuous diode forward current of 20 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V 2
Drain Current - Continuous (TC = 25°C) ID 20 A TC = 25°C; drain current limited by maximum junction temperature 2
Drain Current - Continuous (TC = 100°C) ID 12.9 A TC = 100°C; drain current limited by maximum junction temperature 2
Drain Current - Pulsed IDM 80 A Note 1 2
Gate-Source voltage VGSS -30 30 V 2
Single Pulsed Avalanche Energy EAS 1110 mJ Note 2 2
Avalanche Current IAR 20 A Note 1 2
Repetitive Avalanche Energy EAR 25 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 2
Power Dissipation PD 38.5 W TC = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/8 inch from case for 5 seconds 2
Thermal Resistance, Junction-to-Case RθJC 3.3 °C/W FDPF20N50 / FDPF20N50T 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 2
Drain-Source Breakdown Voltage BVDSS 500 V VGS = 0 V, ID = 250 μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 500 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 400 V, TC = 125°C 3
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 3
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 μA 3
Static Drain-Source On-Resistance RDS(on) 0.2 0.23 Ω VGS = 10 V, ID = 10 A 3
Input Capacitance Ciss 2400 3120 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 355 465 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Turn-On Delay Time td(on) 95 200 ns VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-On Rise Time tr 375 760 ns VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-Off Delay Time td(off) 100 210 ns VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-Off Fall Time tf 105 220 ns VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Total Gate Charge Qg 45.6 59.5 nC VDS = 400 V, ID = 20 A, VGS = 10 V (Note 4) 3
Maximum Continuous Drain-Source Diode Forward Current IS 20 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 80 A 3
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 20 A 3

CAD (KiCad official)

  • Symbol: FDPF20N50T
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 8f9af89f1a59561c, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF