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FDP51N25

Public Made by Adom

by adom

onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDP51N25

onsemi · MOSFETs · TO-220

FDP51N25 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±30 V (VGSS).
2 D passive Drain terminal; continuous drain current is rated at 51 A at TC = 25°C and the device is rated at 250 V VDSS.
3 S passive Source terminal; the body diode maximum continuous forward current is 51 A (IS).

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 250 V VGS = 0 V, ID = 250 μA, TJ = 25 °C 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 250 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 200 V, TC = 125°C 3
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 3
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 μA 3
Static Drain-Source On-Resistance RDS(on) 0.048 0.06 Ω VGS = 10 V, ID = 25.5 A 3
Input Capacitance Ciss 2620 3410 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Output Capacitance Coss 530 690 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Reverse Transfer Capacitance Crss 63 90 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Turn-On Delay Time td(on) 62 135 ns VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-On Rise Time tr 465 940 ns VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-Off Delay Time td(off) 98 205 ns VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-Off Fall Time tf 130 270 ns VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Total Gate Charge Qg 55 70 nC VDS = 200 V, ID = 51 A, VGS = 10 V (Note 4) 3
Maximum Continuous Drain-Source Diode Forward Current IS 51 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 204 A 3
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 51 A 3
Drain-Source Voltage VDSS 250 V 2
Drain Current - Continuous ID 51 A TC = 25°C 2
Drain Current - Continuous ID 30 A TC = 100°C 2
Drain Current - Pulsed IDM 204 A Note 1 2
Gate-Source Voltage VGSS -30 30 V 2
Single Pulsed Avalanche Energy EAS 1111 mJ Note 2 2
Avalanche Current IAR 51 A Note 1 2
Repetitive Avalanche Energy EAR 32 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 2
Power Dissipation PD 320 W TC = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/8 in from case for 5 seconds 2
Thermal Resistance, Junction-to-Case, Max. RθJC 0.39 °C/W FDP51N25 column 2
Thermal Resistance, Junction-to-Ambient, Max. RθJA 62.5 °C/W FDP51N25 column 2

CAD (KiCad official)

  • Symbol: FDP51N25
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fdp51n25-etched.step / fdp51n25-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdp51n25.step / fdp51n25.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 3df3eb3240f6fe6f, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF