component
FDP51N25
Public Made by Adomby adom
onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDP51N25
onsemi · MOSFETs · TO-220
FDP51N25 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±30 V (VGSS). |
| 2 | D | passive | Drain terminal; continuous drain current is rated at 51 A at TC = 25°C and the device is rated at 250 V VDSS. |
| 3 | S | passive | Source terminal; the body diode maximum continuous forward current is 51 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 250 | V | VGS = 0 V, ID = 250 μA, TJ = 25 °C | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 250 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 200 V, TC = 125°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250 μA | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.048 | 0.06 | Ω | VGS = 10 V, ID = 25.5 A | 3 | |
| Input Capacitance | Ciss | 2620 | 3410 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 3 | |
| Output Capacitance | Coss | 530 | 690 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 63 | 90 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 3 | |
| Turn-On Delay Time | td(on) | 62 | 135 | ns | VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Turn-On Rise Time | tr | 465 | 940 | ns | VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Turn-Off Delay Time | td(off) | 98 | 205 | ns | VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Turn-Off Fall Time | tf | 130 | 270 | ns | VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) | 3 | |
| Total Gate Charge | Qg | 55 | 70 | nC | VDS = 200 V, ID = 51 A, VGS = 10 V (Note 4) | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 51 | A | 3 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 204 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 51 A | 3 | ||
| Drain-Source Voltage | VDSS | 250 | V | 2 | |||
| Drain Current - Continuous | ID | 51 | A | TC = 25°C | 2 | ||
| Drain Current - Continuous | ID | 30 | A | TC = 100°C | 2 | ||
| Drain Current - Pulsed | IDM | 204 | A | Note 1 | 2 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 1111 | mJ | Note 2 | 2 | ||
| Avalanche Current | IAR | 51 | A | Note 1 | 2 | ||
| Repetitive Avalanche Energy | EAR | 32 | mJ | Note 1 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 2 | ||
| Power Dissipation | PD | 320 | W | TC = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8 in from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction-to-Case, Max. | RθJC | 0.39 | °C/W | FDP51N25 column | 2 | ||
| Thermal Resistance, Junction-to-Ambient, Max. | RθJA | 62.5 | °C/W | FDP51N25 column | 2 |
CAD (KiCad official)
- Symbol:
FDP51N25 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fdp51n25-etched.step/fdp51n25-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdp51n25.step/fdp51n25.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (13 pp, sha256
3df3eb3240f6fe6f, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).