component
FDP075N15A-F102
Public Made by Adomby adom
onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
FDP075N15A-F102
onsemi · MOSFETs · TO-220
FDP075N15A-F102 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; gate-to-source voltage is rated ±20 V DC and ±30 V AC (f > 1 Hz). |
| 2 | D | passive | Drain of the MOSFET; rated 150 V drain-to-source (VDSS) with 130 A continuous drain current at TC = 25°C, and the package limits current to 120 A. |
| 3 | S | passive | Source of the MOSFET; maximum continuous body diode forward current is 130 A and maximum pulsed diode forward current is 520 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 150 | V | 2 | |||
| Gate to Source Voltage DC | VGSS | -20 | 20 | V | DC | 2 | |
| Gate to Source Voltage AC | VGSS | -30 | 30 | V | AC (f > 1 Hz) | 2 | |
| Drain Current - Continuous | ID | 130 | A | TC = 25°C; *Package limitation current is 120 A | 2 | ||
| Drain Current - Continuous | ID | 92 | A | TC = 100°C | 2 | ||
| Drain Current - Pulsed | IDM | 522 | A | Note 1: pulse-width limited by maximum junction temperature | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 588 | mJ | Note 2: Starting TJ = 25°C, L = 3 mH, IAS = 19.8 A | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 6 | V/ns | Note 3: ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C | 2 | ||
| Power Dissipation | PD | 333 | W | TC = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8 in from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.45 | °C/W | Max. | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | Minimum pad of 2-oz copper, Max. | 2 | ||
| Drain to Source Breakdown Voltage | BVDSS | 150 | V | ID = 250 μA, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 120 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μA | VDS = 120 V, TC = 150°C | 3 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V | 3 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS = VDS, ID = 250 μA | 3 | |
| Static Drain to Source On Resistance | RDS(on) | 6.25 | 7.5 | mΩ | VGS = 10 V, ID = 100 A | 3 | |
| Input Capacitance | Ciss | 5525 | 7350 | pF | VDS = 75 V, VGS = 0 V, f = 1 MHz | 3 | |
| Output Capacitance | Coss | 516 | 685 | pF | VDS = 75 V, VGS = 0 V, f = 1 MHz | 3 | |
| Total Gate Charge at 10V | Qg(tot) | 77 | 100 | nC | VDS = 75 V, ID = 100 A, VGS = 10 V (Note 4) | 3 | |
| Turn-On Delay Time | td(on) | 28 | 66 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 | |
| Turn-On Rise Time | tr | 37 | 84 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 | |
| Turn-Off Delay Time | td(off) | 62 | 134 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 | |
| Turn-Off Fall Time | tf | 21 | 52 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 130 | A | 3 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 520 | A | 3 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.25 | V | VGS = 0 V, ISD = 100 A | 3 |
CAD (KiCad official)
- Symbol:
FDP075N15A-F102 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fdp075n15a-f102-etched.step/fdp075n15a-f102-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdp075n15a-f102.step/fdp075n15a-f102.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (11 pp, sha256
082615d9ae9a5b5f, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDP075N15A-F102
**onsemi** · MOSFETs · TO-220
FDP075N15A-F102 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; gate-to-source voltage is rated ±20 V DC and ±30 V AC (f > 1 Hz). |
| 2 | D | passive | Drain of the MOSFET; rated 150 V drain-to-source (VDSS) with 130 A continuous drain current at TC = 25°C, and the package limits current to 120 A. |
| 3 | S | passive | Source of the MOSFET; maximum continuous body diode forward current is 130 A and maximum pulsed diode forward current is 520 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | | | 150 | V | | 2 |
| Gate to Source Voltage DC | VGSS | -20 | | 20 | V | DC | 2 |
| Gate to Source Voltage AC | VGSS | -30 | | 30 | V | AC (f > 1 Hz) | 2 |
| Drain Current - Continuous | ID | | | 130 | A | TC = 25°C; *Package limitation current is 120 A | 2 |
| Drain Current - Continuous | ID | | | 92 | A | TC = 100°C | 2 |
| Drain Current - Pulsed | IDM | | | 522 | A | Note 1: pulse-width limited by maximum junction temperature | 2 |
| Single Pulsed Avalanche Energy | EAS | | | 588 | mJ | Note 2: Starting TJ = 25°C, L = 3 mH, IAS = 19.8 A | 2 |
| Peak Diode Recovery dv/dt | dv/dt | | | 6 | V/ns | Note 3: ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C | 2 |
| Power Dissipation | PD | | | 333 | W | TC = 25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 2 |
| Maximum Lead Temperature for Soldering | TL | | | 300 | °C | 1/8 in from case for 5 seconds | 2 |
| Thermal Resistance, Junction to Case | RθJC | | | 0.45 | °C/W | Max. | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62.5 | °C/W | Minimum pad of 2-oz copper, Max. | 2 |
| Drain to Source Breakdown Voltage | BVDSS | 150 | | | V | ID = 250 μA, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 120 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 500 | μA | VDS = 120 V, TC = 150°C | 3 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VGS = VDS, ID = 250 μA | 3 |
| Static Drain to Source On Resistance | RDS(on) | | 6.25 | 7.5 | mΩ | VGS = 10 V, ID = 100 A | 3 |
| Input Capacitance | Ciss | | 5525 | 7350 | pF | VDS = 75 V, VGS = 0 V, f = 1 MHz | 3 |
| Output Capacitance | Coss | | 516 | 685 | pF | VDS = 75 V, VGS = 0 V, f = 1 MHz | 3 |
| Total Gate Charge at 10V | Qg(tot) | | 77 | 100 | nC | VDS = 75 V, ID = 100 A, VGS = 10 V (Note 4) | 3 |
| Turn-On Delay Time | td(on) | | 28 | 66 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 |
| Turn-On Rise Time | tr | | 37 | 84 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 |
| Turn-Off Delay Time | td(off) | | 62 | 134 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 |
| Turn-Off Fall Time | tf | | 21 | 52 | ns | VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) | 3 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 130 | A | | 3 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 520 | A | | 3 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.25 | V | VGS = 0 V, ISD = 100 A | 3 |
## CAD (KiCad official)
- Symbol: `FDP075N15A-F102`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `fdp075n15a-f102-etched.step` / `fdp075n15a-f102-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdp075n15a-f102.step` / `fdp075n15a-f102.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588889146077696000) (11 pp, sha256 `082615d9ae9a5b5f`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdp075n15a-f102-datasheet.pdf)