component

FDP047N08

Public Made by Adom

by adom

onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfdp047n08factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 10d ago
viewers fdp047n08: viewers · Ray 10d ago
fdp047n08-etched.glb Publish 0.1.0 · Ray 10d ago
fdp047n08-etched.step fdp047n08: factory component page (tier=mfr) · Ray 10d ago
fdp047n08-hero.glb fdp047n08: hero GLB from the etched model (keeps the MPN mark) · Ray 10d ago
fdp047n08-hero.overlay.json Publish 0.1.0 · Ray 10d ago
fdp047n08.glb Publish 0.1.0 · Ray 10d ago
fdp047n08.kicad_mod Publish 0.1.0 · Ray 10d ago
fdp047n08.kicad_sym Publish 0.1.0 · Ray 10d ago
fdp047n08.lbr Publish 0.1.0 · Ray 10d ago
fdp047n08.step Publish 0.1.0 · Ray 10d ago
package.json Publish 0.1.0 · Ray 10d ago
page.json Set visibility: public · Ray 10d ago
README.md Publish 0.1.0 · Ray 10d ago

FDP047N08

onsemi · MOSFETs · TO-220

FDP047N08 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage VGSS is rated at ±20 V.
2 D passive Drain terminal; the drain-source voltage VDSS is rated at 75 V, and continuous drain current is 164 A at TC = 25°C (package-limited to 80 A per the datasheet note).
3 S passive Source terminal; the body diode maximum forward continuous current IS is 164 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-body leakage current IGSS -100 100 nA VGS = ±20 V, VDS = 0 V 3
Gate threshold voltage VGS(th) 2.5 3.5 4.5 V VGS = VDS, ID = 250 µA 3
Drain-source on-resistance RDS(on) 3.7 4.7 mΩ VGS = 10 V, ID = 80 A 3
Drain-source breakdown voltage BVDSS 75 V ID = 250 A, VGS = 0 V, TC = 25°C 3
Zero gate voltage drain current (TC=25°C) IDSS 1 µA VDS = 75 V, VGS = 0 V 3
Zero gate voltage drain current (TC=150°C) IDSS 500 µA VDS = 75 V, TC = 150°C 3
Input capacitance Ciss 7080 9415 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 870 1155 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 410 615 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Total gate charge at 10 V Qg(tot) 117 152 nC VDS = 60 V, ID = 80 A, VGS = 10 V 3
Body diode forward voltage VSD 1.25 V VGS = 0 V, ISD = 80 A 3
Turn-on delay time td(on) 100 210 ns VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V 3
Turn-on rise time tr 147 304 ns VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V 3
Turn-off delay time td(off) 220 450 ns VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V 3
Turn-off fall time tf 114 238 ns VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V 3
Maximum body diode continuous forward current IS 164 A 3
Maximum body diode pulsed forward current ISM 656 A 3
Drain-source voltage VDSS 75 V 2
Gate-source voltage VGSS -20 20 V 2
Continuous drain current ID 164 A TC = 25°C; package limit current is 80 A (footnote *) 2
Continuous drain current ID 116 A TC = 100°C; package limit current is 80 A (footnote *) 2
Pulsed drain current IDM 656 A Note 1: pulse width limited by maximum junction temperature 2
Single pulse avalanche energy EAS 670 mJ Note 2: L=0.21 mH, IAS=80 A, VDD=50 V, RG=25 Ω, TJ start=25°C 2
Peak diode recovery dv/dt dv/dt 6 V/ns Note 3: ISD ≤ 80 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, TJ start=25°C 2
Power dissipation PD 268 W TC = 25°C 2
Power dissipation derating above 25°C PD 1.79 W/°C Derate above 25°C 2
Operating and storage temperature range TJ, TSTG -55 175 °C 2
Maximum lead temperature for soldering TL 300 °C 1/8 inch from case, 5 s 2
Junction-to-case thermal resistance RθJC 0.56 °C/W Maximum 2
Junction-to-ambient thermal resistance RθJA 62.5 °C/W Maximum 2
Breakdown voltage temperature coefficient BVDSS/TJ 0.02 V/°C ID = 250 A, referenced to 25°C 3
Forward transconductance gFS 150 S VDS = 10 V, ID = 80 A 3
Gate-source charge Qgs 37 nC 3
Gate-drain (Miller) charge Qgd 32 nC 3
Reverse recovery time trr 45 ns VGS = 0 V, ISD = 80 A, dIF/dt = 100 A/µs 3
Reverse recovery charge Qrr 66 nC VGS = 0 V, ISD = 80 A, dIF/dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: FDP047N08
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fdp047n08-etched.step / fdp047n08-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdp047n08.step / fdp047n08.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 99c29cb97b885c6c, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF