component
FDP047N08
Public Made by Adomby adom
onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDP047N08
onsemi · MOSFETs · TO-220
FDP047N08 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage VGSS is rated at ±20 V. |
| 2 | D | passive | Drain terminal; the drain-source voltage VDSS is rated at 75 V, and continuous drain current is 164 A at TC = 25°C (package-limited to 80 A per the datasheet note). |
| 3 | S | passive | Source terminal; the body diode maximum forward continuous current IS is 164 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V | 3 | |
| Gate threshold voltage | VGS(th) | 2.5 | 3.5 | 4.5 | V | VGS = VDS, ID = 250 µA | 3 |
| Drain-source on-resistance | RDS(on) | 3.7 | 4.7 | mΩ | VGS = 10 V, ID = 80 A | 3 | |
| Drain-source breakdown voltage | BVDSS | 75 | V | ID = 250 A, VGS = 0 V, TC = 25°C | 3 | ||
| Zero gate voltage drain current (TC=25°C) | IDSS | 1 | µA | VDS = 75 V, VGS = 0 V | 3 | ||
| Zero gate voltage drain current (TC=150°C) | IDSS | 500 | µA | VDS = 75 V, TC = 150°C | 3 | ||
| Input capacitance | Ciss | 7080 | 9415 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 3 | |
| Output capacitance | Coss | 870 | 1155 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 410 | 615 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 3 | |
| Total gate charge at 10 V | Qg(tot) | 117 | 152 | nC | VDS = 60 V, ID = 80 A, VGS = 10 V | 3 | |
| Body diode forward voltage | VSD | 1.25 | V | VGS = 0 V, ISD = 80 A | 3 | ||
| Turn-on delay time | td(on) | 100 | 210 | ns | VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V | 3 | |
| Turn-on rise time | tr | 147 | 304 | ns | VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V | 3 | |
| Turn-off delay time | td(off) | 220 | 450 | ns | VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V | 3 | |
| Turn-off fall time | tf | 114 | 238 | ns | VDD = 37.5 V, ID = 80 A, RG = 25 Ω, VGS = 10 V | 3 | |
| Maximum body diode continuous forward current | IS | 164 | A | 3 | |||
| Maximum body diode pulsed forward current | ISM | 656 | A | 3 | |||
| Drain-source voltage | VDSS | 75 | V | 2 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous drain current | ID | 164 | A | TC = 25°C; package limit current is 80 A (footnote *) | 2 | ||
| Continuous drain current | ID | 116 | A | TC = 100°C; package limit current is 80 A (footnote *) | 2 | ||
| Pulsed drain current | IDM | 656 | A | Note 1: pulse width limited by maximum junction temperature | 2 | ||
| Single pulse avalanche energy | EAS | 670 | mJ | Note 2: L=0.21 mH, IAS=80 A, VDD=50 V, RG=25 Ω, TJ start=25°C | 2 | ||
| Peak diode recovery dv/dt | dv/dt | 6 | V/ns | Note 3: ISD ≤ 80 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, TJ start=25°C | 2 | ||
| Power dissipation | PD | 268 | W | TC = 25°C | 2 | ||
| Power dissipation derating above 25°C | PD | 1.79 | W/°C | Derate above 25°C | 2 | ||
| Operating and storage temperature range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8 inch from case, 5 s | 2 | ||
| Junction-to-case thermal resistance | RθJC | 0.56 | °C/W | Maximum | 2 | ||
| Junction-to-ambient thermal resistance | RθJA | 62.5 | °C/W | Maximum | 2 | ||
| Breakdown voltage temperature coefficient | BVDSS/TJ | 0.02 | V/°C | ID = 250 A, referenced to 25°C | 3 | ||
| Forward transconductance | gFS | 150 | S | VDS = 10 V, ID = 80 A | 3 | ||
| Gate-source charge | Qgs | 37 | nC | 3 | |||
| Gate-drain (Miller) charge | Qgd | 32 | nC | 3 | |||
| Reverse recovery time | trr | 45 | ns | VGS = 0 V, ISD = 80 A, dIF/dt = 100 A/µs | 3 | ||
| Reverse recovery charge | Qrr | 66 | nC | VGS = 0 V, ISD = 80 A, dIF/dt = 100 A/µs | 3 |
CAD (KiCad official)
- Symbol:
FDP047N08 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fdp047n08-etched.step/fdp047n08-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdp047n08.step/fdp047n08.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
99c29cb97b885c6c, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).