component
FDN340P
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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fdn340p: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
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17d ago
FDN340P
onsemi · MOSFETs · SOT-23
FDN340P from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive with RDS(ON) = 70 mΩ at VGS = -4.5 V and 110 mΩ at -2.5 V, absolute maximum VGSS ±8 V. |
| 2 | S | passive | Source; continuous drain-source diode forward current is -0.42 A maximum. |
| 3 | D | passive | Drain; VDSS -20 V, continuous drain current -2 A and pulsed -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 1 | ||
| Drain Current - Continuous | ID | -2 | A | Note 1a | 1 | ||
| Drain Current - Pulsed | ID | -10 | A | Pulsed | 1 | ||
| Power Dissipation for Single Operation | PD | 0.5 | W | Note 1a | 1 | ||
| Power Dissipation for Single Operation | PD | 0.46 | W | Note 1b | 1 | ||
| Operating and Storage Junction Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 250 | °C/W | Note 1a | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 75 | °C/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = –250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = –16 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = –16 V, VGS = 0 V, TJ=55°C | 2 | ||
| Gate-Body Leakage, Forward | IGSSF | 100 | nA | VGS = 8 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage, Reverse | IGSSR | -100 | nA | VGS = –8 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.8 | -1.5 | V | VDS = VGS, ID = –250 µA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 60 | 70 | mΩ | VGS = –4.5 V, ID = –2 A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 77 | 120 | mΩ | VGS = –4.5 V, ID = –2 A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 82 | 110 | mΩ | VGS= –2.5 V, ID = –1.7A | 2 | |
| On-State Drain Current | ID(on) | -5 | A | VGS = –4.5 V, VDS = –5 V | 2 | ||
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 | |
| Turn-On Rise Time | tr | 9 | 10 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 27 | 43 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 | |
| Turn-Off Fall Time | tf | 11 | 20 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 | |
| Total Gate Charge | Qg | 7.2 | 10 | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -0.42 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.7 | -1.2 | V | VGS = 0 V, IS = –0.42 A (Note 2) | 2 | |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | -12 | mV/°C | ID = –250 µA, Referenced to 25°C | 2 | ||
| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | 3 | mV/°C | ID = –250 µA, Referenced to 25°C | 2 | ||
| Forward Transconductance | gFS | 9 | S | VDS = –4.5 V, ID = –2 A | 2 | ||
| Input Capacitance | Ciss | 779 | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 121 | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 56 | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Gate-Source Charge | Qgs | 1.7 | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 | ||
| Gate-Drain Charge | Qgd | 1.5 | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 |
CAD (KiCad official)
- Symbol:
FDN340P - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fdn340p-etched.step/fdn340p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdn340p.step/fdn340p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
9f3e94c007a87808, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDN340P
**onsemi** · MOSFETs · SOT-23
FDN340P from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive with RDS(ON) = 70 mΩ at VGS = -4.5 V and 110 mΩ at -2.5 V, absolute maximum VGSS ±8 V. |
| 2 | S | passive | Source; continuous drain-source diode forward current is -0.42 A maximum. |
| 3 | D | passive | Drain; VDSS -20 V, continuous drain current -2 A and pulsed -10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGSS | -8 | | 8 | V | | 1 |
| Drain Current - Continuous | ID | | | -2 | A | Note 1a | 1 |
| Drain Current - Pulsed | ID | | | -10 | A | Pulsed | 1 |
| Power Dissipation for Single Operation | PD | | | 0.5 | W | Note 1a | 1 |
| Power Dissipation for Single Operation | PD | | | 0.46 | W | Note 1b | 1 |
| Operating and Storage Junction Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 250 | °C/W | Note 1a | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 75 | °C/W | Note 1 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS = 0 V, ID = –250 µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = –16 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = –16 V, VGS = 0 V, TJ=55°C | 2 |
| Gate-Body Leakage, Forward | IGSSF | | | 100 | nA | VGS = 8 V, VDS = 0 V | 2 |
| Gate-Body Leakage, Reverse | IGSSR | | | -100 | nA | VGS = –8 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.8 | -1.5 | V | VDS = VGS, ID = –250 µA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 60 | 70 | mΩ | VGS = –4.5 V, ID = –2 A | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 77 | 120 | mΩ | VGS = –4.5 V, ID = –2 A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 82 | 110 | mΩ | VGS= –2.5 V, ID = –1.7A | 2 |
| On-State Drain Current | ID(on) | -5 | | | A | VGS = –4.5 V, VDS = –5 V | 2 |
| Turn-On Delay Time | td(on) | | 10 | 20 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |
| Turn-On Rise Time | tr | | 9 | 10 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 27 | 43 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |
| Turn-Off Fall Time | tf | | 11 | 20 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |
| Total Gate Charge | Qg | | 7.2 | 10 | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | -0.42 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | -0.7 | -1.2 | V | VGS = 0 V, IS = –0.42 A (Note 2) | 2 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | | -12 | | mV/°C | ID = –250 µA, Referenced to 25°C | 2 |
| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | | 3 | | mV/°C | ID = –250 µA, Referenced to 25°C | 2 |
| Forward Transconductance | gFS | | 9 | | S | VDS = –4.5 V, ID = –2 A | 2 |
| Input Capacitance | Ciss | | 779 | | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 121 | | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 56 | | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Gate-Source Charge | Qgs | | 1.7 | | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 |
| Gate-Drain Charge | Qgd | | 1.5 | | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 |
## CAD (KiCad official)
- Symbol: `FDN340P`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fdn340p-etched.step` / `fdn340p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdn340p.step` / `fdn340p.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187176194789376) (5 pp, sha256 `9f3e94c007a87808`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdn340p-datasheet.pdf)