component
FDN340P
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
fdn340p: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ FDN340P from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | -20 | V | | 1 |+| Gate-Source Voltage | VGSS | -8 | | 8 | V | | 1 |+| Drain Current - Continuous | ID | | | -2 | A | Note 1a | 1 |+| Drain Current - Pulsed | ID | | | -10 | A | Pulsed | 1 |+| Power Dissipation for Single Operation | PD | | | 0.5 | W | Note 1a | 1 |+| Power Dissipation for Single Operation | PD | | | 0.46 | W | Note 1b | 1 |+| Operating and Storage Junction Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 250 | °C/W | Note 1a | 1 |+| Thermal Resistance, Junction-to-Case | RθJC | | | 75 | °C/W | Note 1 | 1 |+| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS = 0 V, ID = –250 µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = –16 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = –16 V, VGS = 0 V, TJ=55°C | 2 |+| Gate-Body Leakage, Forward | IGSSF | | | 100 | nA | VGS = 8 V, VDS = 0 V | 2 |+| Gate-Body Leakage, Reverse | IGSSR | | | -100 | nA | VGS = –8 V, VDS = 0 V | 2 |+| Gate Threshold Voltage | VGS(th) | -0.4 | -0.8 | -1.5 | V | VDS = VGS, ID = –250 µA | 2 |+| Static Drain-Source On-Resistance | RDS(on) | | 60 | 70 | mΩ | VGS = –4.5 V, ID = –2 A | 2 |+| Static Drain-Source On-Resistance | RDS(on) | | 77 | 120 | mΩ | VGS = –4.5 V, ID = –2 A, TJ=125°C | 2 |+| Static Drain-Source On-Resistance | RDS(on) | | 82 | 110 | mΩ | VGS= –2.5 V, ID = –1.7A | 2 |+| On-State Drain Current | ID(on) | -5 | | | A | VGS = –4.5 V, VDS = –5 V | 2 |+| Turn-On Delay Time | td(on) | | 10 | 20 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |+| Turn-On Rise Time | tr | | 9 | 10 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 27 | 43 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |+| Turn-Off Fall Time | tf | | 11 | 20 | ns | VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω | 2 |+| Total Gate Charge | Qg | | 7.2 | 10 | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 |+| Maximum Continuous Drain-Source Diode Forward Current | IS | | | -0.42 | A | | 2 |+| Drain-Source Diode Forward Voltage | VSD | | -0.7 | -1.2 | V | VGS = 0 V, IS = –0.42 A (Note 2) | 2 |+| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | | -12 | | mV/°C | ID = –250 µA, Referenced to 25°C | 2 |+| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | | 3 | | mV/°C | ID = –250 µA, Referenced to 25°C | 2 |+| Forward Transconductance | gFS | | 9 | | S | VDS = –4.5 V, ID = –2 A | 2 |+| Input Capacitance | Ciss | | 779 | | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 |+| Output Capacitance | Coss | | 121 | | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 56 | | pF | VDS = –10 V, VGS = 0 V, f = 1.0 MHz | 2 |+| Gate-Source Charge | Qgs | | 1.7 | | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 |+| Gate-Drain Charge | Qgd | | 1.5 | | nC | VDS = –10V, ID = –3.5 A, VGS = –4.5 V | 2 |+ ## CAD (KiCad official) - Symbol: `FDN340P`
page.json+416−1@@ -151,6 +151,421 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9f3e94c007a87808",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2,+ "conditions": "Note 1a",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Pulsed",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "Pulsed",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "Note 1a",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.46,+ "conditions": "Note 1b",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "Note 1a",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = –250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = –16 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VDS = –16 V, VGS = 0 V, TJ=55°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage, Forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 8 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage, Reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = –8 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": -0.8,+ "max": -1.5,+ "conditions": "VDS = VGS, ID = –250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 60,+ "max": 70,+ "conditions": "VGS = –4.5 V, ID = –2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 77,+ "max": 120,+ "conditions": "VGS = –4.5 V, ID = –2 A, TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 82,+ "max": 110,+ "conditions": "VGS= –2.5 V, ID = –1.7A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "VGS = –4.5 V, VDS = –5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 10,+ "conditions": "VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 27,+ "max": 43,+ "conditions": "VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 20,+ "conditions": "VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7.2,+ "max": 10,+ "conditions": "VDS = –10V, ID = –3.5 A, VGS = –4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain-Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.42,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.7,+ "max": -1.2,+ "conditions": "VGS = 0 V, IS = –0.42 A (Note 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temperature Coefficient",+ "symbol": "∆BVDSS/∆TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": -12,+ "max": null,+ "conditions": "ID = –250 µA, Referenced to 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage Temperature Coefficient",+ "symbol": "∆VGS(th)/∆TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "ID = –250 µA, Referenced to 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "VDS = –4.5 V, ID = –2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 779,+ "max": null,+ "conditions": "VDS = –10 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 121,+ "max": null,+ "conditions": "VDS = –10 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 56,+ "max": null,+ "conditions": "VDS = –10 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.7,+ "max": null,+ "conditions": "VDS = –10V, ID = –3.5 A, VGS = –4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.5,+ "max": null,+ "conditions": "VDS = –10V, ID = –3.5 A, VGS = –4.5 V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +607,4 @@ "visibility": { "public": true }-}+}