component
FDG6322C
Public Made by Adomby adom
onsemi MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
FDG6322C
onsemi · MOSFETs · SC-70-6
FDG6322C from onsemi, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of transistor Q1, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
| 2 | G1 | input | Gate of transistor Q1 with an integrated gate-source Zener for ESD protection (6 kV HBM), gate-source limit 8 V. |
| 3 | D2 | passive | Drain of transistor Q2, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
| 4 | S2 | passive | Source of transistor Q2, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
| 5 | G2 | input | Gate of transistor Q2 with an integrated gate-source Zener for ESD protection (6 kV HBM), gate-source limit 8 V. |
| 6 | D1 | passive | Drain of transistor Q1, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDSS | 25 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDSS | -25 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGSS | 8 | V | 1 | |||
| Gate-Source Voltage (P-Channel) | VGSS | -8 | V | 1 | |||
| Drain Current - Continuous (N-Channel) | ID | 0.22 | A | 1 | |||
| Drain Current - Continuous (P-Channel) | ID | -0.41 | A | 1 | |||
| Drain Current - Pulsed (N-Channel) | ID | 0.65 | A | Pulsed | 1 | ||
| Drain Current - Pulsed (P-Channel) | ID | -1.2 | A | Pulsed | 1 | ||
| Maximum Power Dissipation (Note 1) | PD | 0.3 | W | 1 | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Electrostatic Discharge Rating (Human Body Model) | ESD | 6 | kV | Human Body Model (100pF / 1500 Ohm), MIL-STD-883D | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note1) | RθJA | 415 | °C/W | Note 1: minimum mounting pad on FR-4 board, still air | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 25 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -25 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 10 | µA | TJ = 55°C | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -10 | µA | TJ = 55°C | 2 | ||
| Gate-Body Leakage Current (N-Channel) | IGSS | 100 | nA | VGS = 8 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current (P-Channel) | IGSS | -100 | nA | VGS = -8 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.65 | 0.85 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.65 | -0.82 | -1.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 2.6 | 4 | Ω | VGS = 4.5 V, ID = 0.22 A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 5.3 | 7 | Ω | TJ = 125°C | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 3.7 | 5 | Ω | VGS = 2.7 V, ID = 0.19 A | 2 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 0.85 | 1.1 | Ω | VGS = -4.5 V, ID = -0.41 A | 2 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 1.2 | 1.9 | Ω | TJ = 125°C | 2 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 1.15 | 1.5 | Ω | VGS = -2.7 V, ID = -0.25 A | 2 | |
| On-State Drain Current (N-Channel) | ID(ON) | 0.22 | A | VGS = 4.5 V, VDS = 5 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(ON) | -0.41 | A | VGS = -4.5 V, VDS = -5 V | 2 | ||
| Forward Transconductance (N-Channel) | gFS | 0.2 | S | VDS = 5 V, ID = 0.22 A | 2 | ||
| Forward Transconductance (P-Channel) | gFS | 0.9 | S | VDS = -5 V, ID = -0.5 A | 2 | ||
| Turn-On Delay Time (N-Channel) | tD(on) | 5 | 10 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 | |
| Turn-On Delay Time (P-Channel) | tD(on) | 7 | 15 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 | |
| Turn-On Rise Time (N-Channel) | tr | 4.5 | 10 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 | |
| Turn-On Rise Time (P-Channel) | tr | 8 | 16 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 | |
| Turn-Off Delay Time (N-Channel) | tD(off) | 4 | 8 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 | |
| Turn-Off Delay Time (P-Channel) | tD(off) | 55 | 80 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 | |
| Turn-Off Fall Time (N-Channel) | tf | 3.2 | 7 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 | |
| Turn-Off Fall Time (P-Channel) | tf | 35 | 60 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 | |
| Total Gate Charge (N-Channel) | Qg | 0.29 | 0.4 | nC | VDS = 5 V, ID = 0.22 A, VGS = 4.5 V | 3 | |
| Total Gate Charge (P-Channel) | Qg | 1.1 | 1.5 | nC | VDS = -5 V, ID = -0.41 A, VGS = -4.5 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current (N-Channel) | IS | 0.25 | A | 3 | |||
| Maximum Continuous Drain-Source Diode Forward Current (P-Channel) | IS | -0.25 | A | 3 | |||
| Drain-Source Diode Forward Voltage (N-Channel) | VSD | 0.8 | 1.2 | V | VGS = 0 V, IS = 0.5 A (Note 2) | 3 | |
| Drain-Source Diode Forward Voltage (P-Channel) | VSD | -0.85 | -1.2 | V | VGS = 0 V, IS = -0.5 A (Note 2) | 3 |
CAD (KiCad official)
- Symbol:
FDG6322C - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files:
fdg6322c-etched.step/fdg6322c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdg6322c.step/fdg6322c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
77b8ed9815bdc4fa, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDG6322C
**onsemi** · MOSFETs · SC-70-6
FDG6322C from onsemi, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of transistor Q1, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
| 2 | G1 | input | Gate of transistor Q1 with an integrated gate-source Zener for ESD protection (6 kV HBM), gate-source limit 8 V. |
| 3 | D2 | passive | Drain of transistor Q2, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
| 4 | S2 | passive | Source of transistor Q2, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
| 5 | G2 | input | Gate of transistor Q2 with an integrated gate-source Zener for ESD protection (6 kV HBM), gate-source limit 8 V. |
| 6 | D1 | passive | Drain of transistor Q1, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDSS | | | 25 | V | | 1 |
| Drain-Source Voltage (P-Channel) | VDSS | -25 | | | V | | 1 |
| Gate-Source Voltage (N-Channel) | VGSS | | | 8 | V | | 1 |
| Gate-Source Voltage (P-Channel) | VGSS | -8 | | | V | | 1 |
| Drain Current - Continuous (N-Channel) | ID | | | 0.22 | A | | 1 |
| Drain Current - Continuous (P-Channel) | ID | -0.41 | | | A | | 1 |
| Drain Current - Pulsed (N-Channel) | ID | | | 0.65 | A | Pulsed | 1 |
| Drain Current - Pulsed (P-Channel) | ID | -1.2 | | | A | Pulsed | 1 |
| Maximum Power Dissipation (Note 1) | PD | | | 0.3 | W | | 1 |
| Operating and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Electrostatic Discharge Rating (Human Body Model) | ESD | | | 6 | kV | Human Body Model (100pF / 1500 Ohm), MIL-STD-883D | 1 |
| Thermal Resistance, Junction-to-Ambient (Note1) | RθJA | | 415 | | °C/W | Note 1: minimum mounting pad on FR-4 board, still air | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 25 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -25 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | µA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 10 | µA | TJ = 55°C | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | | | µA | VDS = -20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -10 | | | µA | TJ = 55°C | 2 |
| Gate-Body Leakage Current (N-Channel) | IGSS | | | 100 | nA | VGS = 8 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current (P-Channel) | IGSS | -100 | | | nA | VGS = -8 V, VDS = 0 V | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.65 | 0.85 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.65 | -0.82 | -1.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | | 2.6 | 4 | Ω | VGS = 4.5 V, ID = 0.22 A | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | | 5.3 | 7 | Ω | TJ = 125°C | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | | 3.7 | 5 | Ω | VGS = 2.7 V, ID = 0.19 A | 2 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | | 0.85 | 1.1 | Ω | VGS = -4.5 V, ID = -0.41 A | 2 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | | 1.2 | 1.9 | Ω | TJ = 125°C | 2 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | | 1.15 | 1.5 | Ω | VGS = -2.7 V, ID = -0.25 A | 2 |
| On-State Drain Current (N-Channel) | ID(ON) | 0.22 | | | A | VGS = 4.5 V, VDS = 5 V | 2 |
| On-State Drain Current (P-Channel) | ID(ON) | -0.41 | | | A | VGS = -4.5 V, VDS = -5 V | 2 |
| Forward Transconductance (N-Channel) | gFS | 0.2 | | | S | VDS = 5 V, ID = 0.22 A | 2 |
| Forward Transconductance (P-Channel) | gFS | 0.9 | | | S | VDS = -5 V, ID = -0.5 A | 2 |
| Turn-On Delay Time (N-Channel) | tD(on) | | 5 | 10 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 |
| Turn-On Delay Time (P-Channel) | tD(on) | | 7 | 15 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 |
| Turn-On Rise Time (N-Channel) | tr | | 4.5 | 10 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 |
| Turn-On Rise Time (P-Channel) | tr | | 8 | 16 | nS | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 3 |
| Turn-Off Delay Time (N-Channel) | tD(off) | | 4 | 8 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 |
| Turn-Off Delay Time (P-Channel) | tD(off) | | 55 | 80 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 |
| Turn-Off Fall Time (N-Channel) | tf | | 3.2 | 7 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 |
| Turn-Off Fall Time (P-Channel) | tf | | 35 | 60 | nS | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω | 3 |
| Total Gate Charge (N-Channel) | Qg | | 0.29 | 0.4 | nC | VDS = 5 V, ID = 0.22 A, VGS = 4.5 V | 3 |
| Total Gate Charge (P-Channel) | Qg | | 1.1 | 1.5 | nC | VDS = -5 V, ID = -0.41 A, VGS = -4.5 V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current (N-Channel) | IS | | | 0.25 | A | | 3 |
| Maximum Continuous Drain-Source Diode Forward Current (P-Channel) | IS | -0.25 | | | A | | 3 |
| Drain-Source Diode Forward Voltage (N-Channel) | VSD | | 0.8 | 1.2 | V | VGS = 0 V, IS = 0.5 A (Note 2) | 3 |
| Drain-Source Diode Forward Voltage (P-Channel) | VSD | | -0.85 | -1.2 | V | VGS = 0 V, IS = -0.5 A (Note 2) | 3 |
## CAD (KiCad official)
- Symbol: `FDG6322C`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files: `fdg6322c-etched.step` / `fdg6322c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdg6322c.step` / `fdg6322c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588898900195889152) (9 pp, sha256 `77b8ed9815bdc4fa`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdg6322c-datasheet.pdf)