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FDG6322C

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onsemi MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDG6322C

onsemi · MOSFETs · SC-70-6

FDG6322C from onsemi, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of transistor Q1, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table.
2 G1 input Gate of transistor Q1 with an integrated gate-source Zener for ESD protection (6 kV HBM), gate-source limit 8 V.
3 D2 passive Drain of transistor Q2, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table.
4 S2 passive Source of transistor Q2, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table.
5 G2 input Gate of transistor Q2 with an integrated gate-source Zener for ESD protection (6 kV HBM), gate-source limit 8 V.
6 D1 passive Drain of transistor Q1, rated for drain-source voltage up to 25 V (N-channel) / -25 V (P-channel) per the ratings table.

Key specifications

Parameter Value
Manufacturer onsemi
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDSS 25 V 1
Drain-Source Voltage (P-Channel) VDSS -25 V 1
Gate-Source Voltage (N-Channel) VGSS 8 V 1
Gate-Source Voltage (P-Channel) VGSS -8 V 1
Drain Current - Continuous (N-Channel) ID 0.22 A 1
Drain Current - Continuous (P-Channel) ID -0.41 A 1
Drain Current - Pulsed (N-Channel) ID 0.65 A Pulsed 1
Drain Current - Pulsed (P-Channel) ID -1.2 A Pulsed 1
Maximum Power Dissipation (Note 1) PD 0.3 W 1
Operating and Storage Temperature Range TJ,TSTG -55 150 °C 1
Electrostatic Discharge Rating (Human Body Model) ESD 6 kV Human Body Model (100pF / 1500 Ohm), MIL-STD-883D 1
Thermal Resistance, Junction-to-Ambient (Note1) RθJA 415 °C/W Note 1: minimum mounting pad on FR-4 board, still air 1
Drain-Source Breakdown Voltage (N-Channel) BVDSS 25 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-Channel) BVDSS -25 V VGS = 0 V, ID = -250 µA 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 10 µA TJ = 55°C 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -10 µA TJ = 55°C 2
Gate-Body Leakage Current (N-Channel) IGSS 100 nA VGS = 8 V, VDS = 0 V 2
Gate-Body Leakage Current (P-Channel) IGSS -100 nA VGS = -8 V, VDS = 0 V 2
Gate Threshold Voltage (N-Channel) VGS(th) 0.65 0.85 1.5 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Channel) VGS(th) -0.65 -0.82 -1.5 V VDS = VGS, ID = -250 µA 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 2.6 4 Ω VGS = 4.5 V, ID = 0.22 A 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 5.3 7 Ω TJ = 125°C 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 3.7 5 Ω VGS = 2.7 V, ID = 0.19 A 2
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 0.85 1.1 Ω VGS = -4.5 V, ID = -0.41 A 2
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 1.2 1.9 Ω TJ = 125°C 2
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 1.15 1.5 Ω VGS = -2.7 V, ID = -0.25 A 2
On-State Drain Current (N-Channel) ID(ON) 0.22 A VGS = 4.5 V, VDS = 5 V 2
On-State Drain Current (P-Channel) ID(ON) -0.41 A VGS = -4.5 V, VDS = -5 V 2
Forward Transconductance (N-Channel) gFS 0.2 S VDS = 5 V, ID = 0.22 A 2
Forward Transconductance (P-Channel) gFS 0.9 S VDS = -5 V, ID = -0.5 A 2
Turn-On Delay Time (N-Channel) tD(on) 5 10 nS VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3
Turn-On Delay Time (P-Channel) tD(on) 7 15 nS VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3
Turn-On Rise Time (N-Channel) tr 4.5 10 nS VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3
Turn-On Rise Time (P-Channel) tr 8 16 nS VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3
Turn-Off Delay Time (N-Channel) tD(off) 4 8 nS VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω 3
Turn-Off Delay Time (P-Channel) tD(off) 55 80 nS VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω 3
Turn-Off Fall Time (N-Channel) tf 3.2 7 nS VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω 3
Turn-Off Fall Time (P-Channel) tf 35 60 nS VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω 3
Total Gate Charge (N-Channel) Qg 0.29 0.4 nC VDS = 5 V, ID = 0.22 A, VGS = 4.5 V 3
Total Gate Charge (P-Channel) Qg 1.1 1.5 nC VDS = -5 V, ID = -0.41 A, VGS = -4.5 V 3
Maximum Continuous Drain-Source Diode Forward Current (N-Channel) IS 0.25 A 3
Maximum Continuous Drain-Source Diode Forward Current (P-Channel) IS -0.25 A 3
Drain-Source Diode Forward Voltage (N-Channel) VSD 0.8 1.2 V VGS = 0 V, IS = 0.5 A (Note 2) 3
Drain-Source Diode Forward Voltage (P-Channel) VSD -0.85 -1.2 V VGS = 0 V, IS = -0.5 A (Note 2) 3

CAD (KiCad official)

  • Symbol: FDG6322C
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: fdg6322c-etched.step / fdg6322c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdg6322c.step / fdg6322c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 77b8ed9815bdc4fa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF