FDD6796A

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  "slug": "fdd6796a",
  "title": "FDD6796A",
  "brief": "UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "FDD6796A",
    "manufacturer": "UMW",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755876106505195520",
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "quota"
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "GATE terminal; the datasheet rates the gate-to-source voltage VGS at ±20 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "DRAIN terminal; the drain-to-source voltage VDS is rated at 25 V, and the drain is the thermal reference (drain tab) for RθJC and RθJA."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "SOURCE terminal; this is the source of the 25 V N-channel MOSFET, with the drain-to-source limit VDS of 25 V applying between D and S."
      }
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          "extractor flagged: Pin numbers and names come from the 'Pinning information' table on page 1 (1=G, 2=D, 3=S). The TO-25; The Absolute Maximum Ratings table has ambiguous column alignment for ID and PD values (for example,"
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        "described": 3,
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    "specs": {
      "Manufacturer": "UMW",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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        {
          "name": "Single Pulse Avalanche Energy",
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          "unit": "mJ",
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          "conditions": "Note 3: TJ=25°C, L=1mH, IAS=9A, VDD=23V, VGS=10V",
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        {
          "name": "Power Dissipation",
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          "name": "Storage Junction Temperature Range",
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        {
          "name": "Thermal Resistance, Junction to Case",
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          "name": "Thermal Resistance, Junction to Ambient",
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          "name": "Drain-Source Breakdown Voltage",
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          "name": "Gate to Source Leakage Current",
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        {
          "name": "Gate to Source Threshold Voltage",
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        {
          "name": "Gate to Source Threshold Voltage Temperature Coefficient",
          "symbol": "∆VGS(th)/∆TJ",
          "kind": "temperature_coefficient",
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          "name": "Breakdown Voltage Temperature Coefficient",
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        {
          "name": "Forward Transconductance",
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          "name": "Input Capacitance",
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          "name": "Reverse Transfer Capacitance",
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          "name": "Gate Resistance",
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          "unit": "Ω",
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        {
          "name": "Turn-On Delay Time",
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          "kind": "timing",
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          "min": null,
          "typ": 8,
          "max": 16,
          "conditions": "VDD=13V, ID=20A, VGS=10V, RGEN=6Ω",
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          "name": "Rise Time",
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          "kind": "timing",
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          "min": null,
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          "conditions": "VDD=13V, ID=20A, VGS=10V, RGEN=6Ω",
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          "name": "Turn-Off Delay Time",
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          "name": "Fall Time",
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          "kind": "timing",
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          "name": "Total Gate Charge",
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          "name": "Gate to Source Gate Charge",
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          "name": "Gate to Drain Miller Charge",
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        {
          "name": "Static Drain to Source On Resistance",
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