component
FDD6796A
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD6796A
UMW · MOSFETs · TO-252
FDD6796A from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet rates the gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal; the drain-to-source voltage VDS is rated at 25 V, and the drain is the thermal reference (drain tab) for RθJC and RθJA. |
| 3 | S | passive | SOURCE terminal; this is the source of the 25 V N-channel MOSFET, with the drain-to-source limit VDS of 25 V applying between D and S. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 25 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current -Continuous (Package limited) | ID | 40 | A | TC=25°C | 1 | ||
| Drain Current -Continuous (Silicon limited) | ID | 67 | A | TC=25°C | 1 | ||
| Drain Current -Continuous | ID | 20 | A | TA=25°C (Note 1a) | 1 | ||
| Drain Current -Pulsed | IDM | 150 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 40 | mJ | Note 3: TJ=25°C, L=1mH, IAS=9A, VDD=23V, VGS=10V | 1 | ||
| Power Dissipation | PD | 42 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 3.7 | W | TA=25°C (Note 1a) | 1 | ||
| Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.6 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | Note 1a: mounted on 1 in² pad of 2oz copper | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 25 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1.9 | 3 | V | VDS=VGS, ID=250µA | 3 | |
| Gate to Source Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | -6 | mV/°C | ID=250µA, referenced to 25°C | 3 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | 16 | mV/°C | ID=250µA, referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 118 | S | VDS=5V, ID=20A | 3 | ||
| Input Capacitance | Ciss | 1336 | 1780 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 298 | 400 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 266 | 400 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Gate Resistance | Rg | 1.2 | Ω | f=1MHz | 3 | ||
| Turn-On Delay Time | tD(on) | 8 | 16 | ns | VDD=13V, ID=20A, VGS=10V, RGEN=6Ω | 3 | |
| Rise Time | tr | 7 | 14 | ns | VDD=13V, ID=20A, VGS=10V, RGEN=6Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 19 | 34 | ns | VDD=13V, ID=20A, VGS=10V, RGEN=6Ω | 3 | |
| Fall Time | tf | 4 | 10 | ns | VDD=13V, ID=20A, VGS=10V, RGEN=6Ω | 3 | |
| Total Gate Charge | Qg | 24 | 34 | nC | VDD=13V, ID=20A, VGS=0V to 10V | 3 | |
| Total Gate Charge | Qg | 14 | 20 | nC | VDD=13V, ID=20A, VGS=0V to 5V | 3 | |
| Gate to Source Gate Charge | Qgs | 4 | nC | VDD=13V, ID=20A | 3 | ||
| Gate to Drain Miller Charge | Qgd | 5.7 | nC | VDD=13V, ID=20A | 3 | ||
| Static Drain to Source On Resistance | RDS(ON) | 4.3 | 5.7 | mΩ | VGS=10V, ID=20A | 3 | |
| Static Drain to Source On Resistance | RDS(ON) | 11.1 | 15 | mΩ | VGS=4.5V, ID=15.2A | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V, IS=3.1A (Note 2) | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.9 | 1.3 | V | VGS=0V, IS=20A (Note 2) | 3 | |
| Reverse Recovery Time | trr | 15 | 27 | ns | IF=20A, di/dt=100A/µs | 3 | |
| Reverse Recovery Charge | Qrr | 4 | 10 | nC | IF=20A, di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
FDD6796A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd6796a-etched.step/fdd6796a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd6796a.step/fdd6796a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
696cfa553daeeec4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).