component
FDD6776A
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
FDD6776A
UMW · MOSFETs · TO-252
FDD6776A from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the MOSFET; the datasheet rates gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal of the MOSFET; the datasheet rates drain-to-source voltage VDS at 25 V. |
| 3 | S | passive | SOURCE terminal of the MOSFET; it is the reference for the VGS and VDS ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 25 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current -Continuous (Package limited) | ID | 30 | A | TC=25°C | 1 | ||
| Drain Current -Continuous (Silicon limited) | ID | 54 | A | TC=25°C | 1 | ||
| Drain Current -Continuous | ID | 17.7 | A | TA=25°C (Note 1a) | 1 | ||
| Drain Current -Pulsed | ID | 100 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 32 | mJ | (Note 3) | 1 | ||
| Power Dissipation | PD | 39 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 3.7 | W | TA=25°C (Note 1a) | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 25 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1.9 | 3 | V | VDS=VGS, ID=250µA | 3 | |
| Static Drain to Source On Resistance | RDS(ON) | 5.8 | 7.5 | mΩ | VGS=10V, ID=17.7A | 3 | |
| Static Drain to Source On Resistance | RDS(ON) | 12.6 | 17 | mΩ | VGS=4.5V, ID=13.2A | 3 | |
| Input Capacitance | Ciss | 1120 | 1490 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 238 | 320 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 221 | 335 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 8 | 16 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 | |
| Rise Time | tr | 5 | 10 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 18 | 33 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 | |
| Fall Time | tf | 3 | 10 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 | |
| Total Gate Charge | Qg | 20 | 29 | nC | VDD=13V, ID=17.7A, VGS=0V to 10V | 3 | |
| Total Gate Charge | Qg | 12 | 17 | nC | VDD=13V, ID=17.7A, VGS=0V to 5V | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V, IS=3.1A (Note 2) | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.9 | 1.3 | V | VGS=0V, IS=17.7A (Note 2) | 3 | |
| Reverse Recovery Time | trr | 17 | 31 | ns | IF=17.7A, di/dt=100A/µs | 3 | |
| Reverse Recovery Charge | Qrr | 5 | 10 | nC | IF=17.7A, di/dt=100A/µs | 3 | |
| Thermal Resistance, Junction to Case | RθJC | 3.8 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | (Note 1a) | 2 | ||
| Gate Resistance | Rg | 0.9 | Ω | 3 | |||
| Gate to Source Gate Charge | Qgs | 3.5 | nC | VDD=13V, ID=17.7A | 3 | ||
| Gate to Drain Miller Charge | Qgd | 4.9 | nC | VDD=13V, ID=17.7A | 3 | ||
| Forward Transconductance | gFS | 84 | S | VDS=5V, ID=17.7A | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 16 | mV/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | -6 | mV/°C | ID=250µA, Referenced to 25°C | 3 |
CAD (KiCad official)
- Symbol:
FDD6776A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd6776a-etched.step/fdd6776a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd6776a.step/fdd6776a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
b48d0cbeb4b32d19, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDD6776A
**UMW** · MOSFETs · TO-252
FDD6776A from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the MOSFET; the datasheet rates gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal of the MOSFET; the datasheet rates drain-to-source voltage VDS at 25 V. |
| 3 | S | passive | SOURCE terminal of the MOSFET; it is the reference for the VGS and VDS ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | | | 25 | V | | 1 |
| Gate to Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current -Continuous (Package limited) | ID | | | 30 | A | TC=25°C | 1 |
| Drain Current -Continuous (Silicon limited) | ID | | | 54 | A | TC=25°C | 1 |
| Drain Current -Continuous | ID | | | 17.7 | A | TA=25°C (Note 1a) | 1 |
| Drain Current -Pulsed | ID | | | 100 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 32 | mJ | (Note 3) | 1 |
| Power Dissipation | PD | | | 39 | W | TC=25°C | 1 |
| Power Dissipation | PD | | | 3.7 | W | TA=25°C (Note 1a) | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 25 | | | V | ID=250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=20V, VGS=0V | 3 |
| Gate to Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | | 1.9 | 3 | V | VDS=VGS, ID=250µA | 3 |
| Static Drain to Source On Resistance | RDS(ON) | | 5.8 | 7.5 | mΩ | VGS=10V, ID=17.7A | 3 |
| Static Drain to Source On Resistance | RDS(ON) | | 12.6 | 17 | mΩ | VGS=4.5V, ID=13.2A | 3 |
| Input Capacitance | Ciss | | 1120 | 1490 | pF | VDS=13V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss | | 238 | 320 | pF | VDS=13V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 221 | 335 | pF | VDS=13V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) | | 8 | 16 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 |
| Rise Time | tr | | 5 | 10 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 |
| Turn-Off Delay Time | tD(off) | | 18 | 33 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 |
| Fall Time | tf | | 3 | 10 | ns | VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω | 3 |
| Total Gate Charge | Qg | | 20 | 29 | nC | VDD=13V, ID=17.7A, VGS=0V to 10V | 3 |
| Total Gate Charge | Qg | | 12 | 17 | nC | VDD=13V, ID=17.7A, VGS=0V to 5V | 3 |
| Source to Drain Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS=0V, IS=3.1A (Note 2) | 3 |
| Source to Drain Diode Forward Voltage | VSD | | 0.9 | 1.3 | V | VGS=0V, IS=17.7A (Note 2) | 3 |
| Reverse Recovery Time | trr | | 17 | 31 | ns | IF=17.7A, di/dt=100A/µs | 3 |
| Reverse Recovery Charge | Qrr | | 5 | 10 | nC | IF=17.7A, di/dt=100A/µs | 3 |
| Thermal Resistance, Junction to Case | RθJC | | | 3.8 | °C/W | | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 40 | °C/W | (Note 1a) | 2 |
| Gate Resistance | Rg | | 0.9 | | Ω | | 3 |
| Gate to Source Gate Charge | Qgs | | 3.5 | | nC | VDD=13V, ID=17.7A | 3 |
| Gate to Drain Miller Charge | Qgd | | 4.9 | | nC | VDD=13V, ID=17.7A | 3 |
| Forward Transconductance | gFS | | 84 | | S | VDS=5V, ID=17.7A | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 16 | | mV/°C | ID=250µA, Referenced to 25°C | 3 |
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | | -6 | | mV/°C | ID=250µA, Referenced to 25°C | 3 |
## CAD (KiCad official)
- Symbol: `FDD6776A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fdd6776a-etched.step` / `fdd6776a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd6776a.step` / `fdd6776a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755876122125053952) (9 pp, sha256 `b48d0cbeb4b32d19`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdd6776a-datasheet.pdf)