component

FDD6776A

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfdd6776afactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers fdd6776a: viewers · Ray 17d ago
fdd6776a-etched.glb Publish 0.1.0 · Ray 17d ago
fdd6776a-etched.step fdd6776a: factory component page (tier=lcsc) · Ray 17d ago
fdd6776a-hero.glb fdd6776a: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
fdd6776a-hero.overlay.json Publish 0.1.0 · Ray 17d ago
fdd6776a.glb Publish 0.1.0 · Ray 17d ago
fdd6776a.kicad_mod Publish 0.1.0 · Ray 17d ago
fdd6776a.kicad_sym Publish 0.1.0 · Ray 17d ago
fdd6776a.lbr Publish 0.1.0 · Ray 17d ago
fdd6776a.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

FDD6776A

UMW · MOSFETs · TO-252

FDD6776A from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the MOSFET; the datasheet rates gate-to-source voltage VGS at ±20 V.
2 D passive DRAIN terminal of the MOSFET; the datasheet rates drain-to-source voltage VDS at 25 V.
3 S passive SOURCE terminal of the MOSFET; it is the reference for the VGS and VDS ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDS 25 V 1
Gate to Source Voltage VGS -20 20 V 1
Drain Current -Continuous (Package limited) ID 30 A TC=25°C 1
Drain Current -Continuous (Silicon limited) ID 54 A TC=25°C 1
Drain Current -Continuous ID 17.7 A TA=25°C (Note 1a) 1
Drain Current -Pulsed ID 100 A 1
Single Pulse Avalanche Energy EAS 32 mJ (Note 3) 1
Power Dissipation PD 39 W TC=25°C 1
Power Dissipation PD 3.7 W TA=25°C (Note 1a) 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 175 °C 1
Drain-Source Breakdown Voltage BVDSS 25 V ID=250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V 3
Gate to Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate to Source Threshold Voltage VGS(th) 1.9 3 V VDS=VGS, ID=250µA 3
Static Drain to Source On Resistance RDS(ON) 5.8 7.5 mΩ VGS=10V, ID=17.7A 3
Static Drain to Source On Resistance RDS(ON) 12.6 17 mΩ VGS=4.5V, ID=13.2A 3
Input Capacitance Ciss 1120 1490 pF VDS=13V, VGS=0V, f=1MHz 3
Output Capacitance Coss 238 320 pF VDS=13V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 221 335 pF VDS=13V, VGS=0V, f=1MHz 3
Turn-On Delay Time tD(on) 8 16 ns VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω 3
Rise Time tr 5 10 ns VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω 3
Turn-Off Delay Time tD(off) 18 33 ns VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω 3
Fall Time tf 3 10 ns VDD=13V, ID=17.7A, VGS=10V, RGEN=6Ω 3
Total Gate Charge Qg 20 29 nC VDD=13V, ID=17.7A, VGS=0V to 10V 3
Total Gate Charge Qg 12 17 nC VDD=13V, ID=17.7A, VGS=0V to 5V 3
Source to Drain Diode Forward Voltage VSD 0.8 1.2 V VGS=0V, IS=3.1A (Note 2) 3
Source to Drain Diode Forward Voltage VSD 0.9 1.3 V VGS=0V, IS=17.7A (Note 2) 3
Reverse Recovery Time trr 17 31 ns IF=17.7A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 5 10 nC IF=17.7A, di/dt=100A/µs 3
Thermal Resistance, Junction to Case RθJC 3.8 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 40 °C/W (Note 1a) 2
Gate Resistance Rg 0.9 Ω 3
Gate to Source Gate Charge Qgs 3.5 nC VDD=13V, ID=17.7A 3
Gate to Drain Miller Charge Qgd 4.9 nC VDD=13V, ID=17.7A 3
Forward Transconductance gFS 84 S VDS=5V, ID=17.7A 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 16 mV/°C ID=250µA, Referenced to 25°C 3
Gate to Source Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ -6 mV/°C ID=250µA, Referenced to 25°C 3

CAD (KiCad official)

  • Symbol: FDD6776A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fdd6776a-etched.step / fdd6776a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdd6776a.step / fdd6776a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 b48d0cbeb4b32d19, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF