# FDD4141

**UMW** · MOSFETs · TO-252

FDD4141 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the gate-to-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal; the drain-to-source voltage is rated -40 V (VDS), and the drain is the solder mounting surface referenced for the thermal resistance RθJA. |
| 3 | S | passive | SOURCE terminal; it is the reference for VGS and the source-to-drain body diode, whose forward voltage VSD is given in the Drain-Source Diode Characteristics table. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | -40 |  |  | V |  | 1 |
| Gate to Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current -Continuous (Package limited) | ID | -50 |  |  | A | TC=25°C | 1 |
| Drain Current -Continuous (Silicon limited) | ID | -58 |  |  | A | TC=25°C | 1 |
| Drain Current -Continuous | ID | -10.8 |  |  | A | TA=25°C (Note 1a) | 1 |
| Drain Current -Pulsed | ID | -100 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 337 | mJ | Starting TJ=25°C, L=3mH, IAS=15A, VDD=40V, VGS=10V (Note 3) | 1 |
| Power Dissipation | PD |  |  | 69 | W | TC=25°C | 1 |
| Power Dissipation | PD |  |  | 2.4 | W | TA=25°C (Note 1a) | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 1.8 | °C/W |  | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 52 | °C/W | (Note 1a) | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | ID=-250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-32V | 3 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS, ID=-250µA | 3 |
| Static Drain to Source On Resistance (VGS=-10V) | RDS(ON) |  | 10.1 | 12.3 | mΩ | VGS=-10V, ID=-12.7A | 3 |
| Static Drain to Source On Resistance (VGS=-4.5V) | RDS(ON) |  | 14.5 | 18 | mΩ | VGS=-4.5V, ID=-10.4A | 3 |
| Input Capacitance | Ciss |  | 2085 | 2775 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss |  | 360 | 480 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 210 | 310 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) |  | 10 | 19 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 |
| Rise Time | tr |  | 7 | 13 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 |
| Turn-Off Delay Time | tD(off) |  | 38 | 60 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 |
| Fall Time | tf |  | 15 | 27 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 |
| Total Gate Charge | Qg |  | 36 | 50 | nC | VDD=-20V, ID=-12.7A, VGS=0V to -10V | 3 |
| Total Gate Charge | Qg |  | 19 | 27 | nC | VDD=-20V, ID=-12.7A, VGS=0V to -5V | 3 |
| Source to Drain Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS=-12.7A (Note 2) | 4 |
| Reverse Recovery Time | trr |  | 29 | 44 | ns | IF=-12.7A, di/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr |  | 26 | 40 | nC | IF=-12.7A, di/dt=100A/µs | 4 |
| Forward Transconductance | gFS |  | 38 |  | S | VDS=-5V, ID=-12.7A | 3 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ |  | -29 |  | mV/°C | ID=-250µA, Referenced to 25°C | 3 |
| Gate to Source Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ |  | 5.8 |  | mV/°C | ID=-250µA, Referenced to 25°C | 3 |
| Gate Resistance | Rg |  | 4.6 |  | Ω | f=1MHz | 3 |
| Gate to Source Charge | Qgs |  | 7 |  | nC | VDD=-20V, ID=-12.7A | 3 |
| Gate to Drain "Miller" Charge | Qgd |  | 8 |  | nC | VDD=-20V, ID=-12.7A | 3 |

## CAD (KiCad official)

- Symbol: `FDD4141`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fdd4141-etched.step` / `fdd4141-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd4141.step` / `fdd4141.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755877438775934976) (10 pp, sha256 `1e315c4c1b321315`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fdd4141-datasheet.pdf)