component
FDD4141
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD4141
UMW · MOSFETs · TO-252
FDD4141 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the gate-to-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal; the drain-to-source voltage is rated -40 V (VDS), and the drain is the solder mounting surface referenced for the thermal resistance RθJA. |
| 3 | S | passive | SOURCE terminal; it is the reference for VGS and the source-to-drain body diode, whose forward voltage VSD is given in the Drain-Source Diode Characteristics table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | -40 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current -Continuous (Package limited) | ID | -50 | A | TC=25°C | 1 | ||
| Drain Current -Continuous (Silicon limited) | ID | -58 | A | TC=25°C | 1 | ||
| Drain Current -Continuous | ID | -10.8 | A | TA=25°C (Note 1a) | 1 | ||
| Drain Current -Pulsed | ID | -100 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 337 | mJ | Starting TJ=25°C, L=3mH, IAS=15A, VDD=40V, VGS=10V (Note 3) | 1 | ||
| Power Dissipation | PD | 69 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 2.4 | W | TA=25°C (Note 1a) | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.8 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 52 | °C/W | (Note 1a) | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | ID=-250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-32V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS, ID=-250µA | 3 |
| Static Drain to Source On Resistance (VGS=-10V) | RDS(ON) | 10.1 | 12.3 | mΩ | VGS=-10V, ID=-12.7A | 3 | |
| Static Drain to Source On Resistance (VGS=-4.5V) | RDS(ON) | 14.5 | 18 | mΩ | VGS=-4.5V, ID=-10.4A | 3 | |
| Input Capacitance | Ciss | 2085 | 2775 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 360 | 480 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 210 | 310 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 10 | 19 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 | |
| Rise Time | tr | 7 | 13 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 38 | 60 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 | |
| Fall Time | tf | 15 | 27 | ns | VDD=-20V, ID=-12.7A, VGS=-10V, RGEN=6Ω | 3 | |
| Total Gate Charge | Qg | 36 | 50 | nC | VDD=-20V, ID=-12.7A, VGS=0V to -10V | 3 | |
| Total Gate Charge | Qg | 19 | 27 | nC | VDD=-20V, ID=-12.7A, VGS=0V to -5V | 3 | |
| Source to Drain Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-12.7A (Note 2) | 4 | |
| Reverse Recovery Time | trr | 29 | 44 | ns | IF=-12.7A, di/dt=100A/µs | 4 | |
| Reverse Recovery Charge | Qrr | 26 | 40 | nC | IF=-12.7A, di/dt=100A/µs | 4 | |
| Forward Transconductance | gFS | 38 | S | VDS=-5V, ID=-12.7A | 3 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | -29 | mV/°C | ID=-250µA, Referenced to 25°C | 3 | ||
| Gate to Source Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | 5.8 | mV/°C | ID=-250µA, Referenced to 25°C | 3 | ||
| Gate Resistance | Rg | 4.6 | Ω | f=1MHz | 3 | ||
| Gate to Source Charge | Qgs | 7 | nC | VDD=-20V, ID=-12.7A | 3 | ||
| Gate to Drain "Miller" Charge | Qgd | 8 | nC | VDD=-20V, ID=-12.7A | 3 |
CAD (KiCad official)
- Symbol:
FDD4141 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd4141-etched.step/fdd4141-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd4141.step/fdd4141.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
1e315c4c1b321315, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).