# FDC640PA

**TWGMC** · MOSFETs · SOT-23-6

FDC640PA from TWGMC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃. |
| 2 | D | passive | Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃. |
| 3 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±12V. |
| 4 | S | passive | Source terminal of the MOSFET; body diode continuous source current is rated -5A with VSD of -1.2V max at IS=-1A. |
| 5 | D | passive | Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃. |
| 6 | D | passive | Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current, Continuous | ID |  |  | -5 | A | TA=25℃ | 1 |
| Drain Current, Continuous | ID |  |  | -3.2 | A | TA=70℃ | 1 |
| Drain Current, Pulsed | IDM |  |  | -20 | A | Pulsed (note 1: pulse width limited by maximum junction temperature) | 1 |
| Power Dissipation | PD |  |  | 1.56 | W | TA=25℃ | 1 |
| Power Dissipation, Derate above 25℃ | PD |  |  | 0.012 | W/℃ | Derate above 25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 125 | ℃ |  | 1 |
| Thermal Resistance Junction to ambient | RθJA |  |  | 80 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -10 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 35 | 50 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 45 | 70 | mΩ | VGS=-2.5V, ID=-3A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.65 | -1.1 | V | VGS=VDS, ID=-250uA | 2 |
| Continuous Source Current | IS |  |  | -5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -10 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `FDC640PA`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `fdc640pa-etched.step` / `fdc640pa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdc640pa.step` / `fdc640pa.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TWGMC datasheet](docs/fdc640pa-datasheet.pdf) (5 pp, sha256 `6ab5e64bcecea472`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fdc640pa-datasheet.pdf)