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FDC640PA

TWGMC · MOSFETs · SOT-23-6

FDC640PA from TWGMC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃.
2 D passive Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃.
3 G input Gate terminal of the MOSFET; gate-source voltage is rated ±12V.
4 S passive Source terminal of the MOSFET; body diode continuous source current is rated -5A with VSD of -1.2V max at IS=-1A.
5 D passive Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃.
6 D passive Drain terminal of the -20V P-channel MOSFET, rated for -5A continuous drain current at TA=25℃.

Key specifications

Parameter Value
Manufacturer TWGMC
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current, Continuous ID -5 A TA=25℃ 1
Drain Current, Continuous ID -3.2 A TA=70℃ 1
Drain Current, Pulsed IDM -20 A Pulsed (note 1: pulse width limited by maximum junction temperature) 1
Power Dissipation PD 1.56 W TA=25℃ 1
Power Dissipation, Derate above 25℃ PD 0.012 W/℃ Derate above 25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 125 ℃ 1
Thermal Resistance Junction to ambient RθJA 80 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -10 uA VDS=-16V, VGS=0V, TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 35 50 mΩ VGS=-4.5V, ID=-4A 2
Static Drain-Source On-Resistance RDS(ON) 45 70 mΩ VGS=-2.5V, ID=-3A 2
Gate Threshold Voltage VGS(th) -0.5 -0.65 -1.1 V VGS=VDS, ID=-250uA 2
Continuous Source Current IS -5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -10 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: FDC640PA
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fdc640pa-etched.step / fdc640pa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc640pa.step / fdc640pa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TWGMC datasheet (5 pp, sha256 6ab5e64bcecea472, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF