# FCX458TA

**Diodes Incorporated** · Bipolar (BJT) · SOT-89

FCX458TA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the 400V NPN transistor; the emitter-base voltage is limited to VEBO 7 V and the emitter current is part of the 225 mA continuous collector current rating. |
| 2 | C | passive | Collector terminal, also electrically connected to the exposed collector pad; the continuous collector current is limited to IC 225 mA and the peak pulse current to ICM 500 mA. |
| 3 | B | passive | Base terminal; the base current is limited to IB 200 mA (absolute maximum rating). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 400 | 550 |  | V | IC = 100µA | 4 |
| Collector-Emitter Breakdown Voltage | BVCES | 400 | 550 |  | V | IC = 100µA | 4 |
| Collector-Emitter Breakdown Voltage (Note 11) | BVCEO | 400 | 450 |  | V | IC = 1mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | 8.1 |  | V | IE = 100µA | 4 |
| Collector-Base Cutoff Current | ICBO |  |  | 100 | nA | VCB = 320V | 4 |
| Collector Cutoff Current | ICES |  |  | 100 | nA | VCES = 320V | 4 |
| Emitter Cutoff Current | IEBO |  |  | 20 | nA | VEB = 6V | 4 |
| Collector-Emitter Saturation Voltage (Note 11) | VCE(sat) |  |  | 200 | mV | IC = 20mA, IB = 2mA | 4 |
| Collector-Emitter Saturation Voltage (Note 11) | VCE(sat) |  |  | 500 | mV | IC = 50mA, IB = 6mA | 4 |
| Base-Emitter Saturation Voltage (Note 11) | VBE(sat) |  |  | 900 | mV | IC = 50mA, IB = 5mA | 4 |
| Base-Emitter Turn-On Voltage (Note 11) | VBE(on) |  |  | 900 | mV | IC = 50mA, VCE = 10V | 4 |
| DC Current Gain (Note 11) | hFE | 100 |  |  |  | IC = 1mA, VCE = 10V | 4 |
| DC Current Gain (Note 11) | hFE | 15 |  |  |  | IC = 100mA, VCE = 10V | 4 |
| Transitional Frequency | fT | 50 |  |  | MHz | IC = 10mA, VCE = 20V, f = 20MHz | 4 |
| Output Capacitance | Cobo |  |  | 5 | pF | VCB = 20V, f = 1MHz | 4 |
| Collector-Base Voltage | VCBO |  |  | 400 | V | TA = +25°C | 2 |
| Collector-Emitter Voltage | VCEO |  |  | 400 | V | TA = +25°C | 2 |
| Emitter-Base Voltage | VEBO |  |  | 7 | V | TA = +25°C | 2 |
| Continuous Collector Current | IC |  |  | 225 | mA | TA = +25°C | 2 |
| Peak Pulse Current | ICM |  |  | 500 | mA | TA = +25°C | 2 |
| Base Current | IB |  |  | 200 | mA | TA = +25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -65 |  | 150 | °C |  | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM |  |  | 4000 | V | JEDEC Class 3A (JESD22-A114) | 2 |
| Electrostatic Discharge - Machine Model | ESD MM |  |  | 400 | V | JEDEC Class C (JESD22-A115) | 2 |
| Power Dissipation (MRP 1oz pad, Note 5) | PD |  |  | 0.7 | W | Note 5: exposed collector pad on minimum recommended pad layout, 1oz Cu, single-sided 1.6mm FR4, still air, steady state, TA=25°C | 2 |
| Power Dissipation (15mm x 15mm 1oz pad, Note 6) | PD |  |  | 1 | W | Note 6: as Note 5 with 15mm x 15mm 1oz Cu pad | 2 |
| Power Dissipation (25mm x 25mm 1oz pad, Note 7) | PD |  |  | 1.5 | W | Note 7: as Note 5 with 25mm x 25mm 1oz Cu pad | 2 |
| Power Dissipation (50mm x 50mm 1oz pad, Note 8) | PD |  |  | 2 | W | Note 8: as Note 5 with 50mm x 50mm 1oz Cu pad | 2 |
| Thermal Resistance, Junction to Ambient (MRP pad, Note 5) | RθJA |  | 178 |  | °C/W | Note 5: MRP 1oz pad, single-sided 1.6mm FR4, still air | 2 |
| Thermal Resistance, Junction to Ambient (15mm x 15mm pad, Note 6) | RθJA |  | 125 |  | °C/W | Note 6: 15mm x 15mm 1oz Cu pad | 2 |
| Thermal Resistance, Junction to Ambient (25mm x 25mm pad, Note 7) | RθJA |  | 83 |  | °C/W | Note 7: 25mm x 25mm 1oz Cu pad | 2 |
| Thermal Resistance, Junction to Ambient (50mm x 50mm pad, Note 8) | RθJA |  | 60 |  | °C/W | Note 8: 50mm x 50mm 1oz Cu pad | 2 |
| Thermal Resistance, Junction to Lead (Note 9) | RθJL |  | 22 |  | °C/W | Note 9: junction to solder point on exposed collector pad | 2 |

## CAD (KiCad official)

- Symbol: `FCX458TA`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `fcx458ta-etched.step` / `fcx458ta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fcx458ta.step` / `fcx458ta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907168695799808) (7 pp, sha256 `fd18381903c6ebc3`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fcx458ta-datasheet.pdf)