component

FCX458TA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 29d ago
viewers fcx458ta: viewers · Ray 29d ago
fcx458ta-etched.glb fcx458ta: factory component page (tier=lcsc) · Ray 29d ago
fcx458ta-etched.step fcx458ta: factory component page (tier=lcsc) · Ray 29d ago
fcx458ta-hero.glb fcx458ta: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
fcx458ta-hero.overlay.json Publish 0.1.0 · Ray 29d ago
fcx458ta.glb Publish 0.1.0 · Ray 29d ago
fcx458ta.kicad_mod Publish 0.1.0 · Ray 29d ago
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fcx458ta.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json fcx458ta: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 23d ago
README.md fcx458ta: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 23d ago

FCX458TA

Diodes Incorporated · Bipolar (BJT) · SOT-89

FCX458TA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the 400V NPN transistor; the emitter-base voltage is limited to VEBO 7 V and the emitter current is part of the 225 mA continuous collector current rating.
2 C passive Collector terminal, also electrically connected to the exposed collector pad; the continuous collector current is limited to IC 225 mA and the peak pulse current to ICM 500 mA.
3 B passive Base terminal; the base current is limited to IB 200 mA (absolute maximum rating).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 400 550 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCES 400 550 V IC = 100µA 4
Collector-Emitter Breakdown Voltage (Note 11) BVCEO 400 450 V IC = 1mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.1 V IE = 100µA 4
Collector-Base Cutoff Current ICBO 100 nA VCB = 320V 4
Collector Cutoff Current ICES 100 nA VCES = 320V 4
Emitter Cutoff Current IEBO 20 nA VEB = 6V 4
Collector-Emitter Saturation Voltage (Note 11) VCE(sat) 200 mV IC = 20mA, IB = 2mA 4
Collector-Emitter Saturation Voltage (Note 11) VCE(sat) 500 mV IC = 50mA, IB = 6mA 4
Base-Emitter Saturation Voltage (Note 11) VBE(sat) 900 mV IC = 50mA, IB = 5mA 4
Base-Emitter Turn-On Voltage (Note 11) VBE(on) 900 mV IC = 50mA, VCE = 10V 4
DC Current Gain (Note 11) hFE 100 IC = 1mA, VCE = 10V 4
DC Current Gain (Note 11) hFE 15 IC = 100mA, VCE = 10V 4
Transitional Frequency fT 50 MHz IC = 10mA, VCE = 20V, f = 20MHz 4
Output Capacitance Cobo 5 pF VCB = 20V, f = 1MHz 4
Collector-Base Voltage VCBO 400 V TA = +25°C 2
Collector-Emitter Voltage VCEO 400 V TA = +25°C 2
Emitter-Base Voltage VEBO 7 V TA = +25°C 2
Continuous Collector Current IC 225 mA TA = +25°C 2
Peak Pulse Current ICM 500 mA TA = +25°C 2
Base Current IB 200 mA TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A (JESD22-A114) 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C (JESD22-A115) 2
Power Dissipation (MRP 1oz pad, Note 5) PD 0.7 W Note 5: exposed collector pad on minimum recommended pad layout, 1oz Cu, single-sided 1.6mm FR4, still air, steady state, TA=25°C 2
Power Dissipation (15mm x 15mm 1oz pad, Note 6) PD 1 W Note 6: as Note 5 with 15mm x 15mm 1oz Cu pad 2
Power Dissipation (25mm x 25mm 1oz pad, Note 7) PD 1.5 W Note 7: as Note 5 with 25mm x 25mm 1oz Cu pad 2
Power Dissipation (50mm x 50mm 1oz pad, Note 8) PD 2 W Note 8: as Note 5 with 50mm x 50mm 1oz Cu pad 2
Thermal Resistance, Junction to Ambient (MRP pad, Note 5) RθJA 178 °C/W Note 5: MRP 1oz pad, single-sided 1.6mm FR4, still air 2
Thermal Resistance, Junction to Ambient (15mm x 15mm pad, Note 6) RθJA 125 °C/W Note 6: 15mm x 15mm 1oz Cu pad 2
Thermal Resistance, Junction to Ambient (25mm x 25mm pad, Note 7) RθJA 83 °C/W Note 7: 25mm x 25mm 1oz Cu pad 2
Thermal Resistance, Junction to Ambient (50mm x 50mm pad, Note 8) RθJA 60 °C/W Note 8: 50mm x 50mm 1oz Cu pad 2
Thermal Resistance, Junction to Lead (Note 9) RθJL 22 °C/W Note 9: junction to solder point on exposed collector pad 2

CAD (KiCad official)

  • Symbol: FCX458TA
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: fcx458ta-etched.step / fcx458ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fcx458ta.step / fcx458ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 fd18381903c6ebc3, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF