component
ESJ3139K
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ESJ3139K
ElecSuper · MOSFETs · SOT-23
ESJ3139K from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel enhancement MOSFET; the datasheet gives a gate-source voltage absolute maximum of ±12 V (VGS). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the datasheet gives a drain-source breakdown voltage BVDSS of -20 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the datasheet gives a continuous drain current of -0.5 A at TA=25°C (-0.4 A at TA=75°C) and a pulsed drain current IDM of -2.6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | -0.5 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -0.4 | A | TA=75°C | 2 | ||
| Maximum Power Dissipation | PD | 0.35 | W | 2 | |||
| Pulsed Drain Current | IDM | -2.6 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (single operation, t ≤ 10s) | RθJA | 357 | °C/W | t ≤ 10s | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-20V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -10 | 10 | uA | VDS=0V, VGS=±10V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.35 | -0.62 | -1.2 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 580 | 850 | mΩ | VGS=-4.5V, ID=-0.5A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 855 | 1200 | mΩ | VGS=-2.5V, ID=-0.3A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 1350 | 2000 | mΩ | VGS=-1.8V, ID=-0.2A | 3 | |
| Input Capacitance | CISS | 71 | pF | VGS=0V, f=1MHz, VDS=-10V | 3 | ||
| Output Capacitance | COSS | 20 | pF | 3 | |||
| Reverse Transfer Capacitance | CRSS | 15 | pF | 3 | |||
| Total Gate Charge | QG(TOT) | 1.25 | nC | VGS=-4.5V, VDS=-10V, ID=-0.5A | 3 | ||
| Gate-to-Source Charge | QGS | 0.38 | nC | 3 | |||
| Gate-to-Drain Charge | QGD | 0.28 | nC | 3 | |||
| Turn-On Delay Time | td(ON) | 4 | ns | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 3 | ||
| Rise Time | tr | 19 | ns | 3 | |||
| Turn-Off Delay Time | td(OFF) | 16 | ns | 3 | |||
| Fall Time | tf | 25 | ns | 3 | |||
| Forward Voltage | VSD | -1.5 | V | VGS=0V, IS=-0.5A | 3 |
CAD (KiCad official)
- Symbol:
ESJ3139K - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
esj3139k-etched.step/esj3139k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esj3139k.step/esj3139k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (7 pp, sha256
18ef093d0ed13aaa, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ESJ3139K
**ElecSuper** · MOSFETs · SOT-23
ESJ3139K from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel enhancement MOSFET; the datasheet gives a gate-source voltage absolute maximum of ±12 V (VGS). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the datasheet gives a drain-source breakdown voltage BVDSS of -20 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the datasheet gives a continuous drain current of -0.5 A at TA=25°C (-0.4 A at TA=75°C) and a pulsed drain current IDM of -2.6 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | | | -20 | V | | 2 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 2 |
| Continuous Drain Current | ID | | | -0.5 | A | TA=25°C | 2 |
| Continuous Drain Current | ID | | | -0.4 | A | TA=75°C | 2 |
| Maximum Power Dissipation | PD | | | 0.35 | W | | 2 |
| Pulsed Drain Current | IDM | | | -2.6 | A | | 2 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 2 |
| Lead Temperature | TL | | | 260 | °C | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |
| Junction-to-Ambient Thermal Resistance (single operation, t ≤ 10s) | RθJA | | | 357 | °C/W | t ≤ 10s | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS=-20V, VGS=0V | 3 |
| Gate-to-source Leakage Current | IGSS | -10 | | 10 | uA | VDS=0V, VGS=±10V | 3 |
| Gate Threshold Voltage | VGS(TH) | -0.35 | -0.62 | -1.2 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | | 580 | 850 | mΩ | VGS=-4.5V, ID=-0.5A | 3 |
| Drain-to-source On-resistance | RDS(on) | | 855 | 1200 | mΩ | VGS=-2.5V, ID=-0.3A | 3 |
| Drain-to-source On-resistance | RDS(on) | | 1350 | 2000 | mΩ | VGS=-1.8V, ID=-0.2A | 3 |
| Input Capacitance | CISS | | 71 | | pF | VGS=0V, f=1MHz, VDS=-10V | 3 |
| Output Capacitance | COSS | | 20 | | pF | | 3 |
| Reverse Transfer Capacitance | CRSS | | 15 | | pF | | 3 |
| Total Gate Charge | QG(TOT) | | 1.25 | | nC | VGS=-4.5V, VDS=-10V, ID=-0.5A | 3 |
| Gate-to-Source Charge | QGS | | 0.38 | | nC | | 3 |
| Gate-to-Drain Charge | QGD | | 0.28 | | nC | | 3 |
| Turn-On Delay Time | td(ON) | | 4 | | ns | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 3 |
| Rise Time | tr | | 19 | | ns | | 3 |
| Turn-Off Delay Time | td(OFF) | | 16 | | ns | | 3 |
| Fall Time | tf | | 25 | | ns | | 3 |
| Forward Voltage | VSD | | | -1.5 | V | VGS=0V, IS=-0.5A | 3 |
## CAD (KiCad official)
- Symbol: `ESJ3139K`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `esj3139k-etched.step` / `esj3139k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esj3139k.step` / `esj3139k.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ElecSuper datasheet](docs/esj3139k-datasheet.pdf) (7 pp, sha256 `18ef093d0ed13aaa`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/esj3139k-datasheet.pdf)