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ESJ3139K

Public Made by Adom

by adom

ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESJ3139K

ElecSuper · MOSFETs · SOT-23

ESJ3139K from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel enhancement MOSFET; the datasheet gives a gate-source voltage absolute maximum of ±12 V (VGS).
2 Source passive Source terminal of the P-channel MOSFET; the datasheet gives a drain-source breakdown voltage BVDSS of -20 V.
3 Drain passive Drain terminal of the P-channel MOSFET; the datasheet gives a continuous drain current of -0.5 A at TA=25°C (-0.4 A at TA=75°C) and a pulsed drain current IDM of -2.6 A.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -20 V 2
Gate-Source Voltage VGS -12 12 V 2
Continuous Drain Current ID -0.5 A TA=25°C 2
Continuous Drain Current ID -0.4 A TA=75°C 2
Maximum Power Dissipation PD 0.35 W 2
Pulsed Drain Current IDM -2.6 A 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance (single operation, t ≤ 10s) RθJA 357 °C/W t ≤ 10s 2
Drain-to-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 3
Zero Gate Voltage Drain Current IDSS -1 uA VDS=-20V, VGS=0V 3
Gate-to-source Leakage Current IGSS -10 10 uA VDS=0V, VGS=±10V 3
Gate Threshold Voltage VGS(TH) -0.35 -0.62 -1.2 V VGS=VDS, ID=-250uA 3
Drain-to-source On-resistance RDS(on) 580 850 mΩ VGS=-4.5V, ID=-0.5A 3
Drain-to-source On-resistance RDS(on) 855 1200 mΩ VGS=-2.5V, ID=-0.3A 3
Drain-to-source On-resistance RDS(on) 1350 2000 mΩ VGS=-1.8V, ID=-0.2A 3
Input Capacitance CISS 71 pF VGS=0V, f=1MHz, VDS=-10V 3
Output Capacitance COSS 20 pF 3
Reverse Transfer Capacitance CRSS 15 pF 3
Total Gate Charge QG(TOT) 1.25 nC VGS=-4.5V, VDS=-10V, ID=-0.5A 3
Gate-to-Source Charge QGS 0.38 nC 3
Gate-to-Drain Charge QGD 0.28 nC 3
Turn-On Delay Time td(ON) 4 ns VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω 3
Rise Time tr 19 ns 3
Turn-Off Delay Time td(OFF) 16 ns 3
Fall Time tf 25 ns 3
Forward Voltage VSD -1.5 V VGS=0V, IS=-0.5A 3

CAD (KiCad official)

  • Symbol: ESJ3139K
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: esj3139k-etched.step / esj3139k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esj3139k.step / esj3139k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (7 pp, sha256 18ef093d0ed13aaa, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF