component
ESH3D-E3
Public Made by Adomby adom
Vishay Intertech Fast Recovery / High Efficiency Diodes, DO-214AB(SMC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ESH3D-E3
Vishay Intertech · Fast Recovery / High Efficiency Diodes · DO-214AB(SMC)
ESH3D-E3 from Vishay Intertech, in a DO-214AB(SMC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the package; the positive terminal of the 200 V, 3.0 A ultrafast rectifier (VRRM 200 V for ESH3D). |
| 2 | A | passive | Anode terminal of the single-diode rectifier, opposite the cathode band end of the SMC (DO-214AB) package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AB(SMC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRMM | 200 | V | TA = 25 °C | 1 | ||
| Maximum RMS voltage | VRMS | 140 | V | TA = 25 °C | 1 | ||
| Maximum DC blocking voltage | VDC | 200 | V | TA = 25 °C | 1 | ||
| Maximum average forward rectified current | IF(AV) | 3 | A | TA = 25 °C (fig. 1) | 1 | ||
| Peak forward surge current | IFSM | 125 | A | 8.3 ms single half sine-wave superimposed on rated load | 1 | ||
| Operating junction and storage temperature range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Maximum instantaneous forward voltage | VF | 0.9 | V | IF = 3 A, pulse test 300 μs, 1 % duty cycle | 2 | ||
| Maximum DC reverse current | IR | 5 | µA | at rated DC blocking voltage, TA = 25 °C | 2 | ||
| Maximum DC reverse current | IR | 150 | µA | at rated DC blocking voltage, TA = 125 °C | 2 | ||
| Maximum reverse recovery time | trr | 25 | ns | IF = 0.5 A, IR = 1 A, Irr = 0.25 A | 2 | ||
| Typical reverse recovery time | trr | 40 | ns | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 25 °C | 2 | ||
| Typical reverse recovery time | trr | 55 | ns | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 100 °C | 2 | ||
| Typical stored charge | Qrr | 25 | nC | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 25 °C | 2 | ||
| Typical stored charge | Qrr | 60 | nC | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 100 °C | 2 | ||
| Typical junction capacitance | CJ | 70 | pF | 4.0 V, 1 MHz | 2 | ||
| Typical thermal resistance junction to ambient | RθJA | 50 | °C/W | Units mounted on PCB with 12.0 mm x 12.0 mm land areas | 2 | ||
| Typical thermal resistance junction to lead | RθJL | 15 | °C/W | Units mounted on PCB with 12.0 mm x 12.0 mm land areas | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 | 1 |
CAD (KiCad official)
- Symbol:
ESH3D-E3 - Footprint:
Diode_SMD:D_SMC - 3D model: DO-214AB(SMC) (KiCad packages3D, STEP)
- 3D model files:
esh3d-e3-etched.step/esh3d-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esh3d-e3.step/esh3d-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (5 pp, sha256
09597d321ca51c8a, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ESH3D-E3
**Vishay Intertech** · Fast Recovery / High Efficiency Diodes · DO-214AB(SMC)
ESH3D-E3 from Vishay Intertech, in a DO-214AB(SMC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the package; the positive terminal of the 200 V, 3.0 A ultrafast rectifier (VRRM 200 V for ESH3D). |
| 2 | A | passive | Anode terminal of the single-diode rectifier, opposite the cathode band end of the SMC (DO-214AB) package. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AB(SMC) |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRMM | | | 200 | V | TA = 25 °C | 1 |
| Maximum RMS voltage | VRMS | | | 140 | V | TA = 25 °C | 1 |
| Maximum DC blocking voltage | VDC | | | 200 | V | TA = 25 °C | 1 |
| Maximum average forward rectified current | IF(AV) | | | 3 | A | TA = 25 °C (fig. 1) | 1 |
| Peak forward surge current | IFSM | | | 125 | A | 8.3 ms single half sine-wave superimposed on rated load | 1 |
| Operating junction and storage temperature range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Maximum instantaneous forward voltage | VF | | | 0.9 | V | IF = 3 A, pulse test 300 μs, 1 % duty cycle | 2 |
| Maximum DC reverse current | IR | | | 5 | µA | at rated DC blocking voltage, TA = 25 °C | 2 |
| Maximum DC reverse current | IR | | | 150 | µA | at rated DC blocking voltage, TA = 125 °C | 2 |
| Maximum reverse recovery time | trr | | | 25 | ns | IF = 0.5 A, IR = 1 A, Irr = 0.25 A | 2 |
| Typical reverse recovery time | trr | | 40 | | ns | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 25 °C | 2 |
| Typical reverse recovery time | trr | | 55 | | ns | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 100 °C | 2 |
| Typical stored charge | Qrr | | 25 | | nC | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 25 °C | 2 |
| Typical stored charge | Qrr | | 60 | | nC | IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM, TJ = 100 °C | 2 |
| Typical junction capacitance | CJ | | 70 | | pF | 4.0 V, 1 MHz | 2 |
| Typical thermal resistance junction to ambient | RθJA | | 50 | | °C/W | Units mounted on PCB with 12.0 mm x 12.0 mm land areas | 2 |
| Typical thermal resistance junction to lead | RθJL | | 15 | | °C/W | Units mounted on PCB with 12.0 mm x 12.0 mm land areas | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 | 1 |
## CAD (KiCad official)
- Symbol: `ESH3D-E3`
- Footprint: `Diode_SMD:D_SMC`
- 3D model: DO-214AB(SMC) (KiCad packages3D, STEP)
- 3D model files: `esh3d-e3-etched.step` / `esh3d-e3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esh3d-e3.step` / `esh3d-e3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](docs/esh3d-e3-datasheet.pdf) (5 pp, sha256 `09597d321ca51c8a`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/esh3d-e3-datasheet.pdf)