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ESD8351XV2T1G

Public Made by Adom

by adom

onsemi ESD Protection Devices, SOD-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD8351XV2T1G

onsemi · ESD Protection Devices · SOD-523

ESD8351XV2T1G from onsemi, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode terminal of the ESD protection diode, identified by the polarity band on the SOD-523 Style 1 outline; the datasheet rates the device at a 3.3 V working peak voltage (I/O pin to GND) and 5.0 A maximum peak pulse current (8/20 µs at TA = 25°C).
2 Anode passive Anode terminal of the ESD protection diode, paired with pin 1 cathode in the SOD-523 Style 1 outline; the datasheet specifies a 0.55 pF maximum I/O-to-GND capacitance and IEC 61000-4-2 Level 4 protection (±8 kV contact, ±15 kV air).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOD-523
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown Voltage VBR 5.5 7 7.8 V IT = 1 mA, I/O Pin to GND 2
Junction Capacitance (Low Capacitance feature) CJ 0.55 pF I/O to GND 1
Operating Junction Temperature Range TJ -55 125 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Lead Solder Temperature Maximum TL 260 °C 10 seconds 1
IEC 61000-4-2 Contact (ESD) -15 15 kV IEC 61000-4-2 Contact 1
IEC 61000-4-2 Air (ESD) -15 15 kV IEC 61000-4-2 Air 1
ISO 10605 ESD -30 30 kV ISO 10605, 330 pF / 2 kΩ, Contact 1
Maximum Peak Pulse Current Ipp 5 A 8/20 s @ TA = 25°C 1
Reverse Working Voltage VRWM 3.3 V I/O Pin to GND 2
Maximum Reverse Leakage Current IR 500 nA VRWM = 3.3 V, I/O Pin to GND 2
Holding Reverse Voltage VHOLD 1.15 V I/O Pin to GND 2
Holding Reverse Current IHOLD 20 mA I/O Pin to GND 2
Clamping Voltage (TLP, IEC Level 2 equivalent) VC 6.5 V IPP = 8 A, IEC 61000-4-2 Level 2 equivalent (±4 kV Contact, ±4 kV Air) 2
Clamping Voltage (TLP, IEC Level 4 equivalent) VC 11.2 V IPP = 16 A, IEC 61000-4-2 Level 4 equivalent (±8 kV Contact, ±15 kV Air) 2
Clamping Voltage (8/20 pulse) VC 8.2 V IPP = 5 A, tp = 8 x 20 s 2
Dynamic Resistance RDYN 0.62 Pin1 to Pin2 2
Dynamic Resistance RDYN 0.59 Pin2 to Pin1 2

CAD (KiCad official)

  • Symbol: ESD8351XV2T1G
  • Footprint: Diode_SMD:D_SOD-523
  • 3D model: SOD-523 (KiCad packages3D, STEP)
  • 3D model files: esd8351xv2t1g-etched.step / esd8351xv2t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd8351xv2t1g.step / esd8351xv2t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 52082506715f58e3, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF