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ESD752DBZR

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TEXAS INSTRUMENTS Global Sourcing Parts, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD752DBZR

TEXAS INSTRUMENTS · Global Sourcing Parts · SOT-23-3

ESD752DBZR from TEXAS INSTRUMENTS, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IO 1 bidirectional ESD-protected bidirectional I/O with a reverse stand-off voltage of ±24 V (VRWM), IEC 61000-4-2 contact discharge of ±30 kV and IEC 61000-4-5 (8/20 µs) surge current of 5.7 A for the ESD752.
2 IO 2 bidirectional ESD-protected bidirectional I/O with a reverse stand-off voltage of ±24 V (VRWM), IEC 61000-4-2 contact discharge of ±30 kV and IEC 61000-4-5 (8/20 µs) surge current of 5.7 A for the ESD752.
3 GND power_in Connect to ground; the layout guidance says to use a thick and short trace for this return path when pin 3 is connected to ground.

Key specifications

Parameter Value
Manufacturer TEXAS INSTRUMENTS
Package SOT-23-3
Category Global Sourcing Parts
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse stand-off voltage VRWM -24 24 V 5
Forward breakdown voltage VBRF 25.5 35.5 V IIO = 10 mA, IO to GND 5
Reverse breakdown voltage VBRR -35.5 -25.5 V IIO = -10 mA, IO to GND 5
Leakage current ILEAK -50 5 50 nA VIO = ±24 V, IO to GND 5
Line capacitance CL 3 5 pF VIO = 0 V, f = 1 MHz, Vpp = 30 mV 5
IEC 61000-4-5 Power (tp, 8/20 µs) at 25°C, ESD752 Ppp 210 W tp, 8/20 µs at 25°C 4
IEC 61000-4-5 current (tp, 8/20 µs) at 25°C, ESD752 Ipp 5.7 A tp, 8/20 µs at 25°C 4
Operating free-air temperature TA -55 150 °C 4
Junction temperature TJ -55 150 °C 4
Storage temperature Tstg -65 155 °C 4
Electrostatic discharge (HBM) V(ESD) -2500 2500 V Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 4
Electrostatic discharge (CDM) V(ESD) -1000 1000 V Charged device model (CDM), per JEDEC JS-002 4
Electrostatic discharge, IEC 61000-4-2 contact discharge, ESD752 V(ESD) 30000 V IEC 61000-4-2 Contact Discharge, all pins 4
Electrostatic discharge, IEC 61000-4-2 air discharge, ESD752 V(ESD) 30000 V IEC 61000-4-2 Air Discharge, all pins 4
Input voltage VIN -24 24 V 4
Operating free-air temperature TA -55 150 °C 4
Clamping voltage (8/20 µs surge) VCLAMP 37 V IPP = 5.7 A, tp = 8/20 µs, IO to GND, ESD752 5
Clamping voltage (TLP) VCLAMP 35 V IPP = 16 A, TLP, IO to GND or GND to IO, ESD752 5
Holding voltage after snapback (TLP) VHold 30 V TLP, ESD752 5
Dynamic resistance RDYN 0.35 Ω IO to GND and GND to IO, ESD752 5
Junction-to-ambient thermal resistance RθJA 291.5 °C/W DBZ (SOT-23) package 4
Junction-to-case (top) thermal resistance RθJC(top) 147.1 °C/W DBZ (SOT-23) package 4
Junction-to-board thermal resistance RθJB 131.1 °C/W DBZ (SOT-23) package 4
Junction-to-top characterization parameter ΨJT 32 °C/W DBZ (SOT-23) package 4
Junction-to-board characterization parameter ΨJB 130.2 °C/W DBZ (SOT-23) package 4

CAD (KiCad official)

  • Symbol: ESD752DBZR
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: esd752dbzr-etched.step / esd752dbzr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd752dbzr.step / esd752dbzr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TEXAS INSTRUMENTS datasheet (24 pp, sha256 9027f2d577fc22ab, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF