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ESD73011N-2

Public Made by Adom

by adom

WILLSEMI(Will Semicon) ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD73011N-2

WILLSEMI(Will Semicon) · ESD Protection Devices · DFN1006-2L

ESD73011N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin1 passive Pin 1 is one terminal of the bidirectional single-line ESD TVS, marked as Pin1 on the DFN1006-2L bottom view, and the datasheet gives no separate per-pin voltage or current limit for it (ratings apply to the device, e.g. VRWM 5.0V max, IPP 5.5A, ±20kV contact ESD).
2 Pin2 passive Pin 2 is the other terminal of the bidirectional single-line ESD TVS, marked as Pin2 on the DFN1006-2L bottom view, and the datasheet gives no separate per-pin voltage or current limit for it (ratings apply to the device, e.g. VRWM 5.0V max, IPP 5.5A, ±20kV contact ESD).

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak pulse power (tp = 8/20μs) Ppk 46 W tp = 8/20μs 2
Peak pulse current (tp = 8/20μs) IPP 5.5 A tp = 8/20μs 2
ESD according to IEC61000-4-2 air discharge VESD -20 20 kV ESD according to IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -20 20 kV ESD according to IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 °C 2
Operating temperature TOP -40 85 °C 2
Lead temperature TL 260 °C 2
Storage temperature TSTG -55 150 °C 2
Reverse maximum working voltage VRWM 5 V 3
Reverse leakage current IR 50 nA VRWM = 5V 3
Reverse breakdown voltage VBR 7 V IT = 1mA 3
Junction capacitance CJ 0.4 0.5 pF VR = 0V, f = 1MHz 3
Clamping voltage (TLP) VCL 9.5 V IPP = 16A, tp = 100ns 3
Dynamic resistance (TLP) RDYN 0.3 Ω 3
Clamping voltage (ESD) VCL 9.5 V VESD = 8kV 3
Clamping voltage (8/20μs) VCL 5.5 V IPP = 1A, tp = 8/20μs 3
Clamping voltage (8/20μs) VCL 8.5 V IPP = 5.5A, tp = 8/20μs 3

CAD (KiCad official)

  • Symbol: ESD73011N-2
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: esd73011n-2-etched.step / esd73011n-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd73011n-2.step / esd73011n-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (7 pp, sha256 2a2180ed64627da6, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF