# ESD56281N06-2

**WILLSEMI Will Semicon** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

ESD56281N06-2 from WILLSEMI Will Semicon, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin1 | passive | Terminal of the unidirectional TVS whose voltage is measured from pin 1 to pin 2 for the ESD56281N06 ratings (VBR min 6.5V, VCL 9.0V at IPP 35A). |
| 2 | Pin2 | passive | Terminal of the unidirectional TVS forming the measurement reference with pin 1 for the ESD56281N06 ratings (reverse stand-off VRWM 6.3V max). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM |  |  | 6.3 | V |  | 3 |
| Reverse breakdown voltage | VBR | 6.5 | 7.5 | 9 | V | IBR = 1mA | 3 |
| Reverse leakage current | IRM |  | 1 | 100 | nA | at VRWM | 3 |
| Forward voltage | VF | 0.5 |  | 1.1 | V | IF = 20mA | 3 |
| Junction capacitance | CJ |  | 90 | 100 | pF | F=1MHz, VR=0V | 3 |
| Rated peak pulse current | IPP |  | 35 |  | A | 8/20μs per IEC61000-4-5, notes 1 and 3 | 3 |
| Clamping voltage | VCL |  | 9 |  | V | at IPP, 8/20μs per IEC61000-4-5, notes 1 and 3 | 3 |
| Clamping voltage | VCL |  | 6.6 |  | V | at IPP = 16A, tp = 100ns, notes 2 and 3 | 3 |
| Clamping voltage | VCL |  | 8 |  | V | at VESD = 8kV, notes 2 and 3 | 3 |
| Peak pulse power | Ppk |  |  | 350 | W | tp=8/20μs | 2 |
| ESD according to IEC61000-4-2 air discharge | VESD | -30 |  | 30 | kV | IEC61000-4-2 air discharge | 2 |
| ESD according to IEC61000-4-2 contact discharge | VESD | -30 |  | 30 | kV | IEC61000-4-2 contact discharge | 2 |
| Junction temperature | TJ |  |  | 125 | oC |  | 2 |
| Operating temperature | TOP | -40 |  | 85 | oC |  | 2 |
| Lead temperature | TL |  |  | 260 | oC |  | 2 |
| Storage temperature | TSTG | -55 |  | 150 | oC |  | 2 |

## CAD (KiCad official)

- Symbol: `ESD56281N06-2`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `esd56281n06-2-etched.step` / `esd56281n06-2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esd56281n06-2.step` / `esd56281n06-2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI Will Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589834762341670912) (7 pp, sha256 `a9da66c679bd1c93`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/esd56281n06-2-datasheet.pdf)