component
ESD56281N06-2
Public Made by Adomby adom
WILLSEMI Will Semicon ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownESD56281N06-2
WILLSEMI Will Semicon · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
ESD56281N06-2 from WILLSEMI Will Semicon, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin1 | passive | Terminal of the unidirectional TVS whose voltage is measured from pin 1 to pin 2 for the ESD56281N06 ratings (VBR min 6.5V, VCL 9.0V at IPP 35A). |
| 2 | Pin2 | passive | Terminal of the unidirectional TVS forming the measurement reference with pin 1 for the ESD56281N06 ratings (reverse stand-off VRWM 6.3V max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM | 6.3 | V | 3 | |||
| Reverse breakdown voltage | VBR | 6.5 | 7.5 | 9 | V | IBR = 1mA | 3 |
| Reverse leakage current | IRM | 1 | 100 | nA | at VRWM | 3 | |
| Forward voltage | VF | 0.5 | 1.1 | V | IF = 20mA | 3 | |
| Junction capacitance | CJ | 90 | 100 | pF | F=1MHz, VR=0V | 3 | |
| Rated peak pulse current | IPP | 35 | A | 8/20μs per IEC61000-4-5, notes 1 and 3 | 3 | ||
| Clamping voltage | VCL | 9 | V | at IPP, 8/20μs per IEC61000-4-5, notes 1 and 3 | 3 | ||
| Clamping voltage | VCL | 6.6 | V | at IPP = 16A, tp = 100ns, notes 2 and 3 | 3 | ||
| Clamping voltage | VCL | 8 | V | at VESD = 8kV, notes 2 and 3 | 3 | ||
| Peak pulse power | Ppk | 350 | W | tp=8/20μs | 2 | ||
| ESD according to IEC61000-4-2 air discharge | VESD | -30 | 30 | kV | IEC61000-4-2 air discharge | 2 | |
| ESD according to IEC61000-4-2 contact discharge | VESD | -30 | 30 | kV | IEC61000-4-2 contact discharge | 2 | |
| Junction temperature | TJ | 125 | oC | 2 | |||
| Operating temperature | TOP | -40 | 85 | oC | 2 | ||
| Lead temperature | TL | 260 | oC | 2 | |||
| Storage temperature | TSTG | -55 | 150 | oC | 2 |
CAD (KiCad official)
- Symbol:
ESD56281N06-2 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
esd56281n06-2-etched.step/esd56281n06-2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd56281n06-2.step/esd56281n06-2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (7 pp, sha256
a9da66c679bd1c93, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).