component
ESD5325E-6
Public Made by Adomby adom
WILLSEMI Will Semicon ESD And Surge Protection (TVS/ESD), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ESD5325E-6
WILLSEMI Will Semicon · ESD And Surge Protection (TVS/ESD) · SOT-23-6L
ESD5325E-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
| 2 | GND | power_in | Ground reference for the I/O clamps and the VDD TVS; operating supply voltage VDD to GND is 6 V max. |
| 3 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
| 4 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
| 5 | VDD | power_in | Positive supply pin for the TVS diode; reverse stand-off voltage 6 V max (VDD to GND) and peak pulse current 6 A (8/20 µs). |
| 6 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-6L |
| Category | Circuit Protection |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage (I/O pins) | VRWM | 5 | V | 3 | |||
| Reverse leakage current (I/O pins) | IR | 100 | nA | VRWM = 5V | 3 | ||
| Reverse breakdown voltage (I/O pins) | VBR | 7 | 8 | 9 | V | IBR = 1mA | 3 |
| Forward voltage (I/O pins) | VF | 0.6 | 0.9 | 1.2 | V | IF = 10mA | 3 |
| Clamping voltage (I/O pins, TLP) | VCL | 12.5 | V | IPP = 16A, tp = 100ns | 3 | ||
| Dynamic resistance (I/O pins) | RDYN | 0.24 | Ω | tp = 100ns | 3 | ||
| Clamping voltage (I/O pins, ESD) | VCL | 12.5 | V | VESD = 8kV | 3 | ||
| Clamping voltage (I/O pins, surge) | VCL | 8.5 | V | IPP = 1A, tp = 8/20μs | 3 | ||
| Clamping voltage (I/O pins, surge) | VCL | 11.5 | V | IPP = 6A, tp = 8/20μs | 3 | ||
| Junction capacitance I/O to GND | CI/O - GND | 1 | 1.6 | pF | VR = 0V, f = 1MHz, any I/O to GND | 3 | |
| Junction capacitance I/O to I/O | CI/O, I/O | 0.5 | 0.8 | pF | VR = 0V, f = 1MHz, any I/O to I/O | 3 | |
| Reverse stand-off voltage (VDD pin) | VRWM | 6 | V | 3 | |||
| Reverse leakage current (VDD pin) | IR | 1 | μA | VRWM = 6V | 3 | ||
| Reverse breakdown voltage (VDD pin) | VBR | 7 | 8 | 9 | V | IBR = 1mA | 3 |
| Forward voltage (VDD pin) | VF | 0.6 | 0.9 | 1.2 | V | IF = 10mA | 3 |
| Clamping voltage (VDD pin, TLP) | VCL | 12 | V | IPP = 16A, tp = 100ns | 3 | ||
| Dynamic resistance (VDD pin) | RDYN | 0.21 | Ω | tp = 100ns | 3 | ||
| Clamping voltage (VDD pin, ESD) | VCL | 12 | V | VESD = 8kV | 3 | ||
| Clamping voltage (VDD pin, surge) | VCL | 8.5 | V | IPP = 1A, tp = 8/20μs | 3 | ||
| Clamping voltage (VDD pin, surge) | VCL | 11 | V | IPP = 6A, tp = 8/20μs | 3 | ||
| Peak pulse power | Ppk | 70 | W | tp = 8/20μs | 2 | ||
| Peak pulse current | IPP | 6 | A | tp = 8/20μs | 2 | ||
| Operating supply voltage (VDD to GND) | VDC | 6 | V | 2 | |||
| ESD IEC61000-4-2 air discharge (I/O pins) | VESD | -30 | 30 | kV | IEC61000-4-2 air discharge | 2 | |
| ESD IEC61000-4-2 contact discharge (I/O pins) | VESD | -30 | 30 | kV | IEC61000-4-2 contact discharge | 2 | |
| Junction temperature | TJ | 125 | oC | 2 | |||
| Operation temperature | TOP | -40 | 85 | oC | 2 | ||
| Storage temperature | TSTG | -55 | 150 | oC | 2 | ||
| Lead temperature | TL | 260 | oC | 2 |
CAD (KiCad official)
- Symbol:
ESD5325E-6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
esd5325e-6-etched.step/esd5325e-6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd5325e-6.step/esd5325e-6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (7 pp, sha256
2723452b472b1810, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ESD5325E-6
**WILLSEMI Will Semicon** · ESD And Surge Protection (TVS/ESD) · SOT-23-6L
ESD5325E-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
| 2 | GND | power_in | Ground reference for the I/O clamps and the VDD TVS; operating supply voltage VDD to GND is 6 V max. |
| 3 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
| 4 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
| 5 | VDD | power_in | Positive supply pin for the TVS diode; reverse stand-off voltage 6 V max (VDD to GND) and peak pulse current 6 A (8/20 µs). |
| 6 | I/O | passive | Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-6L |
| Category | Circuit Protection |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage (I/O pins) | VRWM | | | 5 | V | | 3 |
| Reverse leakage current (I/O pins) | IR | | | 100 | nA | VRWM = 5V | 3 |
| Reverse breakdown voltage (I/O pins) | VBR | 7 | 8 | 9 | V | IBR = 1mA | 3 |
| Forward voltage (I/O pins) | VF | 0.6 | 0.9 | 1.2 | V | IF = 10mA | 3 |
| Clamping voltage (I/O pins, TLP) | VCL | | | 12.5 | V | IPP = 16A, tp = 100ns | 3 |
| Dynamic resistance (I/O pins) | RDYN | | | 0.24 | Ω | tp = 100ns | 3 |
| Clamping voltage (I/O pins, ESD) | VCL | | | 12.5 | V | VESD = 8kV | 3 |
| Clamping voltage (I/O pins, surge) | VCL | | | 8.5 | V | IPP = 1A, tp = 8/20μs | 3 |
| Clamping voltage (I/O pins, surge) | VCL | | | 11.5 | V | IPP = 6A, tp = 8/20μs | 3 |
| Junction capacitance I/O to GND | CI/O - GND | | 1 | 1.6 | pF | VR = 0V, f = 1MHz, any I/O to GND | 3 |
| Junction capacitance I/O to I/O | CI/O, I/O | | 0.5 | 0.8 | pF | VR = 0V, f = 1MHz, any I/O to I/O | 3 |
| Reverse stand-off voltage (VDD pin) | VRWM | | | 6 | V | | 3 |
| Reverse leakage current (VDD pin) | IR | | | 1 | μA | VRWM = 6V | 3 |
| Reverse breakdown voltage (VDD pin) | VBR | 7 | 8 | 9 | V | IBR = 1mA | 3 |
| Forward voltage (VDD pin) | VF | 0.6 | 0.9 | 1.2 | V | IF = 10mA | 3 |
| Clamping voltage (VDD pin, TLP) | VCL | | | 12 | V | IPP = 16A, tp = 100ns | 3 |
| Dynamic resistance (VDD pin) | RDYN | | | 0.21 | Ω | tp = 100ns | 3 |
| Clamping voltage (VDD pin, ESD) | VCL | | | 12 | V | VESD = 8kV | 3 |
| Clamping voltage (VDD pin, surge) | VCL | | | 8.5 | V | IPP = 1A, tp = 8/20μs | 3 |
| Clamping voltage (VDD pin, surge) | VCL | | | 11 | V | IPP = 6A, tp = 8/20μs | 3 |
| Peak pulse power | Ppk | | | 70 | W | tp = 8/20μs | 2 |
| Peak pulse current | IPP | | | 6 | A | tp = 8/20μs | 2 |
| Operating supply voltage (VDD to GND) | VDC | | | 6 | V | | 2 |
| ESD IEC61000-4-2 air discharge (I/O pins) | VESD | -30 | | 30 | kV | IEC61000-4-2 air discharge | 2 |
| ESD IEC61000-4-2 contact discharge (I/O pins) | VESD | -30 | | 30 | kV | IEC61000-4-2 contact discharge | 2 |
| Junction temperature | TJ | | | 125 | oC | | 2 |
| Operation temperature | TOP | -40 | | 85 | oC | | 2 |
| Storage temperature | TSTG | -55 | | 150 | oC | | 2 |
| Lead temperature | TL | | | 260 | oC | | 2 |
## CAD (KiCad official)
- Symbol: `ESD5325E-6`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `esd5325e-6-etched.step` / `esd5325e-6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esd5325e-6.step` / `esd5325e-6.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WILLSEMI Will Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590215488086716416) (7 pp, sha256 `2723452b472b1810`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/esd5325e-6-datasheet.pdf)