component

ESD5325E-6

Public Made by Adom

by adom

WILLSEMI Will Semicon ESD And Surge Protection (TVS/ESD), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentcircuit protectionesd5325e-6factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers esd5325e-6: viewers · Ray 8d ago
esd5325e-6-etched.glb Publish 0.1.0 · Ray 8d ago
esd5325e-6-etched.step esd5325e-6: factory component page (tier=lcsc) · Ray 8d ago
esd5325e-6-hero.glb esd5325e-6: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
esd5325e-6-hero.overlay.json Publish 0.1.0 · Ray 8d ago
esd5325e-6.glb Publish 0.1.0 · Ray 8d ago
esd5325e-6.kicad_mod Publish 0.1.0 · Ray 8d ago
esd5325e-6.kicad_sym Publish 0.1.0 · Ray 8d ago
esd5325e-6.lbr Publish 0.1.0 · Ray 8d ago
esd5325e-6.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago

ESD5325E-6

WILLSEMI Will Semicon · ESD And Surge Protection (TVS/ESD) · SOT-23-6L

ESD5325E-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O passive Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2.
2 GND power_in Ground reference for the I/O clamps and the VDD TVS; operating supply voltage VDD to GND is 6 V max.
3 I/O passive Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2.
4 I/O passive Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2.
5 VDD power_in Positive supply pin for the TVS diode; reverse stand-off voltage 6 V max (VDD to GND) and peak pulse current 6 A (8/20 µs).
6 I/O passive Protected data line with 1.0 pF typ. capacitance to GND, clamping to 12.5 V at IPP = 16 A (TLP), and ±30 kV contact discharge protection per IEC61000-4-2.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23-6L
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse stand-off voltage (I/O pins) VRWM 5 V 3
Reverse leakage current (I/O pins) IR 100 nA VRWM = 5V 3
Reverse breakdown voltage (I/O pins) VBR 7 8 9 V IBR = 1mA 3
Forward voltage (I/O pins) VF 0.6 0.9 1.2 V IF = 10mA 3
Clamping voltage (I/O pins, TLP) VCL 12.5 V IPP = 16A, tp = 100ns 3
Dynamic resistance (I/O pins) RDYN 0.24 Ω tp = 100ns 3
Clamping voltage (I/O pins, ESD) VCL 12.5 V VESD = 8kV 3
Clamping voltage (I/O pins, surge) VCL 8.5 V IPP = 1A, tp = 8/20μs 3
Clamping voltage (I/O pins, surge) VCL 11.5 V IPP = 6A, tp = 8/20μs 3
Junction capacitance I/O to GND CI/O - GND 1 1.6 pF VR = 0V, f = 1MHz, any I/O to GND 3
Junction capacitance I/O to I/O CI/O, I/O 0.5 0.8 pF VR = 0V, f = 1MHz, any I/O to I/O 3
Reverse stand-off voltage (VDD pin) VRWM 6 V 3
Reverse leakage current (VDD pin) IR 1 μA VRWM = 6V 3
Reverse breakdown voltage (VDD pin) VBR 7 8 9 V IBR = 1mA 3
Forward voltage (VDD pin) VF 0.6 0.9 1.2 V IF = 10mA 3
Clamping voltage (VDD pin, TLP) VCL 12 V IPP = 16A, tp = 100ns 3
Dynamic resistance (VDD pin) RDYN 0.21 Ω tp = 100ns 3
Clamping voltage (VDD pin, ESD) VCL 12 V VESD = 8kV 3
Clamping voltage (VDD pin, surge) VCL 8.5 V IPP = 1A, tp = 8/20μs 3
Clamping voltage (VDD pin, surge) VCL 11 V IPP = 6A, tp = 8/20μs 3
Peak pulse power Ppk 70 W tp = 8/20μs 2
Peak pulse current IPP 6 A tp = 8/20μs 2
Operating supply voltage (VDD to GND) VDC 6 V 2
ESD IEC61000-4-2 air discharge (I/O pins) VESD -30 30 kV IEC61000-4-2 air discharge 2
ESD IEC61000-4-2 contact discharge (I/O pins) VESD -30 30 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 oC 2
Operation temperature TOP -40 85 oC 2
Storage temperature TSTG -55 150 oC 2
Lead temperature TL 260 oC 2

CAD (KiCad official)

  • Symbol: ESD5325E-6
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: esd5325e-6-etched.step / esd5325e-6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5325e-6.step / esd5325e-6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (7 pp, sha256 2723452b472b1810, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF