component

ES15N10G

Public Made by Adom

by adom

ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistores15n10gfactory-2.0.0extractor-text

Verified ES15N10G

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: ES15N10G · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 5-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ipwuk0yn/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ es15n10g.kicad_sym✓ es15n10g.kicad_mod✓ es15n10g.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers es15n10g: viewers · Ray 4d ago
es15n10g-etched.glb Publish 0.1.0 · Ray 4d ago
es15n10g-etched.step es15n10g: factory component page (tier=lcsc) · Ray 4d ago
es15n10g-hero.glb es15n10g: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
es15n10g-hero.overlay.json Publish 0.1.0 · Ray 4d ago
es15n10g.glb Publish 0.1.0 · Ray 4d ago
es15n10g.kicad_mod Publish 0.1.0 · Ray 4d ago
es15n10g.kicad_sym Publish 0.1.0 · Ray 4d ago
es15n10g.lbr Publish 0.1.0 · Ray 4d ago
es15n10g.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 4d ago

ES15N10G

ElecSuper · MOSFETs · TO-252

ES15N10G from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET, rated for a Gate-Source voltage of ±20 V.
2 Drain passive Drain terminal of the MOSFET, rated for a 100 V Drain-Source voltage and 12 A continuous drain current at TC=25°C.
3 Source passive Source terminal of the MOSFET, the reference for the gate drive and the body diode return path.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 12 A TC=25°C 2
Continuous Drain Current ID 9.5 A TC=70°C 2
Maximum Power Dissipation PD 35 W TC=25°C 2
Maximum Power Dissipation PD 22.5 W TC=70°C 2
Pulsed Drain Current IDM 48 A Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% 2
Avalanche Current, Single Pulsed IAS 10 A Tj=25℃, VDD=100V, VG=10V, L=0.3mH, Rg=25Ω 2
Avalanche Energy, Single Pulsed EAS 15 mJ Tj=25℃, VDD=100V, VG=10V, L=0.3mH, Rg=25Ω 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 110 °C/W t ≤ 10 s, single operation 2
Junction-to-Case Thermal Resistance RθJC 3.5 °C/W Steady state, single operation 2
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=100V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.5 2 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 85 120 mΩ VGS=10V, ID=8.0A 3
Drain-to-source On-resistance RDS(on) 92 135 mΩ VGS=4.5V, ID=8.0A 3
Forward Voltage VSD 1.5 2 V VGS=0V, IS=8.0A 3

CAD (KiCad official)

  • Symbol: ES15N10G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: es15n10g-etched.step / es15n10g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); es15n10g.step / es15n10g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (5 pp, sha256 849999c8fa15c058, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF