component
ES15N10G
Public Made by Adomby adom
ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownES15N10G
ElecSuper · MOSFETs · TO-252
ES15N10G from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, rated for a Gate-Source voltage of ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for a 100 V Drain-Source voltage and 12 A continuous drain current at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the gate drive and the body diode return path. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 12 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | 9.5 | A | TC=70°C | 2 | ||
| Maximum Power Dissipation | PD | 35 | W | TC=25°C | 2 | ||
| Maximum Power Dissipation | PD | 22.5 | W | TC=70°C | 2 | ||
| Pulsed Drain Current | IDM | 48 | A | Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% | 2 | ||
| Avalanche Current, Single Pulsed | IAS | 10 | A | Tj=25℃, VDD=100V, VG=10V, L=0.3mH, Rg=25Ω | 2 | ||
| Avalanche Energy, Single Pulsed | EAS | 15 | mJ | Tj=25℃, VDD=100V, VG=10V, L=0.3mH, Rg=25Ω | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 110 | °C/W | t ≤ 10 s, single operation | 2 | ||
| Junction-to-Case Thermal Resistance | RθJC | 3.5 | °C/W | Steady state, single operation | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.5 | 2 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 85 | 120 | mΩ | VGS=10V, ID=8.0A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 92 | 135 | mΩ | VGS=4.5V, ID=8.0A | 3 | |
| Forward Voltage | VSD | 1.5 | 2 | V | VGS=0V, IS=8.0A | 3 |
CAD (KiCad official)
- Symbol:
ES15N10G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
es15n10g-etched.step/es15n10g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);es15n10g.step/es15n10g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (5 pp, sha256
849999c8fa15c058, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).