component
EMX2T2R
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| emx2t2r-etched.glb | 24d ago |
| emx2t2r-etched.step | 24d ago |
| emx2t2r-hero.glb | 24d ago |
| emx2t2r-hero.overlay.json | 24d ago |
| emx2t2r.glb | 24d ago |
| emx2t2r.kicad_mod | 24d ago |
| emx2t2r.kicad_sym | 24d ago |
| emx2t2r.lbr | 24d ago |
| emx2t2r.step | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
EMX2T2R
ROHM Semicon · Bipolar (BJT) · SOT-563
EMX2T2R from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Tr1 emitter terminal of the first 2SC2412K NPN transistor (VCEO 50V, IC 150mA). |
| 2 | E2 | passive | Tr2 emitter terminal of the second 2SC2412K NPN transistor (VCEO 50V, IC 150mA). |
| 3 | B2 | passive | Tr2 base terminal; emitter-base voltage limited to 7V maximum. |
| 4 | C2 | passive | Tr2 collector terminal; collector-emitter voltage 50V max and collector-base voltage 60V max. |
| 5 | B1 | passive | Tr1 base terminal; emitter-base voltage limited to 7V maximum. |
| 6 | C1 | passive | Tr1 collector terminal; collector-emitter voltage 50V max and collector-base voltage 60V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | V | IC = 50μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 50 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 7 | V | IE = 50μA | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB = 60V | 2 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB = 7V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 400 | mV | IC = 50mA, IB = 5mA | 2 | ||
| DC current gain | hFE | 120 | 560 | - | VCE = 6V, IC = 1mA | 2 | |
| Output capacitance | Cob | 2 | 3.5 | pF | VCB = 12V, IE = 0A, f = 1MHz | 2 | |
| Collector-base voltage | VCBO | 60 | V | Ta = 25°C; for Tr1 and Tr2 in common | 2 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta = 25°C; for Tr1 and Tr2 in common | 2 | ||
| Emitter-base voltage | VEBO | 7 | V | Ta = 25°C; for Tr1 and Tr2 in common | 2 | ||
| Collector current | IC | 150 | mA | Ta = 25°C; for Tr1 and Tr2 in common | 2 | ||
| Power dissipation (EMX2, SOT-563) | PD | 150 | mW/Total | EMX2/UMX2N; each terminal mounted on reference land; 120mW per element must not be exceeded | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
EMX2T2R - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
emx2t2r-etched.step/emx2t2r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);emx2t2r.step/emx2t2r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (9 pp, sha256
c91484f735619948, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).