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EMX2T2R

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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EMX2T2R

ROHM Semicon · Bipolar (BJT) · SOT-563

EMX2T2R from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Tr1 emitter terminal of the first 2SC2412K NPN transistor (VCEO 50V, IC 150mA).
2 E2 passive Tr2 emitter terminal of the second 2SC2412K NPN transistor (VCEO 50V, IC 150mA).
3 B2 passive Tr2 base terminal; emitter-base voltage limited to 7V maximum.
4 C2 passive Tr2 collector terminal; collector-emitter voltage 50V max and collector-base voltage 60V max.
5 B1 passive Tr1 base terminal; emitter-base voltage limited to 7V maximum.
6 C1 passive Tr1 collector terminal; collector-emitter voltage 50V max and collector-base voltage 60V max.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 60 V IC = 50μA 2
Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 7 V IE = 50μA 2
Collector cut-off current ICBO 100 nA VCB = 60V 2
Emitter cut-off current IEBO 100 nA VEB = 7V 2
Collector-emitter saturation voltage VCE(sat) 400 mV IC = 50mA, IB = 5mA 2
DC current gain hFE 120 560 - VCE = 6V, IC = 1mA 2
Output capacitance Cob 2 3.5 pF VCB = 12V, IE = 0A, f = 1MHz 2
Collector-base voltage VCBO 60 V Ta = 25°C; for Tr1 and Tr2 in common 2
Collector-emitter voltage VCEO 50 V Ta = 25°C; for Tr1 and Tr2 in common 2
Emitter-base voltage VEBO 7 V Ta = 25°C; for Tr1 and Tr2 in common 2
Collector current IC 150 mA Ta = 25°C; for Tr1 and Tr2 in common 2
Power dissipation (EMX2, SOT-563) PD 150 mW/Total EMX2/UMX2N; each terminal mounted on reference land; 120mW per element must not be exceeded 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: EMX2T2R
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: emx2t2r-etched.step / emx2t2r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); emx2t2r.step / emx2t2r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (9 pp, sha256 c91484f735619948, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF