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EMH60T2R
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ROHM Semicon Digital Transistors, SOT-563. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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EMH60T2R
ROHM Semicon · Digital Transistors · SOT-563
EMH60T2R from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DTr1 GND(Emitter) | passive | Emitter of DTr1 (ground); the built-in transistor is part of a 50V, 100mA digital transistor with R1 2.2kΩ and R2 47kΩ. |
| 2 | DTr1 IN(Base) | input | Base input of DTr1 through R1 2.2kΩ; VI(off) max 0.5V, VI(on) min 1.1V, input voltage range 12 to -5V. |
| 3 | DTr2 OUT(Collector) | passive | Collector output of DTr2; supply voltage VCC max 50V, output current IO max 100mA. |
| 4 | DTr2 GND(Emitter) | passive | Emitter of DTr2 (ground); the built-in transistor is part of a 50V, 100mA digital transistor with R1 2.2kΩ and R2 47kΩ. |
| 5 | DTr2 IN(Base) | input | Base input of DTr2 through R1 2.2kΩ; VI(off) max 0.5V, VI(on) min 1.1V, input voltage range 12 to -5V. |
| 6 | DTr1 OUT(Collector) | passive | Collector output of DTr1; supply voltage VCC max 50V, output current IO max 100mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VCC | 50 | V | 2 | |||
| Input voltage | VIN | -5 | 12 | V | printed as 12 to -5 | 2 | |
| Output current | IO | 100 | mA | 2 | |||
| Collector current (max) | IC(MAX) | 100 | mA | footnote *1: characteristics of built-in transistor | 2 | ||
| Power dissipation (total) | PD | 150 | mW/TOTAL | footnote 23: terminal mounted on a reference footprint | 2 | ||
| Power dissipation (per element) | PD | 120 | mW | footnote *3: 120mW per element must not be exceeded | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Input voltage (OFF) | VI(off) | 0.5 | V | VCC = 5V, IO = 0.1mA | 2 | ||
| Input voltage (ON) | VI(on) | 1.1 | V | VO = 0.3V, IO = 5mA | 2 | ||
| Output voltage (ON) | VO(on) | 50 | 150 | mV | IO = 5mA, II = 0.5mA | 2 | |
| Input current | II | 3.6 | mA | VI = 5V | 2 | ||
| Output current (OFF) | IO(off) | 500 | nA | VCC = 50V, VI = 0V | 2 | ||
| DC current gain | GI | 80 | - | VO = 10V, IO = 5mA | 2 | ||
| Input resistance | R1 | 1.54 | 2.2 | 2.86 | kΩ | 2 | |
| Resistance ratio | R2/R1 | 17 | 21 | 26 | - | 2 | |
| Transition frequency | fT | 250 | MHz | VCE = 10V, IE = -5mA, f = 100MHz; footnote *1: characteristics of built-in transistor | 2 |
CAD (KiCad official)
- Symbol:
EMH60T2R - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
emh60t2r-etched.step/emh60t2r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);emh60t2r.step/emh60t2r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (7 pp, sha256
f7b2f9d6ba005889, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# EMH60T2R
**ROHM Semicon** · Digital Transistors · SOT-563
EMH60T2R from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DTr1 GND(Emitter) | passive | Emitter of DTr1 (ground); the built-in transistor is part of a 50V, 100mA digital transistor with R1 2.2kΩ and R2 47kΩ. |
| 2 | DTr1 IN(Base) | input | Base input of DTr1 through R1 2.2kΩ; VI(off) max 0.5V, VI(on) min 1.1V, input voltage range 12 to -5V. |
| 3 | DTr2 OUT(Collector) | passive | Collector output of DTr2; supply voltage VCC max 50V, output current IO max 100mA. |
| 4 | DTr2 GND(Emitter) | passive | Emitter of DTr2 (ground); the built-in transistor is part of a 50V, 100mA digital transistor with R1 2.2kΩ and R2 47kΩ. |
| 5 | DTr2 IN(Base) | input | Base input of DTr2 through R1 2.2kΩ; VI(off) max 0.5V, VI(on) min 1.1V, input voltage range 12 to -5V. |
| 6 | DTr1 OUT(Collector) | passive | Collector output of DTr1; supply voltage VCC max 50V, output current IO max 100mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VCC | | | 50 | V | | 2 |
| Input voltage | VIN | -5 | | 12 | V | printed as 12 to -5 | 2 |
| Output current | IO | | | 100 | mA | | 2 |
| Collector current (max) | IC(MAX) | | | 100 | mA | footnote *1: characteristics of built-in transistor | 2 |
| Power dissipation (total) | PD | | | 150 | mW/TOTAL | footnote *2*3: terminal mounted on a reference footprint | 2 |
| Power dissipation (per element) | PD | | | 120 | mW | footnote *3: 120mW per element must not be exceeded | 2 |
| Junction temperature | Tj | | | 150 | ℃ | | 2 |
| Range of storage temperature | Tstg | -55 | | 150 | ℃ | | 2 |
| Input voltage (OFF) | VI(off) | | | 0.5 | V | VCC = 5V, IO = 0.1mA | 2 |
| Input voltage (ON) | VI(on) | 1.1 | | | V | VO = 0.3V, IO = 5mA | 2 |
| Output voltage (ON) | VO(on) | | 50 | 150 | mV | IO = 5mA, II = 0.5mA | 2 |
| Input current | II | | | 3.6 | mA | VI = 5V | 2 |
| Output current (OFF) | IO(off) | | | 500 | nA | VCC = 50V, VI = 0V | 2 |
| DC current gain | GI | 80 | | | - | VO = 10V, IO = 5mA | 2 |
| Input resistance | R1 | 1.54 | 2.2 | 2.86 | kΩ | | 2 |
| Resistance ratio | R2/R1 | 17 | 21 | 26 | - | | 2 |
| Transition frequency | fT | | 250 | | MHz | VCE = 10V, IE = -5mA, f = 100MHz; footnote *1: characteristics of built-in transistor | 2 |
## CAD (KiCad official)
- Symbol: `EMH60T2R`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `emh60t2r-etched.step` / `emh60t2r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `emh60t2r.step` / `emh60t2r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590908340387979264) (7 pp, sha256 `f7b2f9d6ba005889`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/emh60t2r-datasheet.pdf)