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Contents

README

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EMH60T2R

ROHM Semicon · Digital Transistors · SOT-563

EMH60T2R from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 DTr1 GND(Emitter) passive Emitter of DTr1 (ground); the built-in transistor is part of a 50V, 100mA digital transistor with R1 2.2kΩ and R2 47kΩ.
2 DTr1 IN(Base) input Base input of DTr1 through R1 2.2kΩ; VI(off) max 0.5V, VI(on) min 1.1V, input voltage range 12 to -5V.
3 DTr2 OUT(Collector) passive Collector output of DTr2; supply voltage VCC max 50V, output current IO max 100mA.
4 DTr2 GND(Emitter) passive Emitter of DTr2 (ground); the built-in transistor is part of a 50V, 100mA digital transistor with R1 2.2kΩ and R2 47kΩ.
5 DTr2 IN(Base) input Base input of DTr2 through R1 2.2kΩ; VI(off) max 0.5V, VI(on) min 1.1V, input voltage range 12 to -5V.
6 DTr1 OUT(Collector) passive Collector output of DTr1; supply voltage VCC max 50V, output current IO max 100mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC 50 V 2
Input voltage VIN -5 12 V printed as 12 to -5 2
Output current IO 100 mA 2
Collector current (max) IC(MAX) 100 mA footnote *1: characteristics of built-in transistor 2
Power dissipation (total) PD 150 mW/TOTAL footnote 23: terminal mounted on a reference footprint 2
Power dissipation (per element) PD 120 mW footnote *3: 120mW per element must not be exceeded 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2
Input voltage (OFF) VI(off) 0.5 V VCC = 5V, IO = 0.1mA 2
Input voltage (ON) VI(on) 1.1 V VO = 0.3V, IO = 5mA 2
Output voltage (ON) VO(on) 50 150 mV IO = 5mA, II = 0.5mA 2
Input current II 3.6 mA VI = 5V 2
Output current (OFF) IO(off) 500 nA VCC = 50V, VI = 0V 2
DC current gain GI 80 - VO = 10V, IO = 5mA 2
Input resistance R1 1.54 2.2 2.86 kΩ 2
Resistance ratio R2/R1 17 21 26 - 2
Transition frequency fT 250 MHz VCE = 10V, IE = -5mA, f = 100MHz; footnote *1: characteristics of built-in transistor 2

CAD (KiCad official)

  • Symbol: EMH60T2R
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: emh60t2r-etched.step / emh60t2r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); emh60t2r.step / emh60t2r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (7 pp, sha256 f7b2f9d6ba005889, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF