component

DXT2222A-13

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsdxt2222a-13factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers dxt2222a-13: viewers · Ray 7d ago
dxt2222a-13-etched.glb Publish 0.1.0 · Ray 7d ago
dxt2222a-13-etched.step dxt2222a-13: factory component page (tier=mfr) · Ray 7d ago
dxt2222a-13-hero.glb dxt2222a-13: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
dxt2222a-13-hero.overlay.json Publish 0.1.0 · Ray 7d ago
dxt2222a-13.glb Publish 0.1.0 · Ray 7d ago
dxt2222a-13.kicad_mod Publish 0.1.0 · Ray 7d ago
dxt2222a-13.kicad_sym Publish 0.1.0 · Ray 7d ago
dxt2222a-13.lbr Publish 0.1.0 · Ray 7d ago
dxt2222a-13.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago

DXT2222A-13

Diodes Incorporated · Bipolar Transistors - BJT · SOT-89

DXT2222A-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; emitter-base breakdown BVEBO is 6V minimum and VEBO absolute maximum is 6V.
2 C passive Collector, also connected to the exposed collector tab; VCEO is 40V, VCBO is 75V, continuous IC is 600mA and peak ICM is 800mA.
3 E passive Emitter of the NPN transistor, the common return of the device symbol.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 75 V TA = +25°C 2
Collector-Emitter Voltage VCEO 40 V TA = +25°C 2
Emitter-Base Voltage VEBO 6 V TA = +25°C 2
Peak Pulse Current ICM 800 mA TA = +25°C 2
Continuous Collector Current IC 600 mA TA = +25°C 2
Power Dissipation (Note 5) PD 0.75 W Minimum recommended pad layout 2
Power Dissipation (Note 6) PD 1.2 W 25mm x 25mm 1oz copper 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 166 °C/W Minimum recommended pad layout 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 104 °C/W 25mm x 25mm 1oz copper 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2
Collector-Base Breakdown Voltage BVCBO 75 V IC = 100µA 3
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10mA 3
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100µA 3
Collector Cut-Off Current ICBO 10 nA VCB = 60V 3
Collector Cut-Off Current ICBO 10 µA VCB = 60V, TA = +150°C 3
Emitter Cut-Off Current IEBO 10 nA VEB = 3.0V 3
Base Cut-Off Current IBL 20 nA VCE = 60V, VEB(off) = 3.0V 3
DC Current Gain hFE 35 IC = 100µA, VCE = 10V 3
DC Current Gain hFE 50 IC = 1.0mA, VCE = 10V 3
DC Current Gain hFE 75 IC = 10mA, VCE = 10V 3
DC Current Gain hFE 100 300 IC = 150mA, VCE = 10V 3
DC Current Gain hFE 40 IC = 500mA, VCE = 10V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC = 150mA, IB = 15mA 3
Collector-Emitter Saturation Voltage VCE(sat) 1 V IC = 500mA, IB = 50mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 V IC = 150mA, IB = 15mA 3
Base-Emitter Saturation Voltage VBE(sat) 2 V IC = 500mA, IB = 50mA 3
Output Capacitance Cobo 8 pF VCB = 10V, f = 1.0MHz 3
Input Capacitance Cibo 25 pF VEB = 0.5V, f = 1.0MHz 3
Transition frequency fT 300 MHz VCE = 20V, IC = 20mA, f = 100MHz 3
Noise Figure NF 4 dB VCE = 10V, IC = 150µA, RS = 1.0kΩ, f = 1.0kHz 3
Delay Time td 10 ns VCC = 30V, IC = 150mA, VEB(off) = 0.5V, IB1 = 15mA 3
Rise Time tr 25 ns VCC = 30V, IC = 150mA, VEB(off) = 0.5V, IB1 = 15mA 3
Storage Time ts 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3
Fall Time tf 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DXT2222A-13
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dxt2222a-13-etched.step / dxt2222a-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dxt2222a-13.step / dxt2222a-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 c24ae914fd7cf85c, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF