component
DXT2222A-13
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownDXT2222A-13
Diodes Incorporated · Bipolar Transistors - BJT · SOT-89
DXT2222A-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base breakdown BVEBO is 6V minimum and VEBO absolute maximum is 6V. |
| 2 | C | passive | Collector, also connected to the exposed collector tab; VCEO is 40V, VCBO is 75V, continuous IC is 600mA and peak ICM is 800mA. |
| 3 | E | passive | Emitter of the NPN transistor, the common return of the device symbol. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 75 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 40 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 6 | V | TA = +25°C | 2 | ||
| Peak Pulse Current | ICM | 800 | mA | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 600 | mA | TA = +25°C | 2 | ||
| Power Dissipation (Note 5) | PD | 0.75 | W | Minimum recommended pad layout | 2 | ||
| Power Dissipation (Note 6) | PD | 1.2 | W | 25mm x 25mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 166 | °C/W | Minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 104 | °C/W | 25mm x 25mm 1oz copper | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| ESD Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | 75 | V | IC = 100µA | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 40 | V | IC = 10mA | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100µA | 3 | ||
| Collector Cut-Off Current | ICBO | 10 | nA | VCB = 60V | 3 | ||
| Collector Cut-Off Current | ICBO | 10 | µA | VCB = 60V, TA = +150°C | 3 | ||
| Emitter Cut-Off Current | IEBO | 10 | nA | VEB = 3.0V | 3 | ||
| Base Cut-Off Current | IBL | 20 | nA | VCE = 60V, VEB(off) = 3.0V | 3 | ||
| DC Current Gain | hFE | 35 | IC = 100µA, VCE = 10V | 3 | |||
| DC Current Gain | hFE | 50 | IC = 1.0mA, VCE = 10V | 3 | |||
| DC Current Gain | hFE | 75 | IC = 10mA, VCE = 10V | 3 | |||
| DC Current Gain | hFE | 100 | 300 | IC = 150mA, VCE = 10V | 3 | ||
| DC Current Gain | hFE | 40 | IC = 500mA, VCE = 10V | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | V | IC = 150mA, IB = 15mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1 | V | IC = 500mA, IB = 50mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | 1.2 | V | IC = 150mA, IB = 15mA | 3 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 2 | V | IC = 500mA, IB = 50mA | 3 | ||
| Output Capacitance | Cobo | 8 | pF | VCB = 10V, f = 1.0MHz | 3 | ||
| Input Capacitance | Cibo | 25 | pF | VEB = 0.5V, f = 1.0MHz | 3 | ||
| Transition frequency | fT | 300 | MHz | VCE = 20V, IC = 20mA, f = 100MHz | 3 | ||
| Noise Figure | NF | 4 | dB | VCE = 10V, IC = 150µA, RS = 1.0kΩ, f = 1.0kHz | 3 | ||
| Delay Time | td | 10 | ns | VCC = 30V, IC = 150mA, VEB(off) = 0.5V, IB1 = 15mA | 3 | ||
| Rise Time | tr | 25 | ns | VCC = 30V, IC = 150mA, VEB(off) = 0.5V, IB1 = 15mA | 3 | ||
| Storage Time | ts | 225 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 3 | ||
| Fall Time | tf | 60 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DXT2222A-13 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
dxt2222a-13-etched.step/dxt2222a-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dxt2222a-13.step/dxt2222a-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
c24ae914fd7cf85c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).