# DXT2222A-13-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-89

DXT2222A-13-HXY from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives no separate pin-specific limit, and the emitter-base breakdown voltage V(BR)EBO is 6 V minimum at IE=10 µA. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet limits are collector-base voltage VCBO 75 V, collector-emitter voltage VCEO 40 V, and continuous collector current IC 600 mA. |
| 3 | EMITTER | passive | Emitter terminal; the emitter-base voltage VEBO is rated 6 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 75 |  |  | V | IC= 10µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 |  |  | V | IC= 10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE=10µA, IC=0 | 1 |
| DC current gain | hFE(1) | 35 |  |  |  | VCE=10V, IC= 0.1mA | 1 |
| DC current gain | hFE(2) | 50 |  |  |  | VCE=10V, IC= 1mA | 1 |
| DC current gain | hFE(3) | 75 |  |  |  | VCE=10V, IC= 10mA | 1 |
| DC current gain | hFE(4) | 100 |  | 300 |  | VCE=10V, IC= 150mA | 1 |
| DC current gain | hFE(6) | 40 |  |  |  | VCE=10V, IC= 500mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 1 | V | IC=500mA, IB= 50mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.3 | V | IC=150mA, IB=15mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 2 | V | IC=500mA, IB=50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | 0.6 |  | 1.2 | V | IC=150mA, IB=15mA | 1 |
| Transition frequency | fT | 300 |  |  | MHz | VCE=10V, IC=20mA, f=100MHz | 1 |
| Output capacitance | Cob |  |  | 8 | pF | VCB=10V, IE=0, f=1MHz | 1 |
| Delay time | td |  |  | 10 | ns |  | 1 |
| Rise time | tr |  |  | 25 | ns | VCC=30V, IC=150mA, VBE(off)=0.5V, IB1=15mA | 1 |
| Storage time | ts |  |  | 225 | ns |  | 1 |
| Fall time | tf |  |  | 60 | ns | VCC=30V, IC=150mA, IB1=- IB2= 15mA | 1 |
| Collector-base voltage | VCBO |  |  | 75 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 40 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector current, continuous | IC |  |  | 600 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 0.5 | W |  | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `DXT2222A-13-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `dxt2222a-13-hxy-etched.step` / `dxt2222a-13-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dxt2222a-13-hxy.step` / `dxt2222a-13-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604449342002642944) (4 pp, sha256 `df9a256a126c0b6b`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dxt2222a-13-hxy-datasheet.pdf)