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DXT2222A-13-HXY

Public Made by Adom

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HXY MOSFET Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DXT2222A-13-HXY

HXY MOSFET · Bipolar (BJT) · SOT-89

DXT2222A-13-HXY from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet gives no separate pin-specific limit, and the emitter-base breakdown voltage V(BR)EBO is 6 V minimum at IE=10 µA.
2 COLLECTOR passive Collector terminal; the datasheet limits are collector-base voltage VCBO 75 V, collector-emitter voltage VCEO 40 V, and continuous collector current IC 600 mA.
3 EMITTER passive Emitter terminal; the emitter-base voltage VEBO is rated 6 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 75 V IC= 10µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC= 10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 1
DC current gain hFE(1) 35 VCE=10V, IC= 0.1mA 1
DC current gain hFE(2) 50 VCE=10V, IC= 1mA 1
DC current gain hFE(3) 75 VCE=10V, IC= 10mA 1
DC current gain hFE(4) 100 300 VCE=10V, IC= 150mA 1
DC current gain hFE(6) 40 VCE=10V, IC= 500mA 1
Collector-emitter saturation voltage VCE(sat) 1 V IC=500mA, IB= 50mA 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=150mA, IB=15mA 1
Base-emitter saturation voltage VBE(sat) 2 V IC=500mA, IB=50mA 1
Base-emitter saturation voltage VBE(sat) 0.6 1.2 V IC=150mA, IB=15mA 1
Transition frequency fT 300 MHz VCE=10V, IC=20mA, f=100MHz 1
Output capacitance Cob 8 pF VCB=10V, IE=0, f=1MHz 1
Delay time td 10 ns 1
Rise time tr 25 ns VCC=30V, IC=150mA, VBE(off)=0.5V, IB1=15mA 1
Storage time ts 225 ns 1
Fall time tf 60 ns VCC=30V, IC=150mA, IB1=- IB2= 15mA 1
Collector-base voltage VCBO 75 V 1
Collector-emitter voltage VCEO 40 V 1
Emitter-base voltage VEBO 6 V 1
Collector current, continuous IC 600 mA 1
Collector power dissipation PC 0.5 W 1
Operation junction and storage temperature range TJ,Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: DXT2222A-13-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dxt2222a-13-hxy-etched.step / dxt2222a-13-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dxt2222a-13-hxy.step / dxt2222a-13-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 df9a256a126c0b6b, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF