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DRV8833CRTER

Texas Instruments · Motor Driver ICs · WQFN-16-EP(3x3)

DRV8833CRTER from Texas Instruments, in a WQFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 AISEN passive Bridge A sense pin; a sense resistor to GND sets the PWM current regulation level (VTRIP 200 mV nominal), or connect directly to ground to disable current control.
2 AOUT2 output Bridge A output 2; positive current is AOUT1 to AOUT2.
3 BOUT2 output Bridge B output 2; positive current is BOUT1 to BOUT2.
4 BISEN passive Bridge B sense pin; a sense resistor to GND sets the PWM current regulation level (VTRIP 200 mV nominal), or connect directly to ground to disable current control.
5 BOUT1 output Bridge B output 1; positive current is BOUT1 to BOUT2.
6 nFAULT output Open-drain fault indication pulled logic low on a fault condition; requires an external pullup (>1 kΩ, to a supply rated <5.5 V).
7 BIN1 input H-bridge B PWM input controlling the state of BOUT1 and BOUT2; internal pulldown (150 kΩ typ).
8 BIN2 input H-bridge B PWM input controlling the state of BOUT1 and BOUT2; internal pulldown (150 kΩ typ).
9 NC unconnected No connect pin.
10 VM power_in Motor power supply, 2.7 to 10.8 V; bypass to GND with a 10-µF ceramic capacitor rated for VM.
11 GND power_in Device ground; both the GND pin and the PowerPAD must be connected to ground.
12 VINT power_out Internal 3.3 V regulator output; bypass to GND with a 2.2-µF, 6.3-V ceramic capacitor.
13 AIN2 input H-bridge A PWM input controlling the state of AOUT1 and AOUT2; internal pulldown (150 kΩ typ).
14 AIN1 input H-bridge A PWM input controlling the state of AOUT1 and AOUT2; internal pulldown (150 kΩ typ).
15 nSLEEP input Sleep mode input: logic high enables the device, logic low enters low-power sleep mode; internal 500-kΩ pulldown, clamped at 6.5 V.
16 AOUT1 output Bridge A output 1; positive current is AOUT1 to AOUT2.
17 GND power_in Exposed thermal pad (PowerPAD); must be connected to ground and soldered to the board for thermal performance.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WQFN-16-EP(3x3)
Category Power Supply Chip
Pins 17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VM operating voltage VM 2.7 10.8 V 5
VM operating supply current IVM 1.7 3 mA VM = 5 V, xINx low, nSLEEP high 5
VM sleep mode supply current IVMQ 1.6 2.7 μA VM = 5 V, nSLEEP low 5
Internal regulator voltage VINT 3 3.3 3.6 V VM = 5 V 5
Input logic low voltage xINx VIL 0 0.7 V xINx 5
Input logic low voltage nSLEEP VIL 0 0.5 V nSLEEP 5
Input logic high voltage xINx VIH 2 5.5 V xINx 5
Input logic high voltage nSLEEP VIH 2.5 5.5 V nSLEEP 5
Input logic hysteresis VHYS 350 400 650 mV 5
Input logic low current IIL -1 1 μA VIN = 0 V 5
Input logic high current IIH 50 μA VIN = 5 V 5
Pulldown resistance xINx RPD 100 150 250 kΩ xINx 5
Pulldown resistance nSLEEP RPD 380 500 750 kΩ nSLEEP 5
Output logic low voltage VOL 0.5 V IO = 5 mA 5
Output logic high leakage IOH -1 1 μA RPULLUP = 1 kΩ to 5 V 5
High-side FET on-resistance RDS(ON) 1400 1475 mΩ VM = 5 V, I = 0.2 A, TA = 85°C 5
High-side FET on-resistance RDS(ON) 1875 1975 mΩ VM = 2.7 V, I = 0.2 A, TA = 85°C 5
Low-side FET on-resistance RDS(ON) 675 705 mΩ VM = 5 V, I = 0.2 A, TA = 85°C 5
Low-side FET on-resistance RDS(ON) 775 815 mΩ VM = 2.7 V, I = 0.2 A, TA = 85°C 5
Off-state leakage current IOFF -1 1 μA VM = 5 V 6
xISEN trip voltage VTRIP 160 200 240 mV 6
Power supply (VM) VM -0.3 11.8 V 4
Internal regulator (VINT) VINT -0.3 3.8 V 4
Control pins voltage -0.3 7 V AIN1, AIN2, BIN1, BIN2, nSLEEP, nFAULT 4
Continuous phase node pins voltage -0.3 0.5 V AOUT1, AOUT2, BOUT1, BOUT2; max is VM + 0.5 V 4
Pulsed 10 µs phase node pins voltage -1 1 V AOUT1, AOUT2, BOUT1, BOUT2; max is VM + 1 V 4
Continuous shunt amplifier input pins -0.3 0.5 V AISEN, BISEN 4
Pulsed 10 µs shunt amplifier input pins -1 1 V AISEN, BISEN 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature range Tstg -65 150 °C 4
ESD HBM V(ESD) -2000 2000 V HBM, all pins 4
ESD CDM V(ESD) -1000 1000 V CDM, all pins 4
Power supply voltage range VM 2.7 10.8 V 4
Logic level input voltage VI 0 5.5 V 4
Motor RMS current IRMS 0 0.6 A RTE package 4
Applied PWM frequency ƒPWM 0 200 kHz Applied PWM signal to AIN1, AIN2, BIN1, or BIN2 4
Operating ambient temperature TA -40 85 °C 4
Junction-to-ambient thermal resistance RθJA 44.7 °C/W QFN 16 pins 5
Junction-to-case (top) thermal resistance RθJC(top) 48.5 °C/W QFN 16 pins 5
Junction-to-board thermal resistance RθJB 16.8 °C/W QFN 16 pins 5
Junction-to-top characterization parameter ψJT 0.7 °C/W QFN 16 pins 5
Junction-to-board characterization parameter ψJB 16.7 °C/W QFN 16 pins 5
Junction-to-case (bottom) thermal resistance RθJC(bot) 4.2 °C/W QFN 16 pins 5
High-side FET on-resistance RDS(ON) 1180 mΩ VM = 5 V, I = 0.2 A, TA = 25°C 5
High-side FET on-resistance RDS(ON) 1550 mΩ VM = 2.7 V, I = 0.2 A, TA = 25°C 5
Low-side FET on-resistance RDS(ON) 555 mΩ VM = 5 V, I = 0.2 A, TA = 25°C 5
Low-side FET on-resistance RDS(ON) 635 mΩ VM = 2.7 V, I = 0.2 A, TA = 25°C 5
Sleep time tSLEEP 10 µs nSLEEP low to sleep mode 5
Wake-up time tWAKE 155 μs nSLEEP high to output transition 5
Turn-on time tON 25 μs VM > VUVLO to output transition 5
VM undervoltage lockout falling VUVLO 2.6 V VM falling; UVLO report 6
VM undervoltage lockout rising VUVLO 2.7 V VM rising; UVLO recovery 6
Overcurrent protection trip level IOCP 1 A 6
Thermal shutdown temperature TTSD 150 °C Die temperature, TJ 6

CAD (KiCad official)

  • Symbol: DRV8833CRTER
  • Footprint: Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm
  • 3D model: WQFN-16-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: drv8833crter-etched.step / drv8833crter-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); drv8833crter.step / drv8833crter.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 6283eae3c9c8f282, retrieved 2026-10-31, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF