DRV8833CRTER from Texas Instruments, in a WQFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	AISEN	passive	Bridge A sense pin; a sense resistor to GND sets the PWM current regulation level (VTRIP 200 mV nominal), or connect directly to ground to disable current control.
2	AOUT2	output	Bridge A output 2; positive current is AOUT1 to AOUT2.
3	BOUT2	output	Bridge B output 2; positive current is BOUT1 to BOUT2.
4	BISEN	passive	Bridge B sense pin; a sense resistor to GND sets the PWM current regulation level (VTRIP 200 mV nominal), or connect directly to ground to disable current control.
5	BOUT1	output	Bridge B output 1; positive current is BOUT1 to BOUT2.
6	nFAULT	output	Open-drain fault indication pulled logic low on a fault condition; requires an external pullup (>1 kΩ, to a supply rated <5.5 V).
7	BIN1	input	H-bridge B PWM input controlling the state of BOUT1 and BOUT2; internal pulldown (150 kΩ typ).
8	BIN2	input	H-bridge B PWM input controlling the state of BOUT1 and BOUT2; internal pulldown (150 kΩ typ).
9	NC	unconnected	No connect pin.
10	VM	power_in	Motor power supply, 2.7 to 10.8 V; bypass to GND with a 10-µF ceramic capacitor rated for VM.
11	GND	power_in	Device ground; both the GND pin and the PowerPAD must be connected to ground.
12	VINT	power_out	Internal 3.3 V regulator output; bypass to GND with a 2.2-µF, 6.3-V ceramic capacitor.
13	AIN2	input	H-bridge A PWM input controlling the state of AOUT1 and AOUT2; internal pulldown (150 kΩ typ).
14	AIN1	input	H-bridge A PWM input controlling the state of AOUT1 and AOUT2; internal pulldown (150 kΩ typ).
15	nSLEEP	input	Sleep mode input: logic high enables the device, logic low enters low-power sleep mode; internal 500-kΩ pulldown, clamped at 6.5 V.
16	AOUT1	output	Bridge A output 1; positive current is AOUT1 to AOUT2.
17	GND	power_in	Exposed thermal pad (PowerPAD); must be connected to ground and soldered to the board for thermal performance.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	WQFN-16-EP(3x3)
Category	Power Supply Chip
Pins	17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
VM operating voltage	VM	2.7		10.8	V		5
VM operating supply current	IVM		1.7	3	mA	VM = 5 V, xINx low, nSLEEP high	5
VM sleep mode supply current	IVMQ		1.6	2.7	μA	VM = 5 V, nSLEEP low	5
Internal regulator voltage	VINT	3	3.3	3.6	V	VM = 5 V	5
Input logic low voltage xINx	VIL	0		0.7	V	xINx	5
Input logic low voltage nSLEEP	VIL	0		0.5	V	nSLEEP	5
Input logic high voltage xINx	VIH	2		5.5	V	xINx	5
Input logic high voltage nSLEEP	VIH	2.5		5.5	V	nSLEEP	5
Input logic hysteresis	VHYS	350	400	650	mV		5
Input logic low current	IIL	-1		1	μA	VIN = 0 V	5
Input logic high current	IIH			50	μA	VIN = 5 V	5
Pulldown resistance xINx	RPD	100	150	250	kΩ	xINx	5
Pulldown resistance nSLEEP	RPD	380	500	750	kΩ	nSLEEP	5
Output logic low voltage	VOL			0.5	V	IO = 5 mA	5
Output logic high leakage	IOH	-1		1	μA	RPULLUP = 1 kΩ to 5 V	5
High-side FET on-resistance	RDS(ON)		1400	1475	mΩ	VM = 5 V, I = 0.2 A, TA = 85°C	5
High-side FET on-resistance	RDS(ON)		1875	1975	mΩ	VM = 2.7 V, I = 0.2 A, TA = 85°C	5
Low-side FET on-resistance	RDS(ON)		675	705	mΩ	VM = 5 V, I = 0.2 A, TA = 85°C	5
Low-side FET on-resistance	RDS(ON)		775	815	mΩ	VM = 2.7 V, I = 0.2 A, TA = 85°C	5
Off-state leakage current	IOFF	-1		1	μA	VM = 5 V	6
xISEN trip voltage	VTRIP	160	200	240	mV		6
Power supply (VM)	VM	-0.3		11.8	V		4
Internal regulator (VINT)	VINT	-0.3		3.8	V		4
Control pins voltage		-0.3		7	V	AIN1, AIN2, BIN1, BIN2, nSLEEP, nFAULT	4
Continuous phase node pins voltage		-0.3		0.5	V	AOUT1, AOUT2, BOUT1, BOUT2; max is VM + 0.5 V	4
Pulsed 10 µs phase node pins voltage		-1		1	V	AOUT1, AOUT2, BOUT1, BOUT2; max is VM + 1 V	4
Continuous shunt amplifier input pins		-0.3		0.5	V	AISEN, BISEN	4
Pulsed 10 µs shunt amplifier input pins		-1		1	V	AISEN, BISEN	4
Operating junction temperature	TJ	-40		150	°C		4
Storage temperature range	Tstg	-65		150	°C		4
ESD HBM	V(ESD)	-2000		2000	V	HBM, all pins	4
ESD CDM	V(ESD)	-1000		1000	V	CDM, all pins	4
Power supply voltage range	VM	2.7		10.8	V		4
Logic level input voltage	VI	0		5.5	V		4
Motor RMS current	IRMS	0		0.6	A	RTE package	4
Applied PWM frequency	ƒPWM	0		200	kHz	Applied PWM signal to AIN1, AIN2, BIN1, or BIN2	4
Operating ambient temperature	TA	-40		85	°C		4
Junction-to-ambient thermal resistance	RθJA		44.7		°C/W	QFN 16 pins	5
Junction-to-case (top) thermal resistance	RθJC(top)		48.5		°C/W	QFN 16 pins	5
Junction-to-board thermal resistance	RθJB		16.8		°C/W	QFN 16 pins	5
Junction-to-top characterization parameter	ψJT		0.7		°C/W	QFN 16 pins	5
Junction-to-board characterization parameter	ψJB		16.7		°C/W	QFN 16 pins	5
Junction-to-case (bottom) thermal resistance	RθJC(bot)		4.2		°C/W	QFN 16 pins	5
High-side FET on-resistance	RDS(ON)		1180		mΩ	VM = 5 V, I = 0.2 A, TA = 25°C	5
High-side FET on-resistance	RDS(ON)		1550		mΩ	VM = 2.7 V, I = 0.2 A, TA = 25°C	5
Low-side FET on-resistance	RDS(ON)		555		mΩ	VM = 5 V, I = 0.2 A, TA = 25°C	5
Low-side FET on-resistance	RDS(ON)		635		mΩ	VM = 2.7 V, I = 0.2 A, TA = 25°C	5
Sleep time	tSLEEP			10	µs	nSLEEP low to sleep mode	5
Wake-up time	tWAKE			155	μs	nSLEEP high to output transition	5
Turn-on time	tON			25	μs	VM > VUVLO to output transition	5
VM undervoltage lockout falling	VUVLO		2.6		V	VM falling; UVLO report	6
VM undervoltage lockout rising	VUVLO		2.7		V	VM rising; UVLO recovery	6
Overcurrent protection trip level	IOCP	1			A		6
Thermal shutdown temperature	TTSD	150			°C	Die temperature, TJ	6

CAD (KiCad official)

Symbol: DRV8833CRTER
Footprint: Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm
3D model: WQFN-16-EP(3x3) (KiCad packages3D, STEP)
3D model files: drv8833crter-etched.step / drv8833crter-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); drv8833crter.step / drv8833crter.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (30 pp, sha256 6283eae3c9c8f282, retrieved 2026-10-31, tier: manufacturer)
Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

DRV8833CRTER

Verified DRV8833CRTER

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README