component
DRV8802QPWPRQ1
Public Made by Adomby adom
Texas Instruments Motor Driver ICs, HTSSOP-28-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDRV8802QPWPRQ1
Texas Instruments · Motor Driver ICs · HTSSOP-28-EP
DRV8802QPWPRQ1 from Texas Instruments, in a HTSSOP-28-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CP1 | bidirectional | Charge pump flying capacitor; connect a 0.01-µF 50-V capacitor between CP1 and CP2. |
| 2 | CP2 | bidirectional | Charge pump flying capacitor; connect a 0.01-µF 50-V capacitor between CP1 and CP2. |
| 3 | VCP | bidirectional | High-side gate drive voltage; connect a 0.1-µF 16-V ceramic capacitor and a 1-MΩ resistor to VMx. |
| 4 | VMA | power_in | Bridge A power supply; connect to the motor supply (8 to 45 V), and both VMx pins must be connected to the same supply. |
| 5 | AOUT1 | output | Bridge A output 1; connect to motor winding A. |
| 6 | ISENA | bidirectional | Bridge A ground and current sense; connect to the current sense resistor for bridge A (sense pin voltage limit −0.3 V to 0.8 V). |
| 7 | AOUT2 | output | Bridge A output 2; connect to motor winding A. |
| 8 | BOUT2 | output | Bridge B output 2; connect to motor winding B. |
| 9 | ISENB | bidirectional | Bridge B ground and current sense; connect to the current sense resistor for bridge B (sense pin voltage limit −0.3 V to 0.8 V). |
| 10 | BOUT1 | output | Bridge B output 1; connect to motor winding B. |
| 11 | VMB | power_in | Bridge B power supply; connect to the motor supply (8 to 45 V), and both VMx pins must be connected to the same supply. |
| 12 | AVREF | input | Bridge A current set reference input; the reference voltage sets winding current and can be driven by an external DAC for microstepping or tied to V3P3OUT (VREF input 1 to 3.5 V). |
| 13 | BVREF | input | Bridge B current set reference input; the reference voltage sets winding current and can be driven by an external DAC for microstepping or tied to V3P3OUT (VREF input 1 to 3.5 V). |
| 14 | GND | power_in | Device ground. |
| 15 | V3P3OUT | power_out | 3.3-V regulator output; bypass to GND with a 0.47-µF 6.3-V ceramic capacitor; can be used to supply VREF (load current 1 mA max). |
| 16 | nRESET | input | Active-low reset input that initializes internal logic and disables the H-bridge outputs; all inputs are ignored while active. |
| 17 | nSLEEP | input | Sleep mode input; logic high enables the device and logic low puts it into low-power sleep mode. |
| 18 | nFAULT | output | Open-drain fault output that is logic low when in a fault condition (overtemperature, overcurrent); output low voltage 0.5 V max at 5 mA. |
| 19 | DECAY | input | Decay mode select; logic low selects slow decay (brake) and logic high selects fast decay (coast) for both H-bridges. |
| 20 | APHASE | input | Bridge A phase (direction) input; logic high sets AOUT1 high and AOUT2 low. |
| 21 | AENBL | input | Bridge A enable input; logic high enables bridge A. |
| 22 | BENBL | input | Bridge B enable input; logic high enables bridge B. |
| 23 | BPHASE | input | Bridge B phase (direction) input; logic high sets BOUT1 high and BOUT2 low. |
| 24 | AI0 | input | Bridge A current set bit 0; with AI1 sets bridge A current to 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0%. |
| 25 | AI1 | input | Bridge A current set bit 1; with AI0 sets bridge A current to 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0%. |
| 26 | BI0 | input | Bridge B current set bit 0; with BI1 sets bridge B current to 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0%. |
| 27 | BI1 | input | Bridge B current set bit 1; with BI0 sets bridge B current to 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0%. |
| 28 | GND | power_in | Device ground. |
| 29 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | HTSSOP-28-EP |
| Category | Power Supply Chip |
| Pins | 29 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Power supply voltage | V(VMx) | -0.3 | 47 | V | 5 | ||
| Charge pump voltage | VCP, CP1, CP2 | -0.3 | V | 5 | |||
| Digital pin voltage | -0.5 | 7 | V | xPHASE, xENBL, nSLEEP, nFAULT, nRESET, xI0, xI1, DECAY | 5 | ||
| Reference input voltage | V(xVREF) | -0.3 | 4 | V | 5 | ||
| Sense pin voltage | V(ISENx) | -0.3 | 0.8 | V | 5 | ||
| H-bridge output continuous current | 1.6 | A | Continuous motor drive; power dissipation and thermal limits must be observed | 5 | |||
| Operating virtual junction temperature | TJ | -40 | 150 | °C | 5 | ||
| Operating ambient temperature | TA | -40 | 125 | °C | 5 | ||
| Storage temperature range | Tstg | -60 | 150 | °C | 5 | ||
| Electrostatic discharge, human body model | V(ESD) | -2000 | 2000 | V | Human body model (HBM), per AEC Q100-002 | 5 | |
| Electrostatic discharge, charged device model, corner pins | V(ESD) | -750 | 750 | V | Charged device model (CDM), per AEC Q100-011; corner pins (1, 14, 15, and 28) | 5 | |
| Electrostatic discharge, charged device model, other pins | V(ESD) | -500 | 500 | V | Charged device model (CDM), per AEC Q100-011; other pins | 5 | |
| Power supply voltage | V(VMx) | 8.2 | 45 | V | 5 | ||
| VREF input voltage | V(xVREF) | 1 | 3.5 | V | 5 | ||
| H-bridge output current | I(OUT1x, OUT2x) | 1.6 | A | 5 | |||
| V3P3OUT load current | IL(V3P3OUT) | 1 | mA | 5 | |||
| VMx operating supply current | I(VMx) | 5 | 8 | mA | V(VMx) = 24 V, ƒ(PWM) < 50 kHz | 6 | |
| VMx sleep mode supply current | I(VMx_Q) | 10 | 20 | μA | V(VMx) = 24 V | 6 | |
| VMx undervoltage lockout voltage | V(UVLO) | 7.8 | 8.2 | V | V(VMx) rising | 6 | |
| V3P3OUT voltage | V(V3P3OUT) | 3.1 | 3.3 | 3.5 | V | IO = 0 to 1 mA | 6 |
| Input low voltage | VIL | 0.7 | V | 6 | |||
| Input high voltage | VIH | 2.1 | V | 6 | |||
| Input hysteresis | Vhys | 0.45 | V | 6 | |||
| Input low current | IIL | -20 | 20 | μA | VI = 0 | 6 | |
| Input high current | IIH | 100 | μA | VI = 3.3 V | 6 | ||
| nFAULT output low voltage | VOL | 0.5 | V | IO = 5 mA | 6 | ||
| Output high leakage current | IOH | 1 | μA | VO = 3.3 V | 6 | ||
| DECAY input low threshold voltage | VIL | 0 | 0.8 | V | For slow decay mode | 6 | |
| DECAY input high threshold voltage | VIH | 2 | V | For fast decay mode | 6 | ||
| DECAY input current | II | -40 | 40 | µA | 6 | ||
| HS FET on resistance | rDS(on) | 0.63 | Ω | VM = 24 V, IO = 1 A, TJ = 25°C | 6 | ||
| HS FET on resistance | rDS(on) | 0.76 | 0.9 | Ω | VM = 24 V, IO = 1 A, TJ = 85°C | 6 | |
| HS FET on resistance | rDS(on) | 0.85 | 1 | Ω | VM = 24 V, IO = 1 A, TJ = 125°C | 6 | |
| LS FET on resistance | rDS(on) | 0.65 | Ω | VM = 24 V, IO = 1 A, TJ = 25°C | 6 | ||
| LS FET on resistance | rDS(on) | 0.78 | 0.9 | Ω | VM = 24 V, IO = 1 A, TJ = 85°C | 6 | |
| LS FET on resistance | rDS(on) | 0.85 | 1 | Ω | VM = 24 V, IO = 1 A, TJ = 125°C | 6 | |
| Off-state leakage current | Ilkg(OFF) | -20 | 20 | μA | 6 | ||
| Internal PWM frequency | ƒ(PWM) | 50 | kHz | 6 | |||
| Current-sense blanking time | t(blank) | 3.75 | μs | 6 | |||
| Rise time | tr | 100 | 360 | ns | VM = 24 V | 6 | |
| Fall time | tf | 80 | 250 | ns | VM = 24 V | 6 | |
| Dead time | t(dead) | 400 | ns | 6 | |||
| Overcurrent protection trip level | I(OCP) | 1.8 | 5 | A | 6 | ||
| Thermal shutdown temperature | T(SD) | 150 | 160 | 180 | °C | Die temperature | 6 |
| xVREF input current | I(xVREF) | -3 | 3 | μA | V(xVREF) = 3.3 V | 6 | |
| xISENSE trip voltage, 100% current setting | V(TRIP) | 635 | 660 | 685 | mV | V(xVREF) = 3.3 V, 100% current setting | 6 |
| xISENSE trip voltage, 71% current setting | V(TRIP) | 445 | 469 | 492 | mV | V(xVREF) = 3.3 V, 71% current setting | 6 |
| xISENSE trip voltage, 38% current setting | V(TRIP) | 225 | 251 | 276 | mV | V(xVREF) = 3.3 V, 38% current setting | 6 |
| Current sense amplifier gain | G(ISENx) | 5 | V/V | Reference only | 6 | ||
| Junction-to-ambient thermal resistance | RθJA | 38.9 | °C/W | PWP package, 28 pins | 5 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 23.3 | °C/W | PWP package, 28 pins | 5 | ||
| Junction-to-board thermal resistance | RθJB | 21.2 | °C/W | PWP package, 28 pins | 5 | ||
| Junction-to-top characterization parameter | ψJT | 0.8 | °C/W | PWP package, 28 pins | 5 | ||
| Junction-to-board characterization parameter | ψJB | 20.9 | °C/W | PWP package, 28 pins | 5 | ||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 2.6 | °C/W | PWP package, 28 pins | 5 |
CAD (KiCad official)
- Symbol:
DRV8802QPWPRQ1 - Footprint:
Package_SO:TSSOP-28-1EP_4.4x9.7mm_P0.65mm_EP2.85x6.7mm - 3D model: HTSSOP-28-EP (KiCad packages3D, STEP)
- 3D model files:
drv8802qpwprq1-etched.step/drv8802qpwprq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);drv8802qpwprq1.step/drv8802qpwprq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (27 pp, sha256
8ef179cf20753a85, retrieved 2026-10-30, tier: manufacturer) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).