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DRV8320RHRHAT

Texas Instruments · Motor Driver ICs · VQFN-40-EP(6x6)

DRV8320RHRHAT from Texas Instruments, in a VQFN-40-EP(6x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PGND power_in Device power ground; connect to system ground.
2 CPL passive Charge pump switching node; connect a X5R or X7R, 47-nF, VM-rated ceramic capacitor between CPH and CPL.
3 CPH passive Charge pump switching node; connect a X5R or X7R, 47-nF, VM-rated ceramic capacitor between CPH and CPL.
4 VCP power_out Charge pump output; connect a X5R or X7R, 1-µF, 16-V ceramic capacitor between VCP and VM.
5 VM power_in Gate driver power supply input; connect to the bridge power supply with a 0.1-µF VM-rated ceramic capacitor and at least 10-µF local capacitance to PGND.
6 VDRAIN input High-side MOSFET drain sense input; connect to the common point of the MOSFET drains.
7 GHA output High-side gate driver output; connect to the gate of the high-side power MOSFET.
8 SHA input High-side source sense input; connect to the high-side power MOSFET source.
9 GLA output Low-side gate driver output; connect to the gate of the low-side power MOSFET.
10 SLA input Low-side source sense input; connect to the low-side power MOSFET source.
11 SLB input Low-side source sense input; connect to the low-side power MOSFET source.
12 GLB output Low-side gate driver output; connect to the gate of the low-side power MOSFET.
13 SHB input High-side source sense input; connect to the high-side power MOSFET source.
14 GHB output High-side gate driver output; connect to the gate of the high-side power MOSFET.
15 GHC output High-side gate driver output; connect to the gate of the high-side power MOSFET.
16 SHC input High-side source sense input; connect to the high-side power MOSFET source.
17 GLC output Low-side gate driver output; connect to the gate of the low-side power MOSFET.
18 SLC input Low-side source sense input; connect to the low-side power MOSFET source.
19 GND power_in Device ground; connect to system ground.
20 nFAULT output Open-drain fault indicator, pulled logic low during a fault condition and requires an external pullup resistor.
21 MODE input PWM input mode setting; 4-level input set by an external resistor.
22 IDRIVE input Gate drive output current setting; 7-level input set by an external resistor.
23 VDS input VDS monitor trip point setting; 7-level input set by an external resistor.
24 NC unconnected No internal connection; can be left floating or connected to system ground.
25 ENABLE input Gate driver enable; logic low puts the device in low-power sleep mode, and an 8 to 40-µs low pulse resets fault conditions.
26 AGND power_in Device analog ground; connect to system ground.
27 DVDD power_out 3.3-V internal regulator output that can source up to 30 mA externally; connect a X5R or X7R, 1-µF, 6.3-V ceramic capacitor between DVDD and AGND.
28 INHA input High-side gate driver control input; controls the output of the high-side gate driver.
29 INLA input Low-side gate driver control input; controls the output of the low-side gate driver.
30 INHB input High-side gate driver control input; controls the output of the high-side gate driver.
31 INLB input Low-side gate driver control input; controls the output of the low-side gate driver.
32 INHC input High-side gate driver control input; controls the output of the high-side gate driver.
33 INLC input Low-side gate driver control input; controls the output of the low-side gate driver.
34 BGND power_in Buck regulator ground; connect to system ground.
35 CB passive Buck regulator bootstrap input; connect a X5R or X7R, 0.1-µF, 16-V capacitor between CB and SW.
36 SW output Buck switch node; connect to an inductor, diode, and the CB bootstrap capacitor.
37 NC unconnected No internal connection; can be left floating or connected to system ground.
38 VIN power_in Buck regulator power supply input; place an X5R or X7R, VM-rated ceramic capacitor between VIN and BGND.
39 nSHDN input Buck shutdown input (high voltage tolerant) with internal pullup current source; pull lower than 1.25 V to disable, float to enable.
40 FB input Buck feedback input; a resistor divider from the buck post-inductor output to this pin sets the buck output voltage.
41 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VQFN-40-EP(6x6)
Category Power Management ICs
Pins 41

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power supply voltage (VM) VVM 6 60 V 12
Buck power supply voltage (VIN) VVIN 4 60 V 12
Operating ambient temperature TA -40 125 °C 12
Logic input voltage VI 0 5.5 V ENABLE, IDRIVE, INHx, INLx, MODE, VDS 12
Applied PWM signal fPWM 0 200 kHz INHx, INLx 12
High-side average gate drive current IGATE_HS 0 25 mA GHx 12
Low-side average gate drive current IGATE_LS 0 25 mA GLx 12
External load current (DVDD) IDVDD 0 30 mA 12
Open drain pullup voltage VOD 0 5.5 V nFAULT 12
Open drain output current IOD 0 5 mA nFAULT 12
Shutdown control input voltage VnSHDN 0 60 V nSHDN 12
Power supply pin voltage (VM) VM -0.3 65 V 11
MOSFET drain sense pin voltage VDRAIN -0.3 65 V 11
Charge pump pin voltage (CPH, VCP) -0.3 V max VVM + 13.5 V 11
DVDD pin voltage -0.3 3.8 V 11
Digital pin voltage -0.3 5.75 V ENABLE, IDRIVE, INHx, INLx, MODE, nFAULT, VDS 11
Buck power supply pin voltage (VIN) VIN -0.3 65 V 11
Buck feedback pin voltage (FB) FB -0.3 7 V 11
Bootstrap pin voltage wrt SW (CB) CB -0.3 7 V 11
Operating junction temperature TJ -40 150 °C 11
Storage temperature Tstg -65 150 °C 11
ESD HBM V(ESD) -3000 3000 V Human-body model, ANSI/ESDA/JEDEC JS-001 11
ESD CDM V(ESD) -1000 1000 V Charged-device model, JESD22-C101 11
Junction-to-ambient thermal resistance RθJA 30.1 °C/W RHA (VQFN) 40 pins 12
Junction-to-case (top) thermal resistance RθJC(top) 16.7 °C/W RHA (VQFN) 40 pins 12
Junction-to-board thermal resistance RθJB 9.9 °C/W RHA (VQFN) 40 pins 12
Junction-to-top characterization parameter ψJT 0.5 °C/W RHA (VQFN) 40 pins 12
Junction-to-board characterization parameter ψJB 9.9 °C/W RHA (VQFN) 40 pins 12
Junction-to-case (bottom) thermal resistance RθJC(bot) 2.2 °C/W RHA (VQFN) 40 pins 12
VM operating supply current IVM 10.5 14 mA VVM = 24 V, ENABLE = 3.3 V, INHx/INLx = 0 V 13
VM sleep mode supply current (25°C) IVMQ 12 20 µA ENABLE = 0 V, VVM = 24 V, TA = 25°C 13
VM sleep mode supply current (125°C) IVMQ 50 µA ENABLE = 0 V, VVM = 24 V, TA = 125°C 13
Reset pulse time tRST 8 40 µs ENABLE = 0 V period to reset faults 13
Turnon time tWAKE 1 ms VVM > VUVLO, ENABLE = 3.3 V to outputs ready 13
Turnoff time tSLEEP 1 ms ENABLE = 0 V to device sleep mode 13
DVDD regulator voltage VDVDD 3 3.3 3.6 V IDVDD = 0 to 30 mA 13
VCP operating voltage wrt VM (13 V) VVCP 8.4 11 12.5 V VVM = 13 V, IVCP = 0 to 25 mA 13
VCP operating voltage wrt VM (10 V) VVCP 6.3 9 10 V VVM = 10 V, IVCP = 0 to 20 mA 13
VCP operating voltage wrt VM (8 V) VVCP 5.4 7 8 V VVM = 8 V, IVCP = 0 to 15 mA 13
VCP operating voltage wrt VM (6 V) VVCP 4 5 6 V VVM = 6 V, IVCP = 0 to 10 mA 13
Input logic low voltage VIL 0 0.8 V 13
Input logic high voltage VIH 1.5 5.5 V 13
Input logic low current IIL -5 5 µA VVIN = 0 V 13
Input logic high current IIH 70 µA VVIN = 5 V 13
Propagation delay tPD 150 ns INHx/INLx transition to GHx/GLx transition 13
Output logic low voltage VOL 0.1 V IO = 5 mA 13
Output high impedance leakage IOZ -2 2 µA VO = 5 V 13
High-side gate drive voltage (13 V) VGSH 8.4 11 12.5 V VVM = 13 V, IVCP = 0 to 25 mA 14
Low-side gate drive voltage (12 V) VGSL 9 11 12 V VVM = 12 V, IVGLS = 0 to 25 mA 14
Low-side gate drive voltage (6 V) VGSL 4 5 6 V VVM = 6 V, IVGLS = 0 to 10 mA 14
VM undervoltage lockout falling VUVLO 5.4 5.6 5.8 V VM falling, UVLO report 16
VM undervoltage lockout rising VUVLO 5.6 5.8 6 V VM rising, UVLO recovery 16
High-side gate clamp positive VGS_CLAMP 15 16.5 18 V Positive clamping voltage 16
Thermal warning temperature TOTW 130 150 165 °C Die temperature, TJ 17
Thermal shutdown temperature TOTSD 150 170 185 °C Die temperature, TJ 17
Buck shutdown supply current InSHDN 1 3 µA VnSHDN = 0 V 17
Rising nSHDN threshold VnSHDN_TH 1.05 1.25 1.38 V 17
Buck feedback voltage VFB 0.747 0.765 0.782 V 17
Buck switching frequency fSW 595 700 805 kHz 17

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper noise into the feedback pin. • Place the input bypass capacitor close to the VIN pin to decrease copper trace resistance which effects the 71

CAD (KiCad official)

  • Symbol: DRV8320RHRHAT
  • Footprint: Package_DFN_QFN:QFN-40-1EP_6x6mm_P0.5mm_EP4.6x4.6mm
  • 3D model: VQFN-40-EP(6x6) (KiCad packages3D, STEP)
  • 3D model files: drv8320rhrhat-etched.step / drv8320rhrhat-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); drv8320rhrhat.step / drv8320rhrhat.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (95 pp, sha256 70d0198c22d027f4, retrieved 2026-10-31, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF